Abstract: Provided is a method of fabricating, with satisfactory adhesion, a thin film of a metal or a metallic-compound, such as a metal oxide or nitride, on a substrate made of a high-melting-point material such as silicon or ceramics by using a metal or metallic-compound target as the primary raw material so as to eliminate the necessity of using harmful gases such as organometallic gas, and by using an atmospheric-pressure plasma generated under atmospheric pressure as a reaction field and also as a heat source. Additionally provided is an apparatus for fabricating the thin film.

Abstract: Provided are a method and a device for producing nanoparticles of a low melting point material such as gold at more than 10 times faster the rate of conventional technology while maintaining the time-averaged temperature of pulse-modulated atmospheric-pressure plasma at a temperature that is low enough so as not to damage a heat-sensitive material disposed downstream. This method of preparing nanoparticles of a low melting point inorganic material in which a wire made of a low melting point inorganic material is inserted into a plasma-generating capillary tube or a plasma-generating nozzle and atmospheric-pressure high frequency plasma is generated in the capillary tube or nozzle is characterized by generating the plasma by applying a high frequency voltage possessing a waveform which exhibits its maximum value when it rises and then immediately falls, and which is pulse-modulated so that the duty ratio thereof is 10% or less.

Abstract: Provided is a method of fabricating, with satisfactory adhesion, a thin film of a metal or a metallic-compound, such as a metal oxide or nitride, on a substrate made of a high-melting-point material such as silicon or ceramics by using a metal or metallic-compound target as the primary raw material so as to eliminate the necessity of using harmful gases such as organometallic gas, and by using an atmospheric-pressure plasma generated under atmospheric pressure as a reaction field and also as a heat source. Additionally provided is an apparatus for fabricating the thin film.

Abstract: Provided are a method and a device for producing nanoparticles of a low melting point material such as gold at more than 10 times faster the rate of conventional technology while maintaining the time-averaged temperature of pulse-modulated atmospheric-pressure plasma at a temperature that is low enough so as not to damage a heat-sensitive material disposed downstream. This method of preparing nanoparticles of a low melting point inorganic material in which a wire made of a low melting point inorganic material is inserted into a plasma-generating capillary tube or a plasma-generating nozzle and atmospheric-pressure high frequency plasma is generated in the capillary tube or nozzle is characterized by generating the plasma by applying a high frequency voltage possessing a waveform which exhibits its maximum value when it rises and then immediately falls, and which is pulse-modulated so that the duty ratio thereof is 10% or less.

Abstract: The substrate electrode plasma generating apparatus is constituted of an array of small gap thin film electrode pairs 1, 2, 3, and 4 formed by sputtering and dry etching tungsten on a silicon substrate 5 with an oxidized surface.