Abstract: A method to produce metallic beryllium spheres with high sphericity in a large quantity efficiently at a low cost is provided herein. The method of continuously producing metal beryllium spheres comprises the steps of: collecting granulated beryllium spheres produced by charging beryllium powder into a rotary kiln; classifying the collected beryllium spheres by particle size with an automatic sieve; and crushing particles of beryllium spheres of non-target diameters and mixing them with the raw material beryllium powder for reuse. The rotary kiln has a core tube the inner surface of which is coated with beryllium oxide by sintering the slurry coating of beryllium hydroxide applied after alkaline silica treatment.

Abstract: This invention has an object to provide a method for producing a beryllium solution by dissolving beryllium oxide, the method being novel and having high energy efficiency. A production method (M10) for producing a beryllium solution includes a main heating step (S13) of dielectrically heating an acidic solution containing beryllium oxide to generate a beryllium solution.

Abstract: To produce metallic beryllium spheres with high sphericity in a large quantity efficiently at a low cost by a simple method. The continuously producing method of metal beryllium spheres, comprising the steps of: collecting granulated beryllium spheres produced b by charging beryllium powder into a rotary kiln; classifying the collected beryllium spheres by particle size with an automatic sieve; and crushing particles of beryllium spheres of non-target diameters and mixing them with the raw material beryllium powder for reuse. The rotary kiln has a core tube the inner surface of which is coated with beryllium oxide by sintering the slurry coating of beryllium hydroxide applied after alkaline silica treatment.

Abstract: A mark having a length nT (n being an integer equal to or greater than 3 and T being a clock period) is formed by modulating irradiation laser power with three values of recording power Pw, erase power Pe, and bias power Pb (Pw>Pe>Pb). Constant strength periods (At) of the recording power Pw are set as AtT, A1T, . . . , and AmT and constant strength periods (Bt) of the bias power Pb are set as BtT, B1T, . . . , BmT, and CT (C=?1 to 3). The application of laser is divided into pulses in order of AtT, BtT, A1T, B1T, . . . , AmT, BmT, and CT (m=(n?k)/2, k=3 (if n is an odd number), or k=4 (if n is an even number)). (Here, the constant strength period of the recording power Pw for n=3, n=4, n?5 (odd number), and n?6 (even number) is set as At3, At4, Atod, and Atev, the constant strength period of the bias power Pb for n=3, n=4, n?5 (odd number), and n?6 (even number) is set as Bt3, Bt4, Btod, and Btev, and then, At3+Bt3=Atod+Btod=Am+Bm=2T and At4+Bt4=Atev+Btev=3T).

Abstract: A mark having a length nT (n being an integer equal to or greater than 3 and T being a clock period) is formed by modulating irradiation laser power with three values of recording power Pw, erase power Pe, and bias power Pb (Pw>Pe>Pb). Constant strength periods (At) of the recording power Pw are set as AtT, A1T, . . . , and AmT and constant strength periods (Bt) of the bias power Pb are set as BtT, B1T, . . . , BmT, and CT (C=?1 to 3). The application of laser is divided into pulses in order of AtT, BtT, A1T, B1T, . . . , AmT, BmT, and CT (m=(n?k)/2, k=3 (if n is an odd number), or k=4 (if n is an even number)). (Here, the constant strength period of the recording power Pw for n=3, n=4, n?5 (odd number), and n?6 (even number) is set as At3, At4, Atod, and Atev, the constant strength period of the bias power Pb for n=3, n=4, n?5 (odd number), and n?6 (even number) is set as Bt3, Bt4, Btod, and Btev, and then, At3+Bt3=Atod+Btod=Am+Bm=2T and At4+Bt4=Atev+Btev=3T).

Abstract: A mark having a length nT (n being an integer equal to or greater than 3 and T being a clock period) is formed by modulating irradiation laser power with three values of recording power Pw, erase power Pe, and bias power Pb (Pw>Pe>Pb). Constant strength periods (At) of the recording power Pw are set as AtT, A1T, . . . , and AmT and constant strength periods (B) of the bias power Pb are set as BtT, B1T, . . . , BmT, and CT (C=?1 to 3). The application of laser is divided into pulses in order of AtT, BtT, A1T, B1T, . . . , AmT, BmT, and CT (m=(n?k)/2, k=3 (if n is an odd number), or k=4 (if n is an even number)). (Here, the constant strength period of the recording power Pw for n=3, n=4, n?5 (odd number), and n?6 (even number) is set as At3, At4, Atod, and Atev, the constant strength period of the bias power Pb for n=3, n=4, n?5 (odd number), and n?6 (even number) is set as Bt3, Bt4, Btod, and Btev, and then, At3+Bt3=Atod+Btod=Am+Bm=2T and At4+Bt4=Atev+Btev=3T).

Abstract: A phase-change optical storage medium has a substrate and a recording layer having a plurality of tracks for storing information. A material of which the recording layer is made has been initialized in a crystalline state in which an amplitude of a tracking-detection signal is smaller than a saturation value of the amplitude, the tracking-detection signal being obtained by receiving a reflected beam from the recording layer when the recording layer is irradiated with a laser beam in an off-track state while the optical storage medium is being rotated.

Abstract: A phase-change optical storage medium has a substrate, and a recording layer, to be recorded on which is at least one recorded mark representing information to be recorded by irradiating a recording light beam onto the recording layer in accordance with a recording pulse pattern of recording pulses rising from an erasing power and formed between a recording power larger than the erasing power and a bottom power smaller than the erasing power and of erasing pulses rising from the bottom power to the erasing power. The expressions (1) and (2): 1.00<(R1/R0)<1.15 . . . (1), 1.05<(R9/R0)<1.20 . . .

Abstract: Information to be recorded is recorded in a recording layer of a phase-change optical storage medium. The information to be recorded is modulated to generate modulated data. Desired mark-length data is generated based on the modulated data. Generated further based on the mark-length data is a recording pulse pattern of recording pulses rising from an erasing power and formed between a recording power larger than the erasing power and a bottom power smaller than the erasing power and of erasing pulses rising from the bottom power to the erasing power. A recording light beam is then irradiated onto the recording layer in accordance with the recording pulse pattern to record at least one recorded mark representing the information to be recorded. Used in recording is an optimum erasing power, as the erasing power, the optimum erasing power satisfying an expression (1): 1.000<(R1/R0)<1.030 . . .

Abstract: An optical disk consists of a first laminated layer structure and a second laminated layer structure. The first structure has a first transparent substrate having a first surface and a second surface on both sides thereof, provided on the first surface being a light-incident plane via which a light beam is to be incident in recording or reproduction, formed alternately on the second surface being a plurality of first lands and first grooves, and a first organic-dye recording layer formed on the second surface to cover the first lands and grooves. The second structure has a second substrate, alternately formed on which are a plurality of second lands and second grooves, a reflective film formed on the second transparent substrate to cover the second lands and grooves, and a second organic-dye recording layer formed on the reflective film to face the second transparent substrate.

Abstract: A mark having a length nT (n being an integer equal to or greater than 3 and T being a clock period) is formed by modulating irradiation laser power with three values of recording power Pw, erase power Pe, and bias power Pb (Pw>Pe>Pb). Constant strength periods (At) of the recording power Pw are set as AtT, A1T, . . . and AmT and constant strength periods (Bt) of the bias power Pb are set as BtT, B1T, . . . BmT, and CT (C=?1 to 3). The application of laser is divided into pulses in order of AtT, BtT, A1T, B1T, . . . , AmT, BmT, and CT (m=(n?k)/2, k=3 (if n is an odd number), or k=4 (if n is an even number)). (Here, the constant strength period of the recording power Pw for n=3, n=4, n?5 (odd number), and n?6 (even number) is set as At3, At4, Atod, and Atev, the constant strength period of the bias power Pb for n=3, n=4, n?5 (odd number), and n?6 (even number) is set as Bt3, Bt4, Btod, and Btev, and then, At3+Bt3=Atod+Btod=Am+Bm=2T and At4+Bt4=Atev+Btev=3T).

Abstract: A phase-change optical storage medium has a substrate and a recording layer having a plurality of tracks for storing information. A material of which the recording layer is made has been initialized in a crystalline state in which an amplitude of a tracking-detection signal is smaller than a saturation value of the amplitude, the tracking-detection signal being obtained by receiving a reflected beam from the recording layer when the recording layer is irradiated with a laser beam in an off-track state while the optical storage medium is being rotated.

Abstract: A phase-change optical storage medium has a substrate, and a recording layer, to be recorded on which is at least one recorded mark representing information to be recorded by irradiating a recording light beam onto the recording layer in accordance with a recording pulse pattern of recording pulses rising from an erasing power and formed between a recording power larger than the erasing power and a bottom power smaller than the erasing power and of erasing pulses rising from the bottom power to the erasing power. The expressions (1) and (2): 1.00<(R1/R0)<1.15 . . . (1), 1.05<(R9/R0)<1.20 . . .

Abstract: Information to be recorded is recorded in a recording layer of a phase-change optical storage medium. The information to be recorded is modulated to generate modulated data. Desired mark-length data is generated based on the modulated data. Generated further based on the mark-length data is a recording pulse pattern of recording pulses rising from an erasing power and formed between a recording power larger than the erasing power and a bottom power smaller than the erasing power and of erasing pulses rising from the bottom power to the erasing power. A recording light beam is then irradiated onto the recording layer in accordance with the recording pulse pattern to record at least one recorded mark representing the information to be recorded. Used in recording is an optimum erasing power, as the erasing power, the optimum erasing power satisfying an expression (1): 1.000<(R1/R0)<1.030 . . .

Abstract: An optical disk consists of a first laminated layer structure and a second laminated layer structure. The first structure has a first transparent substrate having a first surface and a second surface on both sides thereof, provided on the first surface being a light-incident plane via which a light beam is to be incident in recording or reproduction, formed alternately on the second surface being a plurality of first lands and first grooves, and a first organic-dye recording layer formed on the second surface to cover the first lands and grooves. The second structure has a second substrate, alternately formed on which are a plurality of second lands and second grooves, a reflective film formed on the second transparent substrate to cover the second lands and grooves, and a second organic-dye recording layer formed on the reflective film to face the second transparent substrate.

Abstract: An optical disk has a substrate, a first protective layer formed on the substrate, a recording layer formed on the first protective layer, a second protective layer formed on the recording layer, and a reflective layer formed on the second protective layer. The recording layer includes a composition expressed as (SbxTe1-x)aGebInc in which atomic ratios are 0.77≦x≦0.84, 0.85≦a≦0.95, 0.01≦b≦0.10 and 0.01≦c≦0.10 where a+b+c=1.

Abstract: There is disclosed an improved semiconductor memory device having a regular memory cell array and a spare memory cell array. Each spare memory cell constituting the spare memory cell array includes a first transistor selected by a read word line, whose drain is connected to a spare bit line and source is connected via a fuse to a power supply, and a second transistor connected between the interconnection between the first transistor and fuse and a ground. The fuse is selectively blown by flowing a blowing current through the fuse by selecting the second transistor through a write line to thereby disconnect a discharge current path of the spare bit line. The threshold voltage of the second transistor of the spare memory cell which is made conductive upon selection by the write line when the blowing current flows through the fuse is higher than a potential difference between a potential generated at the write line connected with another spare memory cell and a ground potential.