Abstract: A method for manufacturing a printed circuit board assembled panel by a simple process with an excellent material yield and a high conforming product rate. Unit printed circuit boards previously manufactured are arranged in a frame in a prescribed relationship. Then, the printed circuit boards are fixed to one another, and the printed circuit board and the frame body are fixed to one another.

Abstract: A rigid-flexible board and a method for manufacturing the same can be provided, whereby the material yield ratio can be enhanced and the productive yield can be also enhanced. A rigid board with a step for connection and a flexible board with a connector at the edge thereof are formed independently. Then, the connecting area is spot facing processed so that the depth of the thus obtained depressed portion is equal to or lower than the thickness of the flexible board. The connector of the flexible board is electrically connected to the vertical wiring area of the depressed portion.

Abstract: To provide a sewing thread that is excellent in high-speed sewability and automatic sewing characteristics. A sewing thread includes a plurality of under-twisted yarns provided with upper-twist, the yarns each being composed of a sheath-core structure yarn composed of two or more multifilament yarns, wherein part of the sheath-core structure yarn protrudes as loops on a yarn surface, the loops being composed of 50 to 300 loops/m with 0.7 to less than 1.2 mm length and 10 or less loops/m with 1.2 mm or more length, and wherein the yarns have a strength of 4 to 6 CN/dtex.

Abstract: A semiconductor device includes: a lower hydrogen-barrier film; a capacitor formed on the lower hydrogen-barrier film and including a lower electrode, a capacitive insulating film, and an upper electrode; an interlayer dielectric film formed so as to cover the periphery of the capacitor; and an upper hydrogen-barrier film covering the top and lateral portions of the capacitor. An opening, which exposes the lower hydrogen-barrier film where the lower hydrogen-barrier film is located around the capacitor, and which is tapered and flares upward, is formed in the interlayer dielectric film, and the upper hydrogen-barrier film is formed along the lateral and bottom faces of the opening, and is in contact with the lower hydrogen-barrier film in the opening.

Abstract: A method for manufacturing a printed circuit board assembled panel by a simple process with an excellent material yield and a high conforming product rate. Unit printed circuit boards previously manufactured are arranged in a frame in a prescribed relationship. Then, the printed circuit boards are fixed to one another, and the printed circuit board and the frame body are fixed to one another.

Abstract: A semiconductor device includes: a lower hydrogen-barrier film; a capacitor formed on the lower hydrogen-barrier film and including a lower electrode, a capacitive insulating film, and an upper electrode; an interlayer dielectric film formed so as to cover the periphery of the capacitor; and an upper hydrogen-barrier film covering the top and lateral portions of the capacitor. An opening, which exposes the lower hydrogen-barrier film where the lower hydrogen-barrier film is located around the capacitor, and which is tapered and flares upward, is formed in the interlayer dielectric film, and the upper hydrogen-barrier film is formed along the lateral and bottom faces of the opening, and is in contact with the lower hydrogen-barrier film in the opening.

Abstract: A rigid-flexible board and a method for manufacturing the same can be provided, whereby the material yield ratio can be enhanced and the productive yield can be also enhanced. A rigid board with a step for connection and a flexible board with a connector at the edge thereof are formed independently. Then, the connecting area is spot facing processed so that the depth of the thus obtained depressed portion is equal to or lower than the thickness of the flexible board. The connector of the flexible board is electrically connected to the vertical wiring area of the depressed portion.

Abstract: A semiconductor device includes: a lower hydrogen-barrier film; a capacitor formed on the lower hydrogen-barrier film and including a lower electrode, a capacitive insulating film, and an upper electrode; an interlayer dielectric film formed so as to cover the periphery of the capacitor; and an upper hydrogen-barrier film covering the top and lateral portions of the capacitor. An opening, which exposes the lower hydrogen-barrier film where the lower hydrogen-barrier film is located around the capacitor, and which is tapered and flares upward, is formed in the interlayer dielectric film, and the upper hydrogen-barrier film is formed along the lateral and bottom faces of the opening, and is in contact with the lower hydrogen-barrier film in the opening.

Abstract: When an electronic device having an element including an insulating metal oxide film is manufactured, either dry cleaning or a cleaning solution containing substantially no water is used in a cleaning step conducted after a step of forming the insulating metal oxide film.

Abstract: A semiconductor device includes: a lower hydrogen-barrier film; a capacitor formed on the lower hydrogen-barrier film and including a lower electrode, a capacitive insulating film, and an upper electrode; an interlayer dielectric film formed so as to cover the periphery of the capacitor; and an upper hydrogen-barrier film covering the top and lateral portions of the capacitor. An opening, which exposes the lower hydrogen-barrier film where the lower hydrogen-barrier film is located around the capacitor, and which is tapered and flares upward, is formed in the interlayer dielectric film, and the upper hydrogen-barrier film is formed along the lateral and bottom faces of the opening, and is in contact with the lower hydrogen-barrier film in the opening.

Abstract: To provide a sewing thread that is excellent in high-speed sewability and automatic sewing characteristics. A sewing thread includes a plurality of under-twisted yarns provided with upper-twist, the yarns each being composed of a sheath-core structure yarn composed of two or more multifilament yarns, wherein part of the sheath-core structure yarn protrudes as loops on a yarn surface, the loops being composed of 50 to 300 loops/m with 0.7 to less than 1.2 mm length and 10 or less loops/m with 1.2 mm or more length, and wherein the yarns have a strength of 4 to 6 CN/dtex.

Abstract: A semiconductor device includes: a lower hydrogen-barrier film; a capacitor formed on the lower hydrogen-barrier film and including a lower electrode, a capacitive insulating film, and an upper electrode; an interlayer dielectric film formed so as to cover the periphery of the capacitor; and an upper hydrogen-barrier film covering the top and lateral portions of the capacitor. An opening, which exposes the lower hydrogen-barrier film where the lower hydrogen-barrier film is located around the capacitor, and which is tapered and flares upward, is formed in the interlayer dielectric film, and the upper hydrogen-barrier film is formed along the lateral and bottom faces of the opening, and is in contact with the lower hydrogen-barrier film in the opening.

Abstract: A wireless suspension blank is made using a two-layer laminate composed of a metallic layer with the spring property and an electrically insulating layer. The first method includes a first step for working the metallic layer by the photo etching method, a second step for forming a wiring part on the insulating layer by the semi-additive method and a third step for working the insulating layer by the wet-etching method. The second method includes a first step for working the metallic layer by the photo etching method, a second step for forming a wiring part on the insulating layer by the semi-additive method and a third step for working the insulating layer by the plasma etching method. The third method includes a first step for forming a wiring part on the metallic layer by the semi-additive method, a second step for working the metallic layer by the wet-etching method and a third step for working the insulating layer by the dry-etching method or the wet-etching method.

Abstract: A method of manufacturing a wireless suspension blank wherein three-layered laminate formed of a metallic layer having a spring property and a conductive layer laminated on the metallic layer through an electrically insulating layer are used. The laminate used is a laminate in which an insulating layer is formed of a core-insulating layer and adhesive layers laminated on both sides of the core-insulating layer, and the ratio of higher etching rate to lower etching rate of the respective layers of the insulating layer is between 6:1 and 1:1. The metallic layer and the conductive layer are processed by the photo etching method. The insulating layer is processed by the wet etching method.

Abstract: A semiconductor device includes: a lower hydrogen-barrier film; a capacitor formed on the lower hydrogen-barrier film and including a lower electrode, a capacitive insulating film, and an upper electrode; an interlayer dielectric film formed so as to cover the periphery of the capacitor; and an upper hydrogen-barrier film covering the top and lateral portions of the capacitor. An opening, which exposes the lower hydrogen-barrier film where the lower hydrogen-barrier film is located around the capacitor, and which is tapered and flares upward, is formed in the interlayer dielectric film, and the upper hydrogen-barrier film is formed along the lateral and bottom faces of the opening, and is in contact with the lower hydrogen-barrier film in the opening.

Abstract: A semiconductor device includes at least a ferroelectric or high-dielectric-constant film and a surface coating that have been stacked in this order over a substrate. The surface coating is made of an acrylic resin.

Abstract: When an electronic device having an element including an insulating metal oxide film is manufactured, either dry cleaning or a cleaning solution containing substantially no water is used in a cleaning step conducted after a step of forming the insulating metal oxide film.

Abstract: A semiconductor device includes at least a ferroelectric or high-dielectric-constant film and a surface coating that have been stacked in this order over a substrate. The surface coating is made of an acrylic resin.

Abstract: A wireless suspension blank is made using a two-layer laminate composed of a metallic layer with the spring property and an electrically insulating layer. The first method includes a first step for working the metallic layer by the photo etching method, a second step for forming a wiring part on the insulating layer by the semi-additive method and a third step for working the insulating layer by the wet-etching method. The second method includes a first step for working the metallic layer by the photo etching method, a second step for forming a wiring part on the insulating layer by the semi-additive method and a third step for working the insulating layer by the plasma etching method. The third method includes a first step for forming a wiring part on the metallic layer by the semi-additive method, a second step for working the metallic layer by the wet-etching method and a third step for working the insulating layer by the dry-etching method or the wet-etching method.

Abstract: A method of manufacturing a wireless suspension blank is a method of manufacturing a wireless blank in which three-layered laminate formed of a metallic layer having the spring property and a conductive layer laminated on the metallic layer through an electrically insulating layer are used, wherein as the laminate used is a laminate in which an insulating layer is formed of core-insulating layer and adhesive layers laminated on both sides of the core-insulating layer, and the ratio of higher etching rate to lower etching rate of the respective layers of the insulating layer is between 6:1 and 1:1. By the photo etching method processed are the metallic layer and the conductive layer. The insulating layer is processed by the wet etching method.