Abstract: A semiconductor device includes a voltage generation circuit configured to generate a specific voltage; a first terminal configured to output the specific voltage; a second terminal configured to receive a temperature sensitive voltage; an analog/digital conversion circuit configured to convert the specific voltage and the temperature sensitive voltage to digital values; a storage unit configured to store the specific voltage and the temperature sensitive voltage; and a third terminal configured to transmit the specific voltage and the temperature sensitive voltage to an external semiconductor device.

Abstract: A semiconductor device includes a voltage generation circuit configured to generate a specific voltage; a first terminal configured to output the specific voltage; a second terminal configured to receive a temperature sensitive voltage; an analog/digital conversion circuit configured to convert the specific voltage and the temperature sensitive voltage to digital values; a storage unit configured to store the specific voltage and the temperature sensitive voltage; and a third terminal configured to transmit the specific voltage and the temperature sensitive voltage to an external semiconductor device.

Abstract: A semiconductor device has a semiconductor substrate in which first and second wells are formed. The substrate and wells are of the same conductivity type, but the second well has a higher impurity concentration than the first well. High-voltage MOS transistors are formed in the first well, and a low-voltage MOS transistor is formed in the second well. The high-voltage MOS transistors include a first transistor having a gate oxide layer with a first thickness and a second transistor having a gate oxide layer with a second thickness less than the first thickness. The low-voltage MOS transistor has a third gate oxide layer with a third thickness less than the first thickness. The second high-voltage MOS transistor provides efficient current conduction.

Abstract: A semiconductor device has a semiconductor substrate in which first and second wells are formed. The substrate and wells are of the same conductivity type, but the second well has a higher impurity concentration than the first well. High-voltage MOS transistors are formed in the first well, and a low-voltage MOS transistor is formed in the second well. The high-voltage MOS transistors include a first transistor having a gate oxide layer with a first thickness and a second transistor having a gate oxide layer with a second thickness less than the first thickness. The low-voltage MOS transistor has a third gate oxide layer with a third thickness less than the first thickness. The second high-voltage MOS transistor provides efficient current conduction.

Abstract: There is disclosed a semiconductor wafer-securing adhesive tape having a radiation-curable adhesive layer on one surface of a support film, wherein the support film is composed of a laminated film that comprises, as a center layer, a film comprising a styrene/ethylene/butene/styrene block copolymer, a ethylene/acrylic acid-type copolymer, and a polyamide/polyether copolymer in a specific ratio, and has a layer for adhesive coating laid, directly or through a bonding layer, on one surface of the center layer on the side where said radiation-curable adhesive layer is provided, and has a transfer-preventing layer laid, directly or through a bonding layer, on the other surface of the center layer. There is also disclosed a semiconductor wafer-securing adhesive tape wherein the center layer of said semiconductor wafer-securing adhesive tape has a film comprising said SEBS block copolymer or SEPS block copolymer, an amorphous poly .alpha.-olefin, and a polyamide/polyether copolymer, in a specific ratio.

Abstract: There is disclosed a surface-protection method during chemical etching of a plate material, which comprises sticking a radiation-curable adhesive tape onto the area of plate material where etching should not be effected, and after the radiation-curable adhesive layer is cured with irradiation of radiation, subjecting said plate material to a chemical etching treatment.

Abstract: There is provided a radiation-curable adhesive tape comprising a radiation-curable adhesive layer which is formed on a radiation transmitting-substrate. The radiation-curable adhesive layer is composed of an acrylic adhesive and radiation-curable compound having carbon-carbon double bonds. The radiation-curable tape can be used preferably in processing steps for the production of semiconductor wafer, ceramics and glass employing a direct picking-up system.

Abstract: There is a radiation-curable adhesive tape comprising a radiation-curable adhesive layer which is formed on a radiation transmitting-substrate. The radiation-curable adhesive layer is composed of an acrylic adhesive and radiation-curable compound having carbon-carbon double bonds. The radiation-curable tape can be used preferably in processing steps for the production of semiconductor wafer, ceramics and glass employing a direct picking-up system.

Abstract: There is provided a radiation-curable adhesive tape comprising a radiation-curable adhesive layer which is formed on a radiation transmitting substrate. The radiation-curable adhesive layer is composed of an acrylic adhesive and radiation-curable compound having carbon-carbon double bonds. The radiation-curable tape can be used preferably in processing steps for the production of semiconductor wafer, ceramics and glass employing a direct picking-up system.