Abstract: Over a plug, a stopper insulating film made of an organic film is formed, followed by successive formation of an insulating film and a hard mask. In the presence of a patterned resist film, the hard mask is dry etched, whereby an interconnection groove pattern is transferred thereto. By ashing with oxygen plasma, the resist film is removed to form the interconnection-groove-pattern-transferred hard mask. At this time, the organic film constituting the stopper insulating film has been covered with the insulating film. Then, the insulating film, stopper insulating film and hard mask are removed to form the groove pattern of interconnection. Hydrogen annealing may be conducted after formation of the plug, or the stopper insulating film may be formed over the plug via an adhesion layer.

Abstract: Over a plug, a stopper insulating film made of an organic film is formed, followed by successive formation of an insulating film and a hard mask. In the presence of a patterned resist film, the hard mask is dry etched, whereby an interconnection groove pattern is transferred thereto. By ashing with oxygen plasma, the resist film is removed to form the interconnection-groove-pattern-transferred hard mask. At this time, the organic film constituting the stopper insulating film has been covered with the insulating film. Then, the insulating film, stopper insulating film and hard mask are removed to form the groove pattern of interconnection. Hydrogen annealing may be conducted after formation of the plug, or the stopper insulating film may be formed over the plug via an adhesion layer.

Abstract: Over a plug, a stopper insulating film made of an organic film is formed, followed by successive formation of an insulating film and a hard mask. In the presence of a patterned resist film, the hard mask is dry etched, whereby an interconnection groove pattern is transferred thereto. By ashing with oxygen plasma, the resist film is removed to form the interconnection-groove-pattern-transferred hard mask. At this time, the organic film constituting the stopper insulating film has been covered with the insulating film. Then, the insulating film, stopper insulating film and hard mask are removed to form the groove pattern of interconnection. Hydrogen annealing may be conducted after formation of the plug, or the stopper insulating film may be formed over the plug via an adhesion layer.

Abstract: Over a plug, a stopper insulating film made of an organic film is formed, followed by successive formation of an insulating film and a hard mask. In the presence of a patterned resist film, the hard mask is dry etched, whereby an interconnection groove pattern is transferred thereto. By ashing with oxygen plasma, the resist film is removed to form the interconnection-groove-pattern-transferred hard mask. At this time, the organic film constituting the stopper insulating film has been covered with the insulating film. Then, the insulating film, stopper insulating film and hard mask are removed to form the groove pattern of interconnection. Hydrogen annealing may be conducted after formation of the plug, or the stopper insulating film may be formed over the plug via an adhesion layer.

Abstract: There is disclosed a cleaning liquid for producing a semiconductor device which comprises (A) fluorine-containing compound; (B) water-soluble or water-miscible organic solvent; and (C) inorganic acid and/or organic acid, optionally, further comprises (D) quaternary ammonium salt or (D') a specific organic carboxylic acid ammonium salt and/or an organic carboxylic acid amine salt; as well as a process for producing a semiconductor device by forming a resist pattern on a substrate equipped on the surface with an insulating film layer or a metallic electroconductive layer, forming a via hole or electric wiring by dry etching, removing the resist pattern by ashing treatment with oxygen plasma; and effecting an cleaning treatment with the above cleaning liquid. The above cleaning liquid and production process can readily remove the deposit polymer formed in the case of dry etching without impairing metallic film and insulating film.