Patents by Inventor Kazushi Kono
Kazushi Kono has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10923419Abstract: A semiconductor device is provided which includes an interlayer dielectric formed on a semiconductor substrate, a first insulating layer, having a trench, formed on the interlayer dielectric, a barrier film formed on side and bottom surfaces of the first trench, an electric fuse formed on the barrier film, a second insulating layer formed to directly contact the electric fuse, and a third insulating layer formed on the second insulating layer. A linear expansion coefficient of the electric fuse is greater than a linear expansion coefficient of the first insulating layer and the second insulating layer, and a melting point of the barrier film is greater than a melting point of the electric fuse.Type: GrantFiled: August 21, 2019Date of Patent: February 16, 2021Assignee: Renesas Electronics CorporationInventors: Takeshi Iwamoto, Kazushi Kono, Masashi Arakawa, Toshiaki Yonezu, Shigeki Obayashi
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Publication number: 20190378796Abstract: A semiconductor device is provided which includes an interlayer dielectric formed on a semiconductor substrate, a first insulating layer, having a trench, formed on the interlayer dielectric, a barrier film formed on side and bottom surfaces of the first trench, an electric fuse formed on the barrier film, a second insulating layer formed to directly contact the electric fuse, and a third insulating layer formed on the second insulating layer. A linear expansion coefficient of the electric fuse is greater than a linear expansion coefficient of the first insulating layer and the second insulating layer, and a melting point of the barrier film is greater than a melting point of the electric fuse.Type: ApplicationFiled: August 21, 2019Publication date: December 12, 2019Inventors: Takeshi Iwamoto, Kazushi Kono, Masashi Arakawa, Toshiaki Yonezu, Shigeki Obayashi
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Publication number: 20190283288Abstract: Provided is a foamed heat-insulating material which encapsulates therein a low-heat conductivity gas and which yields high heat insulating performance. High-melting point beads that have been foamed up to a prescribed expansion ratio with a gas of low thermal conductivity by using a resin that does not soften at the beads-foaming temperature and that has a low gas transmission rate are mixed with low-temperature foam beads to be foamed within a forming die, and the resultant mixture is filled in a beads forming die cavity and foamed by heating.Type: ApplicationFiled: November 22, 2017Publication date: September 19, 2019Applicant: Mitsubishi Electric CorporationInventors: Yusuke NAKANISHI, Yuta KUBO, Masaru IMAIZUMI, Kazushi KONO
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Publication number: 20180138121Abstract: A semiconductor device is provided which includes an interlayer dielectric formed on a semiconductor substrate, a first insulating layer, having a trench, formed on the interlayer dielectric, a barrier film formed on side and bottom surfaces of the first trench, an electric fuse formed on the barrier film, a second insulating layer formed to directly contact the electric fuse, and a third insulating layer formed on the second insulating layer. A linear expansion coefficient of the electric fuse is greater than a linear expansion coefficient of the first insulating layer and the second insulating layer, and a melting point of the barrier film is greater than a melting point of the electric fuse.Type: ApplicationFiled: January 12, 2018Publication date: May 17, 2018Inventors: Takeshi IWAMOTO, Kazushi KONO, Masashi ARAKAWA, Toshiaki YONEZU, Shigeki OBAYASHI
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Patent number: 9893013Abstract: A semiconductor device having an electric fuse structure which receives an electric current to permit the electric fuse to be cut without damaging portions around the fuse. The electric fuse can be electrically connected between an electronic circuit and a redundant circuit as a spare of the electronic circuit. After these circuits are sealed with a resin, the fuse can be cut by receiving the electric current from the outside. The electric fuse is formed in a fine layer, and is made of a main wiring and a barrier film. The linear expansion coefficient of each of the main wiring and the barrier film is larger than that of each of the insulator layers. The melting point of each of the main wiring and the barrier film is lower than that of each of the insulator layers.Type: GrantFiled: October 20, 2016Date of Patent: February 13, 2018Assignee: Renesas Electronics CorporationInventors: Takeshi Iwamoto, Kazushi Kono, Masashi Arakawa, Toshiaki Yonezu, Shigeki Obayashi
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Publication number: 20170040261Abstract: A semiconductor device having an electric fuse structure which receives an electric current to permit the electric fuse to be cut without damaging portions around the fuse. The electric fuse can be electrically connected between an electronic circuit and a redundant circuit as a spare of the electronic circuit. After these circuits are sealed with a resin, the fuse can be cut by receiving the electric current from the outside. The electric fuse is formed in a fine layer, and is made of a main wiring and a barrier film. The linear expansion coefficient of each of the main wiring and the barrier film is larger than that of each of the insulator layers. The melting point of each of the main wiring and the barrier film is lower than that of each of the insulator layers.Type: ApplicationFiled: October 20, 2016Publication date: February 9, 2017Inventors: Takeshi IWAMOTO, Kazushi KONO, Masashi ARAKAWA, Toshiaki YONEZU, Shigeki OBAYASHI
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Patent number: 9508641Abstract: A semiconductor device having an electric fuse structure which receives an electric current to permit the electric fuse to be cut without damaging portions around the fuse. The electric fuse can be electrically connected between an electronic circuit and a redundant circuit as a spare of the electronic circuit. After these circuits are sealed with a resin, the fuse can be cut by receiving the electric current from the outside. The electric fuse is formed in a fine layer, and is made of a main wiring and a barrier film. The linear expansion coefficient of each of the main wiring and the barrier film is larger than that of each of the insulator layers. The melting point of each of the main wiring and the barrier film is lower than that of each of the insulator layers.Type: GrantFiled: January 6, 2015Date of Patent: November 29, 2016Assignee: Renesas Electronics CorporationInventors: Takeshi Iwamoto, Kazushi Kono, Masashi Arakawa, Toshiaki Yonezu, Shigeki Obayashi
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Patent number: 9478493Abstract: A semiconductor device having an electric fuse structure which receives an electric current to permit the electric fuse to be cut without damaging portions around the fuse. The electric fuse can be electrically connected between an electronic circuit and a redundant circuit as a spare of the electronic circuit. After these circuits are sealed with a resin, the fuse can be cut by receiving the electric current from the outside. The electric fuse is formed in a fine layer, and is made of a main wiring and a barrier film. The linear expansion coefficient of each of the main wiring and the barrier film is larger than that of each of the insulator layers. The melting point of each of the main wiring and the barrier film is lower than that of each of the insulator layers.Type: GrantFiled: January 6, 2015Date of Patent: October 25, 2016Assignee: Renesas Electronics CorporationInventors: Takeshi Iwamoto, Kazushi Kono, Masashi Arakawa, Toshiaki Yonezu, Shigeki Obayashi
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Publication number: 20150303144Abstract: A semiconductor device having an electric fuse structure which receives an electric current to permit the electric fuse to be cut without damaging portions around the fuse. The electric fuse can be electrically connected between an electronic circuit and a redundant circuit as a spare of the electronic circuit. After these circuits are sealed with a resin, the fuse can be cut by receiving the electric current from the outside. The electric fuse is formed in a fine layer, and is made of a main wiring and a barrier film. The linear expansion coefficient of each of the main wiring and the barrier film is larger than that of each of the insulator layers. The melting point of each of the main wiring and the barrier film is lower than that of each of the insulator layers.Type: ApplicationFiled: January 6, 2015Publication date: October 22, 2015Inventors: Takeshi IWAMOTO, Kazushi KONO, Masashi ARAKAWA, Toshiaki YONEZU, Shigeki OBAYASHI
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Patent number: 8723291Abstract: A semiconductor integrated circuit which can perform reliable relief processing using an electric fuse. The semiconductor integrated circuit includes a fuse wiring, a first electrode pad, a second electrode pad, a pollution-control layer, and a first via hole wiring and a second via hole wiring. The fuse wiring is cut by current exceeding a predetermined value. A first electrode pad is connected to one side of a fuse wiring, a second electrode pad is connected to the other of a fuse wiring, a pollution-control layer is formed in the upper layer and the lower layer of the fuse wiring via an insulating layer. In the fuse wiring, second via hole wiring of a pair is formed in the outside of a first via hole wiring so that the first the via hole wiring is surrounded.Type: GrantFiled: August 23, 2012Date of Patent: May 13, 2014Assignee: Renesas Electronics CorporationInventors: Toshiaki Yonezu, Takeshi Iwamoto, Shigeki Obayashi, Masashi Arakawa, Kazushi Kono
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Publication number: 20140021559Abstract: Provided is a semiconductor device having an electric fuse structure which receives the supply of an electric current to be permitted to be cut without damaging portions around the fuse. An electric fuse is electrically connected between an electronic circuit and a redundant circuit as a spare of the electronic circuit. After these circuits are sealed with a resin, the fuse can be cut by receiving the supply of an electric current from the outside. The electric fuse is formed in a fine layer, and is made of a main wiring and a barrier film. The linear expansion coefficient of each of the main wiring and the barrier film is larger than that of each of the insulator layers. The melting point of each of the main wiring and the barrier film is lower than that of each of the insulator layers.Type: ApplicationFiled: September 20, 2013Publication date: January 23, 2014Applicant: Renesas Electronics CorporationInventors: Takeshi IWAMOTO, Kazushi Kono, Masashi Arakawa, Toshiaki Yonezu, Shigeki Obayashi
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Patent number: 8487403Abstract: The semiconductor device which has an electric straight line-like fuse with a small occupying area is offered. A plurality of projecting portions 10f are formed in the position shifted from the middle position of electric fuse part 10a, and, more concretely, are formed in the position distant from via 10e and near via 10d. A plurality of projecting portions 20f are formed in the position shifted from the middle position of electric fuse part 20a, and, more concretely, are formed in the position distant from via 20d and near 20e. That is, projecting portions 10f and projecting portions 20f are arranged in the shape of zigzag.Type: GrantFiled: September 9, 2010Date of Patent: July 16, 2013Assignee: Renesas Electronics CorporationInventors: Kazushi Kono, Takeshi Iwamoto, Hisayuki Kato, Shigeki Obayashi, Toshiaki Yonezu
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Patent number: 8487402Abstract: The semiconductor device which has an electric straight line-like fuse with a small occupying area is offered. A plurality of projecting portions 10f are formed in the position shifted from the middle position of electric fuse part 10a, and, more concretely, are formed in the position distant from via 10e and near via 10d. A plurality of projecting portions 20f are formed in the position shifted from the middle position of electric fuse part 20a, and, more concretely, are formed in the position distant from via 20d and near 20e. That is, projecting portions 10f and projecting portions 20f are arranged in the shape of zigzag.Type: GrantFiled: August 26, 2010Date of Patent: July 16, 2013Assignee: Renesas Electronics CorporationInventors: Kazushi Kono, Takeshi Iwamoto, Hisayuki Kato, Shigeki Obayashi, Toshiaki Yonezu
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Publication number: 20130049166Abstract: A semiconductor integrated circuit which can perform reliable relief processing using an electric fuse. The semiconductor integrated circuit includes a fuse wiring, a first electrode pad, a second electrode pad, a pollution-control layer, and a first via hole wiring and a second via hole wiring. The fuse wiring is cut by a current exceeding a predetermined value. A first electrode pad is connected to one side of a fuse wiring, a second electrode pad is connected to the other of a fuse wiring, a pollution-control layer is formed in the upper layer and the lower layer of the fuse wiring via an insulating layer. In the fuse wiring, a second via hole wiring of a pair is formed in the outside of a first via hole wiring so that the first via hole wiring is surrounded.Type: ApplicationFiled: August 23, 2012Publication date: February 28, 2013Inventors: Toshiaki YONEZU, Takeshi Iwamoto, Shigeki Obayashi, Masashi Arakawa, Kazushi Kono
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Patent number: 8331185Abstract: In fuse program circuits, fuse element FS is implemented using metal interconnect at third or higher layer of multilayer metal interconnect. In each fuse program circuit, program information and fuse select information are sequentially transferred using a scan flip-flops, and fuses are selectively and electrically blown one by one. The fuse program circuit provided with fuse elements that can be programmed even after packaging is implemented with low power consumption and a low occupation area.Type: GrantFiled: March 12, 2010Date of Patent: December 11, 2012Assignee: Renesas Electronics CorporationInventors: Shigeki Obayashi, Toshiaki Yonezu, Takeshi Iwamoto, Kazushi Kono, Masashi Arakawa, Takahiro Uchida
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Publication number: 20110006392Abstract: The semiconductor device which has an electric straight line-like fuse with a small occupying area is offered. A plurality of projecting portions 10f are formed in the position shifted from the middle position of electric fuse part 10a, and, more concretely, are formed in the position distant from via 10e and near via 10d. A plurality of projecting portions 20f are formed in the position shifted from the middle position of electric fuse part 20a, and, more concretely, are formed in the position distant from via 20d and near 20e. That is, projecting portions 10f and projecting portions 20f are arranged in the shape of zigzag.Type: ApplicationFiled: September 9, 2010Publication date: January 13, 2011Inventors: Kazushi Kono, Takeshi Iwamoto, Hisayuki Kato, Shigeki Obayashi, Toshiaki Yonezu
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Publication number: 20100320562Abstract: The semiconductor device which has an electric straight line-like fuse with a small occupying area is offered. A plurality of projecting portions 10f are formed in the position shifted from the middle position of electric fuse part 10a, and, more concretely, are formed in the position distant from via 10e and near via 10d. A plurality of projecting portions 20f are formed in the position shifted from the middle position of electric fuse part 20a, and, more concretely, are formed in the position distant from via 20d and near 20e. That is, projecting portions 10f and projecting portions 20f are arranged in the shape of zigzag.Type: ApplicationFiled: August 26, 2010Publication date: December 23, 2010Inventors: KAZUSHI KONO, Takeshi Iwamoto, Hisayuki Kato, Shigeki Obayashi, Toshiaki Yonezu
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Publication number: 20100264514Abstract: Provided is a semiconductor device having an electric fuse structure which receives the supply of an electric current to be permitted to be cut without damaging portions around the fuse. An electric fuse is electrically connected between an electronic circuit and a redundant circuit as a spare of the electronic circuit. After these circuits are sealed with a resin, the fuse can be cut by receiving the supply of an electric current from the outside. The electric fuse is formed in a fine layer, and is made of a main wiring and a barrier film. The linear expansion coefficient of each of the main wiring and the barrier film is larger than that of each of the insulator layers. The melting point of each of the main wiring and the barrier film is lower than that of each of the insulator layers.Type: ApplicationFiled: April 15, 2010Publication date: October 21, 2010Inventors: Takeshi IWAMOTO, Kazushi KONO, Masashi ARAKAWA, Toshiaki YONEZU, Shigeki OBAYASHI
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Patent number: 7808076Abstract: The semiconductor device which has an electric straight line-like fuse with a small occupying area is offered. A plurality of projecting portions 10f are formed in the position shifted from the middle position of electric fuse part 10a, and, more concretely, are formed in the position distant from via 10e and near via 10d. A plurality of projecting portions 20f are formed in the position shifted from the middle position of electric fuse part 20a, and, more concretely, are formed in the position distant from via 20d and near 20e. That is, projecting portions 10f and projecting portions 20f are arranged in the shape of zigzag.Type: GrantFiled: December 17, 2007Date of Patent: October 5, 2010Assignee: Renesas Technology Corp.Inventors: Kazushi Kono, Takeshi Iwamoto, Hisayuki Kato, Shigeki Obayashi, Toshiaki Yonezu
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Publication number: 20100178752Abstract: A fuse includes a fuse portion laid in such a manner that the direction of each turn of the fuse portion is parallel to the direction in which pads are arranged. The distance between the pads and the fuse portion is defined as the distance between the side of a pad facing the fuse portion and the pad nearest to the turn facing the particular side. The distance between the turn of the fuse portion and the nearest pad is the distance between the pads and the fuse portion. The pads and the fuse portion are distant from each other by a length at least ten times the width of the fuse.Type: ApplicationFiled: March 24, 2010Publication date: July 15, 2010Applicant: Renesas Technology Corp.Inventors: Kazushi KONO, Takeshi IWAMOTO, Toshiaki YONEZU