Abstract: An antenna apparatus includes a dielectric substrate, a ground plate, a patch antenna provided with a patch radiating element, and a plurality of EBGs (Electromagnetic Band Gaps). The EBGs are composed of patch-shaped patterns formed on a surface of the substrate and connecting conductors electrically connecting the patch-shaped patterns and the ground plate. Each EBG is arranged to provide an EBG absent region having no EBG on the surface of the substrate. The patch radiating element is arranged within the EBG absent region. The EBG absent region is formed such that distances (absent distances) in a dominant polarized wave direction changes into a plurality of types depending on the position on a vertical patch line, where the distances range, to the boundary of the region, from an arbitrary position on the virtual patch line which is perpendicular to the dominant polarized wave direction of the patch antenna.

Abstract: An antenna device 1 has a dielectric substrate 2, a patch antenna 5 and electric power absorbing passive elements 21, 24 formed on a surface of the dielectric substrate. Each electric power absorbing passive element 21, 24 is formed between the patch antenna 5 and an edge portion in a polarized wave direction of the dielectric substrate 2. The electric power absorbing passive elements 21, 24 absorb a part of electric power received by the patch antenna 5. This makes it possible to suppress a surface current flowing to the edge portions of the dielectric substrate on a conductive plate (a front-surface conductor plate 3 or a back surface conductor plate 4) on the dielectric substrate.

Abstract: A headlamp for motor vehicles in which an inner lens formed with distribution beam control steps can easily be fastened to the front opening of the reflector. Holes, which receive respective protrusions protruding from the lower edge of the inner lens, are formed in the lower surface of the reflector, and cutout portions provided on the front end of the upper surface of the reflector are located further rearward than the protrusions, whereby the inner lens maintains engagement with the front opening of the reflector lens contact faces by its own weight. The upper edge of the inner lens can easily be fastened to the front end of the upper surface.

Abstract: The present invention relates to a method for forming an oxide film on a semiconductor substrate by a buffer LOCOS method, has for its object to prevent anomalous formation of the oxide film and also to suppress a spread of a bird's beak from an oxide film forming region, and includes a process of forming a polycrystalline or amorphous silicon film 23 on a semiconductor substrate 21, a process of exposing the silicon film 23 to a fluoric acid medium, a process of forming an oxidation-resistant film 24 on the silicon film 23, a process of patterning the oxidation-resistant film 24, land oxidizing the silicon film 23 and the semiconductor substrate 21 selectively with the oxidation-resistant film 24 as a mask.

Abstract: A bipolar transistor having self-aligned base and emitter regions is fabricated in a silicon layer which is epitaxially grown on a substrate so as to fill up a cavity formed through a polysilicon layer deposited on the substrate. The polysilicon layer is doped with impurities for creating an extrinsic base region in the epitaxially grown silicon layer and is insulated from the emitter electrode by a dielectric layer formed thereon. The dielectric layer can be provided by selectively oxidizing the polysilicon layer. Thus, the step formed at the emitter electrode is small and equal to the thickness of the dielectric layer, about 3000 .ANG., for example, thereby eliminating the faulty step coverage in the prior art self-aligned bipolar transistor usually having the step as large as 1 micron.