Abstract: A trench gate power MOSFET (1) includes: an n?-type epitaxial layer (12); a p-type body region (20) formed in the vicinity of an upper surface of the n?-type epitaxial layer (12); a plurality of trenches (14) formed so as to reach the n?-type epitaxial layer (12) from an upper surface of the p-type body region (20); and gates (18) formed in the trenches (14). In some regions facing the p-type body region (20) in the n?-type epitaxial layer (12), p-type carrier extracting regions (26a, 26b, 26c) are formed. According to the trench gate power MOSFET (1), holes generated in a cell region can be effectively collected through the p-type carrier extracting regions (26a, 26b, 26c) so as to further increase a speed of the switching operation.

Abstract: A trench gate power MOSFET (1) of the present invention includes an n-type epitaxial layer (12), gates (18) and MOSFET cells. The gate (18) is disposed in a trench (14) formed in a surface of the n-type epitaxial layer (12). The MOSFET cell is formed on the surface of the n-type epitaxial layer (12) so as to be in contact with side surfaces of the trench (14). The trench gate power MOSFET (1) further includes a p-type isolation region (26) formed on the surface of the n-type epitaxial layer (12) and disposed between the MOSFET cells adjacent to each other in the extending direction of the trench (14) out of the MOSFET cells, and has a pn-junction diode formed between the p-type isolation region (26) and the n-type epitaxial layer (12). According to the trench gate power MOSFET (1) of the present invention, the increase of a diode leakage current with the elevation of temperature can be suppressed.

Abstract: MOS FETs are formed by a drain layer 101, a drift layer 102, P-type body areas 103, N+-type source areas 105, gate electrodes 108, a source electrode film 110, and a drain electrode film 111. In parallel to the MOS FETs, the drain layer 101, the drift layer 102, the P?-type diffusion area 109, and the source electrode film 110 form a diode. The source electrode film 110 and the P?-type diffusion area 109 form an Ohmic contact. The total amount of impurities, which function as P-type impurities in each P-type body area 103, is larger than the total amount of impurities, which function as P-type impurities in the P?-type diffusion area 109.

Abstract: A trench gate power MOSFET (1) includes: an n?-type epitaxial layer (12); a p-type body region (20) formed in the vicinity of an upper surface of the n?-type epitaxial layer (12); a plurality of trenches (14) formed so as to reach the n?-type epitaxial layer (12) from an upper surface of the p-type body region (20); and gates (18) formed in the trenches (14). In some regions facing the p-type body region (20) in the n?-type epitaxial layer (12), p-type carrier extracting regions (26a, 26b, 26c) are formed. According to the trench gate power MOSFET (1), holes generated in a cell region can be effectively collected through the p-type carrier extracting regions (26a, 26b, 26c) so as to further increase a speed of the switching operation.

Abstract: MOS FETs are formed by a drain layer 101, a drift layer 102, P-type body areas 103, N+-type source areas 105, gate electrodes 108, a source electrode film 110, and a drain electrode film 111. In parallel to the MOS FETs, the drain layer 101, the drift layer 102, the P?-type diffusion area 109, and the source electrode film 110 form a diode. The source electrode film 110 and the P?-type diffusion area 109 form an Ohmic contact. The total amount of impurities, which function as P-type impurities in each P-type body area 103, is larger than the total amount of impurities, which function as P-type impurities in the P?-type diffusion area 109.