Patents by Inventor Kazuo Yabe
Kazuo Yabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11923177Abstract: A plasma processing apparatus includes: a processing container having a vertical tubular shape and an opening formed in a side wall of the processing container, the processing container configured to accommodate a plurality of substrates in multiple stages; a plasma partition wall airtightly provided on an outer wall of the processing container and configured to cover the opening and define a plasma generation space; a plasma electrode provided along the plasma partition wall; and a processing gas supplier provided outside the plasma generation space and configured to supply a plasma generation gas.Type: GrantFiled: July 6, 2021Date of Patent: March 5, 2024Assignee: TOKYO ELECTRON LIMITEDInventors: Keiji Tabuki, Yamato Tonegawa, Kazumasa Igarashi, Kazuo Yabe
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Patent number: 11781219Abstract: A processing apparatus includes a processing container accommodating a substrate therein, a plasma generator having a plasma generation space communicating with an inside of the processing container, a first gas supply provided in the plasma generation space and configured to supply a hydrogen gas, and a second gas supply provided in the processing container and configured to supply a hydrogen gas.Type: GrantFiled: March 16, 2020Date of Patent: October 10, 2023Assignee: TOKYO ELECTRON LIMITEDInventors: Kazuo Yabe, Kazumasa Igarashi, Yamato Tonegawa
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Publication number: 20220270940Abstract: An abnormality detection method includes: supplying a gas controlled to a selected rate to a gas supply pipe via the gas pipe connected to the gas supply pipe, thereby introducing the gas into a reaction region of a processing container provided in a processing apparatus from a gas hole of the gas supply pipe; measuring a pressure inside the gas pipe by a pressure gauge attached to the gas pipe; and detecting an abnormality of at least one of the gas supply pipe and the gas pipe based on the pressure measured at the measuring.Type: ApplicationFiled: February 18, 2022Publication date: August 25, 2022Inventors: Shingo HISHIYA, Nobutoshi TERASAWA, Fumiaki NAGAI, Kazuaki SASAKI, Hiroaki KIKUCHI, Masayuki KITAMURA, Kazuo YABE, Motoshi FUKUDOME, Tatsuya MIYAHARA, Eiji KIKAMA, Yuki TANABE, Tomoyuki NAGATA
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Publication number: 20220013333Abstract: A plasma processing apparatus includes: a processing container having a vertical tubular shape and an opening formed in a side wall of the processing container, the processing container configured to accommodate a plurality of substrates in multiple stages; a plasma partition wall airtightly provided on an outer wall of the processing container and configured to cover the opening and define a plasma generation space; a plasma electrode provided along the plasma partition wall; and a processing gas supplier provided outside the plasma generation space and configured to supply a plasma generation gas.Type: ApplicationFiled: July 6, 2021Publication date: January 13, 2022Inventors: Keiji TABUKI, Yamato TONEGAWA, Kazumasa IGARASHI, Kazuo YABE
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Publication number: 20200299839Abstract: A processing apparatus includes a processing container accommodating a substrate therein, a plasma generator having a plasma generation space communicating with an inside of the processing container, a first gas supply provided in the plasma generation space and configured to supply a hydrogen gas, and a second gas supply provided in the processing container and configured to supply a hydrogen gas.Type: ApplicationFiled: March 16, 2020Publication date: September 24, 2020Inventors: Kazuo YABE, Kazumasa IGARASHI, Yamato TONEGAWA
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Patent number: 10351952Abstract: A film formation apparatus of forming a thin film by stacking a molecular layer of an oxide on a surface of a substrate in a vacuum atmosphere formed within a vacuum chamber includes: a source gas supply unit supplying a source gas containing a source to the substrate; an atmosphere gas supply unit supplying an atmosphere gas to the vacuum chamber; an energy supply unit supplying energy to the ozone atmosphere; a control unit configured to output a control signal for repeatedly performing a cycle including a supply of the source gas, a supply of the atmosphere gas, and a supply of energy plural times; a buffer region connected to the vacuum chamber, an inert gas being supplied to the buffer region; and a partition unit partitioning the buffer region with respect to the vacuum chamber and making the buffer region communicate with the vacuum chamber.Type: GrantFiled: May 29, 2015Date of Patent: July 16, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Kazuo Yabe, Akira Shimizu
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Patent number: 10290496Abstract: A substrate processing apparatus includes: a protrusion portion formed by a side peripheral wall of a processing container which swells outward, and configured to form a vertically elongated space communicating with a processing space for accommodating a substrate holder and performing a process; a gas discharge portion provided in the vertically elongated space, and configured to discharge a process gas into the processing space; an antenna provided in the protrusion portion along a vertical direction and supplied with a high-frequency power for converting the process gas into a plasma in the vertically elongated space; and a shield extending leftward and rightward in the protrusion portion at positions closer to the processing space than the antenna and configured to shield an electric field formed by the antenna and to suppress a formation of the plasma in the processing space.Type: GrantFiled: July 26, 2017Date of Patent: May 14, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Jun Ogawa, Kazuo Yabe
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Publication number: 20180090311Abstract: There is provided a boron film forming method which includes forming a boron film on a target substrate by CVD by supplying a boron-containing gas as a film-forming source gas to the target substrate while heating the target substrate to a predetermined temperature, the boron film being made of boron and inevitable impurities and used for a semiconductor device.Type: ApplicationFiled: September 22, 2017Publication date: March 29, 2018Inventors: Takahiro MIYAHARA, Kazuo YABE, Shigeru NAKAJIMA
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Publication number: 20180033618Abstract: A substrate processing apparatus includes: a protrusion portion formed by a side peripheral wall of a processing container which swells outward, and configured to form a vertically elongated space communicating with a processing space for accommodating a substrate holder and performing a process; a gas discharge portion provided in the vertically elongated space, and configured to discharge a process gas into the processing space; an antenna provided in the protrusion portion along a vertical direction and supplied with a high-frequency power for converting the process gas into a plasma in the vertically elongated space; and a shield extending leftward and rightward in the protrusion portion at positions closer to the processing space than the antenna and configured to shield an electric field formed by the antenna and to suppress a formation of the plasma in the processing space.Type: ApplicationFiled: July 26, 2017Publication date: February 1, 2018Inventors: Jun OGAWA, Kazuo YABE
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Patent number: 9552981Abstract: A metal oxide film forming method includes: repeating a cycle a first predetermined number of times, the cycle including supplying a gas containing an organic metal precursor into a processing chamber where an object to be processed is accommodated, and supplying oxygen gas into the processing chamber after the gas containing the organic metal precursor is supplied into the processing chamber; and supplying ozone gas into the processing chamber, wherein repeating the cycle and supplying the ozone gas are repeated a second predetermined number of times, so that a metal oxide film is formed on a surface of the object to be processed.Type: GrantFiled: February 4, 2015Date of Patent: January 24, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Kazuo Yabe, Jun Ogawa
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Patent number: 9425071Abstract: A film forming method for obtaining a thin film by laminating molecular layers of oxide on a surface of a substrate in a vacuum atmosphere includes performing a cycle a plurality of times. The cycle includes: supplying a source gas containing a source to the substrate in a vacuum vessel to adsorb the source onto the substrate; forming an ozone atmosphere containing ozone having a concentration not less than that where a chain decomposition reaction is caused in the vacuum vessel; and forcibly decomposing the ozone by supplying energy to the ozone atmosphere to generate active species of oxygen, and oxidizing the source adsorbed onto the surface of the substrate by the active species to obtain the oxide.Type: GrantFiled: April 28, 2015Date of Patent: August 23, 2016Assignees: TOKYO ELECTRON LIMITED, IWATANI CORPORATIONInventors: Kazuo Yabe, Akira Shimizu, Koichi Izumi, Masahiro Furutani
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Publication number: 20160148801Abstract: A substrate processing apparatus, that performs oxidization on a surface of a substrate in a vacuum atmosphere formed in a vacuum chamber, includes an atmosphere gas supply part configured to supply an atmosphere gas into the vacuum chamber to form a processing atmosphere containing ozone and hydrogen donor, wherein a concentration of the ozone is above a threshold concentration to trigger chain reaction of decomposition. The substrate processing apparatus further includes an energy supply part configured to supply an energy to the processing atmosphere to oxidize a surface of a substrate with reactive species generated by forcibly decomposing the ozone and hydroxyl radical generated by reaction of the hydrogen donor.Type: ApplicationFiled: November 13, 2015Publication date: May 26, 2016Inventors: Kazuo YABE, Akira SHIMIZU, Kazuhide HASEBE
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Publication number: 20150361550Abstract: Film formation apparatus includes: rotation mechanism to repeat alternately placing the substrate in first region and second region; raw material gas supply unit to supply the first region with gaseous raw material; processing space formation member to move up and down to form processing space isolated from the first region; atmosphere gas supply unit to supply atmosphere gas for forming ozone atmosphere where chain decomposition reaction is generated; energy supply unit to forcibly decompose the ozone by supplying energy to the ozone atmosphere and to obtain the oxide by oxidizing the raw material adsorbed to surface of the substrate; buffer region connected to the processing space and being supplied with inert gas; and partition unit to partition the buffer region off from the processing space when the atmosphere gas is supplied to the processing space and to have the buffer region communicate with the processing space when ozone is decomposed.Type: ApplicationFiled: June 5, 2015Publication date: December 17, 2015Inventors: Kazuo YABE, Akira SHIMIZU
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Publication number: 20150354060Abstract: A film formation apparatus of forming a thin film by stacking a molecular layer of an oxide on a surface of a substrate in a vacuum atmosphere formed within a vacuum chamber includes: a source gas supply unit supplying a source gas containing a source to the substrate; an atmosphere gas supply unit supplying an atmosphere gas to the vacuum chamber; an energy supply unit supplying energy to the ozone atmosphere; a control unit configured to output a control signal for repeatedly performing a cycle including a supply of the source gas, a supply of the atmosphere gas, and a supply of energy plural times; a buffer region connected to the vacuum chamber, an inert gas being supplied to the buffer region; and a partition unit partitioning the buffer region with respect to the vacuum chamber and making the buffer region communicate with the vacuum chamber.Type: ApplicationFiled: May 29, 2015Publication date: December 10, 2015Inventors: Kazuo YABE, Akira SHIMIZU
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Publication number: 20150318170Abstract: A film forming method for obtaining a thin film by laminating molecular layers of oxide on a surface of a substrate in a vacuum atmosphere includes performing a cycle a plurality of times. The cycle includes: supplying a source gas containing a source to the substrate in a vacuum vessel to adsorb the source onto the substrate; forming an ozone atmosphere containing ozone having a concentration not less than that where a chain decomposition reaction is caused in the vacuum vessel; and forcibly decomposing the ozone by supplying energy to the ozone atmosphere to generate active species of oxygen, and oxidizing the source adsorbed onto the surface of the substrate by the active species to obtain the oxide.Type: ApplicationFiled: April 28, 2015Publication date: November 5, 2015Inventors: Kazuo YABE, Akira SHIMIZU, Koichi IZUMI, Masahiro FURUTANI
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Publication number: 20150228473Abstract: A metal oxide film forming method includes: repeating a cycle a first predetermined number of times, the cycle including supplying a gas containing an organic metal precursor into a processing chamber where an object to be processed is accommodated, and supplying oxygen gas into the processing chamber after the gas containing the organic metal precursor is supplied into the processing chamber; and supplying ozone gas into the processing chamber, wherein repeating the cycle and supplying the ozone gas are repeated a second predetermined number of times, so that a metal oxide film is formed on a surface of the object to be processed.Type: ApplicationFiled: February 4, 2015Publication date: August 13, 2015Inventors: Kazuo YABE, Jun OGAWA
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Patent number: 8853100Abstract: According to an embodiment of present disclosure, a film formation method is provided. The film formation method includes supplying a first process gas as a source gas for obtaining a reaction product to a substrate while rotating a turntable and revolving the substrate, and supplying a second process gas as a gas for nitriding the first process gas adsorbed to the substrate to the substrate in a position spaced apart along a circumferential direction of the turntable from a position where the first process gas is supplied to the substrate. Further, the film formation method includes providing a separation region along the circumferential direction of the turntable between a first process gas supply position and a second process gas supply position, and irradiating ultraviolet rays on a molecular layer of the reaction product formed on the substrate placed on the turntable to control stresses generated in a thin film.Type: GrantFiled: June 28, 2013Date of Patent: October 7, 2014Assignee: Tokyo Electron LimitedInventors: Masanobu Igeta, Jun Sato, Kazuo Yabe, Hitoshi Kato, Yusaku Izawa
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Publication number: 20140004713Abstract: According to an embodiment of present disclosure, a film formation method is provided. The film formation method includes supplying a first process gas as a source gas for obtaining a reaction product to a substrate while rotating a turntable and revolving the substrate, and supplying a second process gas as a gas for nitriding the first process gas adsorbed to the substrate to the substrate in a position spaced apart along a circumferential direction of the turntable from a position where the first process gas is supplied to the substrate. Further, the film formation method includes providing a separation region along the circumferential direction of the turntable between a first process gas supply position and a second process gas supply position, and irradiating ultraviolet rays on a molecular layer of the reaction product formed on the substrate placed on the turntable to control stresses generated in a thin film.Type: ApplicationFiled: June 28, 2013Publication date: January 2, 2014Inventors: Masanobu IGETA, Jun SATO, Kazuo YABE, Hitoshi KATO, Yusaku IZAWA
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Publication number: 20120028471Abstract: A method of manufacturing a semiconductor device includes: forming a thin film on a substrate; forming a resist mask which forms a photoresist mask having an elliptical hole pattern on the thin film; shrinking a hole size of the second pattern by forming an insulating film on a side wall of the second pattern of the photoresist layer; and etching the thin film using the insulating film and the photoresist layer which form the second pattern having the shrinked hole size as a mask.Type: ApplicationFiled: February 18, 2011Publication date: February 2, 2012Applicant: TOKYO ELECTRON LIMITEDInventors: Kenichi Oyama, Kazuo Yabe, Hidetami Yaegashi
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Publication number: 20090110824Abstract: In accordance with a set temperature profile including: a first step in which a temperature is varied from a first temperature to a second temperature during a first time period; a second step in which the temperature is maintained at the second temperature during a second time period; and a third step in which the temperature is varied from the second temperature to a third temperature; a substrate is subjected to a film deposition process. The first temperature, the second temperature, and the third temperature are determined based on the first relationship between temperature and film thickness, the measured film thicknesses at the plurality of positions, and a predetermined target film thickness. There are calculated expected film thicknesses at a plurality of positions on a substrate to be actually processed in accordance with the set temperature profile corresponding to the determined first temperature, the determined second temperature, and the determined third temperature.Type: ApplicationFiled: October 28, 2008Publication date: April 30, 2009Inventors: Yuichi Takenaga, Takahito Kasai, Minoru Obata, Yoshihiro Takezawa, Kazuo Yabe