Abstract: A digital twin computation section collects a speed of an own ship, a position of the own ship, and a heading of the own ship in real time, and reproduces an actual hull motion of the own ship realized at a current steering angle on a navigational electronic marine chart. A simulation computation section displays, on the navigational electronic marine chart, an assumed hull motion of the own ship determined by calculation that assumes that a force acting on the hull is a driving force at the current steering angle. A resultant force of external forces computation section calculates an acting direction and a magnitude of a resultant force of external forces acting on the hull based on a ship speed difference, ship position difference, and heading difference between the actual hull motion and the assumed hull motion.

Abstract: In collision-avoidance maneuvering in congested waters, an own ship is decelerated by astern power. The own ship is continuously navigated on a current target course with a propulsion propeller always rotated forward at the stern of the own ship. The astern power is generated as the propulsion of a propeller slipstream with rudder angles formed at a pair of right and left high-lift rudders disposed behind the propulsion propeller. In the decelerating maneuvering, the rudder angles formed at the high-lift rudders are controlled within a range from a rudder angle for applying a maximum propeller slipstream as the astern power to a rudder angle for eliminating the ahead power of the propeller slipstream, and the deceleration of the own ship is controlled by changing the astern power according to the rudder angles.

Abstract: In collision-avoidance maneuvering in congested waters, an own ship is decelerated by astern power. The own ship is continuously navigated on a current target course with a propulsion propeller always rotated forward at the stern of the own ship. The astern power is generated as the propulsion of a propeller slipstream with rudder angles formed at a pair of right and left high-lift rudders disposed behind the propulsion propeller. In the decelerating maneuvering, the rudder angles formed at the high-lift rudders are controlled within a range from a rudder angle for applying a maximum propeller slipstream as the astern power to a rudder angle for eliminating the ahead power of the propeller slipstream, and the deceleration of the own ship is controlled by changing the astern power according to the rudder angles.

Abstract: The power transmission apparatus for a vehicle has a main shaft having drive gears mounted thereto and a countershaft having driven gears mounted thereto, and the respective shafts are attached to a case. A reverse shaft attached to the case has an idler gear for reverse operation or a reverse idler gear rotatably attached thereto which is engaged with a drive gear for reverse operation and a driven gear for reverse operation. The reverse shaft has a projection which is integrally formed thereon and is in contact with one side surface of the reverse idler gear, and has a washer mounted thereto which is in contact with the other side surface of the reverse idler gear.

Abstract: A blowby gas circulation system for an engine having a crankcase and an intake system includes an oil tank which is independent of the crankcase, a first breather chamber and second breather chamber which are integrally provided with the crankcase. The oil tank supplies engine oil reserved therein to the crankcase and introduces a first gas-liquid mixture generated in the crankcase. The first gas-liquid mixture is separated into a second gas-liquid mixture and engine oil in the oil tank. Then, the second gas-liquid mixture is sent to a first breather chamber, being separated into a third gas-liquid mixture and engine oil. The third gas-liquid mixture is sent to a second breather chamber in which the third gas-liquid mixture is separated into blowby gas and engine oil. The blowby gas is sucked into the intake system and the engine oil is returned to the crankcase.

Abstract: The power transmission apparatus for a vehicle has a main shaft having drive gears mounted thereto and a countershaft having driven gears mounted thereto, and the respective shafts are attached to a case. A reverse shaft attached to the case has an idler gear for reverse operation or a reverse idler gear rotatably attached thereto which is engaged with a drive gear for reverse operation and a driven gear for reverse operation. The reverse shaft has a projection which is integrally formed thereon and is in contact with one side surface of the reverse idler gear, and has a washer mounted thereto which is in contact with the other side surface of the reverse idler gear.

Abstract: A blowby gas circulation system for an engine having a crankcase and an intake system comprises an oil tank which is independently of the crankcase, a first breather chamber and second breather chamber which are integrally provided with the crankcase. The oil tank supplies engine oil reserved therein to the crankcase and introduces a first gas-liquid mixture generated in the crankcase. The first gas-liquid mixture is separated into a second gas-liquid mixture and engine oil in the oil tank. Then, the second gas-liquid mixture is sent to a first breather chamber, being separated into a third gas-liquid mixture and engine oil. The third gas-liquid mixture is sent to a second breather chamber in which the third gas-liquid mixture is separated into blowby gas and engine oil. The blowby gas is sucked into the intake system and the engine oil is returned to the crankcase.

Abstract: A SRAM having its memory cell constructed to include transfer MISFETs to be controlled by word lines and a flip-flop circuit having driver MISFETs and load MISFETs. Plate electrodes of large area fixed on predetermined power source lines are arranged over the load MISFETs such that the plate electrodes over the offset region of the load MISFETs are formed with an opening. A silicon nitride film having a thickness permeable to hydrogen but not to humidity is formed over the transfer MISFETs and the driver MISFETs formed over the main surface of a semiconductor substrate and the load MISFETs formed of a polycrystalline silicon film deposited on the driver MISFETs.

Abstract: A parallel-plate plasma etching apparatus includes a susceptor electrode and a shower electrode which are arranged in a process chamber. A semiconductor wafer is placed on the susceptor electrode. A shower region defined by a plurality of process gas supply holes is formed in the shower electrode. The shower electrode is cooled by a cooling block and causes an effective electrode portion of the shower electrode to have a temperature gradient such that a temperature at the central portion of the effective electrode portion is lower than a temperature at the peripheral portion of the effective electrode portion. The diameter of the shower region is selected to be smaller than the diameter of the wafer by 5 to 25% such that degradation of planar uniformity of a degree of etching anisotropy on the wafer caused by the temperature gradient of the effective electrode portion is compensated for.

Abstract: The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m.sup.2 /hr.

Abstract: A SRAM having its memory cell constructed to include transfer MISFETs to be controlled by word lines and a flip-flop circuit having driver MISFETs and load MISFETs. Plate electrodes of large area fixed on predetermined power source lines are arranged over the load MISFETs such that the plate electrodes over the offset region of the load MISFETs are formed with an opening. A silicon nitride film having a thickness permeable to hydrogen but not to humidity is formed over the transfer MISFETs and the driver MISFETs formed over the main surface of a semiconductor substrate and the load MISFETs formed of a polycrystalline silicon film deposited on the driver MISFETs.

Abstract: The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m.sup.2 /hr.