Abstract: An object of the invention is to provide a multilayer ceramic capacitor having high dielectric constant, good temperature characteristic, and an improved IR temperature dependency. According to the present invention, a capacitor device body 10, wherein dielectric layers 2 comprising dielectric ceramic composition and internal electrode layers 3 are alternately laminated, characterized in that said dielectric ceramic composition comprises a plural number of crystal particles 2a wherein said crystal particles 2a form Ca dispersing area 25a wherein at least said Ca is dispersed from the surface to inside of crystal particles, and when considering crystal particles 2a having an average particle diameter of D50, an average depth T of said Ca dispersing area is controlled within a range of 10 to 30% with respect to the average particle diameter of D50, is provided.

Abstract: A multilayer ceramic capacitor comprising a capacitor element body: wherein dielectric layers composed of a dielectric ceramic composition and internal electrode layers are alternately stacked; the dielectric ceramic composition comprises a plurality of dielectric particles each having a shell, wherein subcomponents are dispersed in a main component, formed around a core substantially composed of the main component; and a difference of the maximum thickness and the minimum thickness of the shell in the dielectric particles having an average particle diameter is controlled to be 6 to 60% of a radius of the dielectric particles; wherein a high permittivity and preferable temperature characteristic are obtained and TC bias characteristics are improved, is provided.

Abstract: A highly reliable ceramic electronic device having an excellent temperature characteristic of a capacitance and a low IR temperature dependency, comprising a dielectric layer: wherein the dielectric layer includes a main component expressed by a composition formula of BamTiO2+m, wherein “m” satisfies 0.995?m?1.010 and a ratio of Ba and Ti satisfies 0.995?Ba/Ti?1.010, and, as subcomponents, an oxide of Al and an oxide of Si or an oxide of R (note that R is at least one kind selected from Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu); and includes a secondary phase composed of at least a part of the oxide of Al and at least a part of the oxide of Si or the oxide of R and being different from a main phase mainly composed of the main component; and the production method are provided.

Abstract: A dielectric ceramic composition, comprising a main component including barium titanate; a first subcomponent including at least one kind selected from MgO, CaO, BaO and SrO; a second subcomponent functioning as a sintering auxiliary agent; a third subcomponent including at least one kind selected from V2O5, MoO3 and WO3; a fourth subcomponent including an oxide of R1 (note that R1 is at least one kind selected from Sc, Er, Tm Yb and Lu); a fifth subcomponent including CaZrO3 or CaO+ZrO2; and an eighth subcomponent including an oxide of A (note that A is at least one kind selected from a cation element group having an effective ionic radius at the time of 6 coordination of 0.065 nm to 0.085 nm); wherein a ratio of the eighth subcomponent with respect to 100 moles of the main component is 0 to 4 moles (note that 0 mole and 4 moles are excluded, and the value is in terms of an A oxide).

Abstract: A dielectric ceramic composition having a main ingredient including a dielectric oxide expressed by the formula {(Me1-xCax)O}m.(Zr1-yTiy)O2, where the symbol Me indicating the name of the element in said formula is at least one of Sr, Mg, and Ba and where the symbols m, x, and y indicating the molar ratios of the formulation in the formula are in relationships of 0.995?m<1.020, 0<x?0.15, and 0?y?1.00, a first sub ingredient including an oxide of R (where R is a rare earth element), a second sub ingredient including an oxide of Mg, and a third sub ingredient including an oxide of Mn, wherein the ratios of the sub ingredients with respect to 100 moles of the main ingredient are first sub ingredient: 0.1 to 6 moles (value converted to oxide of R), second sub ingredient: 0.1 to 5 moles (value converted to oxide of Mg), and third sub ingredient: 0.1 to 2.

Abstract: An electronic device having an element body, wherein dielectric layers and internal electrode layers are alternately stacked, wherein a hetero phase is formed in the dielectric layers and/or the internal electrode layers; and the hetero phase includes a Mg element and a Mn element. Preferably, the hetero phase is formed at least at a part near boundaries of the dielectric layers and the internal electrode layers.

Abstract: A ceramic electronic device including a dielectric layer, wherein the dielectric layer includes a main component expressed by a composition formula of Bam TiO2+m, wherein “m” satisfies 0.995?m?1.010 and a ratio of Ba and Ti satisfies 0.995?Ba/Ti?1.010, and a subcomponent (a sixth subcomponent) including an oxide of Al; and a content of the Al compound is 0 to 4.0 moles (note that 0 is not included) in terms of Al2O3 with respect to 100 moles of the main component; and preferably, the dielectric layer includes a segregation phase, and the segregation phase includes an oxide of Al.

Abstract: In a multilayer ceramic capacitor of the present invention, a first rare earth element (R1) and a second rare earth element (R2) respectively diffuse in each of crystal grains forming dielectric layers and, assuming that, in the crystal grains each having an average grain diameter D, a ratio of a depth d1 of a diffusion layer of the first rare earth element (R1) from the surface of the crystal grain relative to the diameter D of the crystal grain is given as X1(%) and a ratio of a depth d2 of a diffusion layer of the second rare earth element (R2) from the surface of the crystal grain relative to the diameter D of the crystal grain is given as X2(%).

Abstract: In order to provide dielectric ceramic composition having low IR defect rate and high relative dielectric constant even when the multilayer ceramic capacitor is made thinner, dielectric ceramic composition including a main component expressed by a composition formula {{Ba(1-x)Cax}O}A{Ti(1-y-z)ZryMgz}BO2 and subcomponents of Mn oxide, Y oxide, V oxide and Si oxide is provided. In the above formula, A, B, x, y and z are as follows: 0.995?A/B?1.020, 0.0001?x?0.07, preferably 0.001?x<0.05, 0.1?y?0.3 and 0.0005?z?0.01, preferably 0.003?z?0.01.

Abstract: A multilayer ceramic capacitor of the present invention includes dielectric layers and each of the dielectric layers has a main component containing barium titanate, a first auxiliary component composed of at least one kind selected from the group consisting of MgO, CaO, BaO, and SrO, a second auxiliary component containing a silicon oxide as a main component, a third auxiliary component composed of at least one kind selected from the group consisting of V2O5, MoO3, and WO3, a fourth auxiliary component composed of an oxide of at least one kind of first rare-earth element (R1) selected from the group consisting of Sc, Er, Tm, Yb, and Lu, and a fifth auxiliary component composed of CaZrO3 or a mixture (CaO+ZrO2) of CaO and ZrO2. Zr diffuses in crystal grains forming the dielectric layers and, in the crystal grains each having an average grain diameter, the depth of a diffusion layer of Zr is 10 to 35% relative to the diameter of the crystal grain.

Abstract: In a multilayer ceramic capacitor of the present invention, a first rare earth element (R1) and a second rare earth element (R2) respectively diffuse in each of crystal grains forming dielectric layers and, assuming that, in the crystal grains each having an average grain diameter D, a ratio of a depth d1 of a diffusion layer of the first rare earth element (R1) from the surface of the crystal grain relative to the diameter D of the crystal grain is given as X1(%) and a ratio of a depth d2 of a diffusion layer of the second rare earth element (R2) from the surface of the crystal grain relative to the diameter D of the crystal grain is given as X2(%), the depth d2 of the diffusion layer of the second rare earth element (R2) reaches deeper than the depth d1 of the diffusion layer of the first rare earth element (R1) and a relationship of X1=10 to 35% and X2>X1 (synonymous with d2>d1) is established.

Abstract: A ceramic electronic device having a dielectric layer, wherein the dielectric layer includes a main component containing a (Ba, Ca (Ti, Zr)O3 based material and a subcomponent containing an oxide of Si; and a content of the Si oxide is 0 to 0.4 wt % (note that 0 is not included) with respect to the entire dielectric layer; and preferably the dielectric layer has a segregation phase; and the segregation phase contains an oxide of Si and substantially not containing an oxide of Li; by which it is possible to provide a ceramic electronic device, such as a multilayer ceramic capacitor, having a low IR defect rate (initial insulation resistance defect rate), excellent high temperature load lifetime and high reliability.

Abstract: A dielectric ceramic composition contains components, with respective numbers of moles relative to 100 moles of barium titanate, including barium titanate, a first sub-component containing at least one oxide selected from a Mg oxide, a Ca oxide, a Ba oxide, and Sr oxide, a second sub-component containing an oxide containing 1 mol of Si atoms per mol, a third sub-component containing at least one oxide selected from a V oxide, a Mo oxide, and a W oxide, a fourth sub-component containing at least one R1 oxide (wherein R1 is at least one selected from Sc, Er, Tm, Yb, and Lu), a fifth sub-component containing at least one R2 oxide (wherein R2 is at least one selected from Y, Dy, Ho, Tb, Gd, and Eu), a sixth sub-component containing at least one selected from a Mn oxide and a Cr oxide, and a seventh sub-component containing at least one selected from calcium zirconate and a mixture of a Ca oxide and Zr oxide.

Abstract: In order to provide dielectric ceramic composition having low IR defect rate and high relative dielectric constant even when the multilayer ceramic capacitor is made thinner, dielectric ceramic composition including a main component expressed by a composition formula {{Ba(1-x)Cax}O}A{Ti(1-y-z)ZryMgz}BO2 and subcomponents of Mn oxide, Y oxide, V oxide and Si oxide is provided. In the above formula, A, B, x , y and z are as follows: 0.995?A/B?1.020, 0.0001?x?0.07, preferably 0.001?x?0.05, 0.1?y?0.3 and 0.0005?z?0.0 1, preferably 0.003?z?0.0 1.