Abstract: This disclosure provides a vapor-liquid reaction device including a vapor-liquid reaction chamber and a projecting member. The vapor-liquid reaction chamber holds a molten metal in a lower portion of an internal space of the vapor-liquid reaction chamber.

Abstract: This disclosure provides a vapor-liquid reaction device including a vapor-liquid reaction chamber and a projecting member. The vapor-liquid reaction chamber holds a molten metal in a lower portion of an internal space of the vapor-liquid reaction chamber.

Abstract: A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

Abstract: A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

Abstract: A chemical vapor deposition apparatus which comprises a susceptor for mounting a substrate thereon, a heater for heating the substrate, a feed gas introduction portion and a reaction gas exhaust portion, wherein a light transmitting ceramics plate held or reinforced by means of a supporting member is equipped between the heater and a mounting position of the substrate. A chemical vapor deposition apparatus that is capable of forming film stably for a long time without giving a negative influence on a quality of semiconductor film even in a case of chemical vapor deposition reaction employing a furiously corrosive gas with an elevated temperature for producing a gallium nitride compound semiconductor or so was realized.

Abstract: A film-forming device with a substrate rotating mechanism includes a susceptor 30 in the form of a circular disk; a base plate 6 positioned below the susceptor 30 and rotatably retaining the susceptor 30; a revolution generating section 5 rotating the susceptor 30 at the outer periphery of the susceptor 30; a plurality of substrate tray retaining sections 23 arranged on the susceptor 30; a plurality of annular substrate trays 20 rotatably supported in the corresponding substrate tray retaining sections 23; a rotation generating section 4 rotating the substrate trays 20; and a plurality of substrates W retained in the substrate trays 20. The substrates W are revolved by the rotation of the susceptor 30 and rotated by the rotation of the substrate trays 20 to apply a certain film-forming process. The substrates W are rotated and revolved by one or more revolution generating section 5 and the rotation generating section 4.

Abstract: A film-forming device with a substrate rotating mechanism, comprises: a susceptor 30 in the form of a circular disk; a base plate 6 positioned below the susceptor 30 and rotatably retaining the susceptor 30; a revolution generating section 5 rotating the susceptor 30 at the outer periphery of the susceptor 30; a plurality of substrate tray retaining sections 23 arranged on the susceptor 30; a plurality of annular substrate trays 20 rotatably supported in the corresponding substrate tray retaining sections 23; a rotation generating section 4 rotating the substrate trays 20; and a plurality of substrates W retained in the substrate trays 20. The substrates W are revolved by the rotation of the susceptor 30 and rotated by the rotation of the substrate trays 20 to apply a certain film-forming process. The substrates W are rotated and revolved by one or more revolution generating section 5 and the rotation generating section 4.

Abstract: An apparatus for growing a material at high temperature and employing a reaction gas. A reaction vessel is formed of a metal sidewall having outer and inner surfaces, the inner surface surrounding and defining a reaction chamber within the reaction vessel and which is generally vertically oriented. A cooling system maintains the metal sidewall of the reaction vessel at a temperature at which the metal does not produce contamination within the reaction chamber as a result of the high temperature operation, the reactant gases introduced into the reaction chamber or the product gases resultant from the reaction. A support mechanism includes a generally vertically oriented rod member which supports a susceptor, adapted to hold a wafer on which the material is to be grown, within the bottom part of the reaction chamber and, further, seals the reaction chamber.