Abstract: An electricity-generating layer of a solar cell includes a carbon nanotube group containing vertically oriented carbon nanotubes. A fullerene is encapsulated in the carbon nanotube, an n-type dopant 113 is encapsulated between the fullerene and one end of the carbon nanotube, and a p-type dopant is encapsulated between the fullerene and the other end of the carbon nanotube.

Abstract: A solar cell includes a translucent member disposed on the incident side of sunlight, an electrode member disposed on the opposite side from the incident side of sunlight and includes a positive electrode and a negative electrode, and an electricity-generating layer that is disposed between the translucent member and the electrode member and is composed of carbon nanotubes, the electricity-generating layer including a p-type first carbon nanotube layer that is disposed near the electrode member and is electrically connected to the positive electrode, and an n-type second carbon nanotube layer that is disposed near the translucent member and is partially electrically connected to the negative electrode 6 via a conductive member.

Abstract: An electricity-generating layer of a solar cell includes a carbon nanotube group containing vertically oriented carbon nanotubes. A fullerene is encapsulated in the carbon nanotube, an n-type dopant 113 is encapsulated between the fullerene and one end of the carbon nanotube, and a p-type dopant is encapsulated between the fullerene and the other end of the carbon nanotube.

Abstract: Provided is a solar cell including: a transparent electrode (2) formed as an n-type semiconductor; a plurality of carbon nanotube groups (3) placed in parallel to each other on and perpendicularly to the lower surface of the transparent electrode (2); and metal electrodes (4) placed on the lower surfaces of the carbon nanotube groups (3) opposite to the electrode (2). The diameters of the carbon nanotubes of the carbon nanotube groups (3) in parallel to each other are varied from one side of the electrode (2) to the other side thereof, and the group III atoms are doped into the carbon nanotube groups to form p-type semiconductors.