Abstract: Disclosed is an electrolyte membrane which enables a fuel cell to have a high maximum output when used therein since it has high proton conductivity and high hydrogen gas impermeability. Also disclosed are a method for producing such an electrolyte membrane, and a solid polymer fuel cell using such an electrolyte membrane. A method for producing an electrolyte membrane including a step for impregnating a porous base with a solution containing a sulfonic acid group-containing vinyl monomer and then polymerizing the monomer is characterized in that 80% by mole or more of vinyl sulfonic acid having purity of 90% or more, and/or a salt thereof is contained as the sulfonic acid group-containing vinyl monomer, and the concentration of the vinyl sulfonic acid and/or a salt thereof in the solution is set at 35% by weight or more.

Abstract: A semiconductor light-emitting device including an insulating film, an optical resonator formed on the insulating film, and a p-electrode and an n-electrode which are disposed on the both sides of the optical resonator, respectively. The optical resonator includes a first semiconductor wire and a second semiconductor wire which are arranged in parallel with a space left therebetween, the space being narrower than emission wavelength, resonator mirrors disposed at the both ends of these semiconductor wires, and a plurality of semiconductor ultra-thin films which are interposed between the first semiconductor wire and the second semiconductor wire and are electrically connected with these semiconductor wires, the first semiconductor wire is electrically connected with the p-electrode, and the second semiconductor wire is electrically connected with the n-electrode, thereby enabling the semiconductor ultra-thin films to generate laser oscillation as a current is injected thereinto.

Abstract: It is intended to provide a reactive polymer-supported porous film that is capable of achieving sufficient adhesion between the electrode and the separator; reduced in internal resistance; and excellent in high rate characteristics, the porous film being useful as a battery separator which, after production of the battery, is not melted or broken under a high temperature and functions as a separator having a small heat shrinkage ratio as well as to provide a process for producing batteries using the reactive polymer-supported porous film.

Abstract: The present invention provides a method for coating a group 4 semiconductor surface composed mainly of a group 4 semiconductor elements and a process for producing group 4 semiconductor particles having a luminescent capability and semiconductor particles and a semiconductor element produced thereby.

Abstract: A light emitting device includes an active layer including atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the heteroatom D, the heteroatom D having a valence electron number differing by +1 or ?1 from that of the atom A, and the heteroatom Z having an electron configuration of a closed shell structure through charge compensation with the heteroatom D, and an n-electrode and a p-electrode adapted to supply a current to the active layer.

Abstract: A light-emitting device includes an active region, an n-type region, a p-type region, an n-electrode and a p-electrode. The active region is formed from a semiconductor material. The semiconductor material has a tetrahedral structure and includes an impurity. The impurity creates at least two energy levels connected with the allowed transition within a band gap of the semiconductor material. The n-type and p-type regions in contact with the active region are disposed between the n-type and p-type regions. An excitation element is configured to inject an electron from the n-type region and inject a hole from the p-type region so as to generate an electron-hole pair in the active region. The active region has a thickness no less than an atomic distance of the semiconductor and no more than 5 nm.

Abstract: A light emitting device includes an active layer including atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the heteroatom D, the heteroatom D having a valence electron number differing by +1 or ?1 from that of the atom A, and the heteroatom Z having an electron configuration of a closed shell structure through charge compensation with the heteroatom D, and an n-electrode and a p-electrode adapted to supply a current to the active layer.

Abstract: A light emitting device includes an active layer including atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the heteroatom D, the heteroatom D having a valence electron number differing by +1 or ?1 from that of the atom A, and the heteroatom Z having an electron configuration of a closed shell structure through charge compensation with the heteroatom D, and an n-electrode and a p-electrode adapted to supply a current to the active layer.

Abstract: A semiconductor device includes: an n-type MOS transistor and a p-type MOS transistor connected in series; and a first gate extending via an insulating film above a channel of the n-type MOS transistor and a channel of the p-type MOS transistor. By providing light to the first gate, electrons and holes are generated, at least one of either of the electrons and holes passes through above the channel of the n-type MOS transistor and at least one of the either of the electrons and holes passes through above the channel of the p-type MOS transistor, whereby the n-type MOS transistor and the p-type MOS transistor are switched.

Abstract: A switch control apparatus for controlling a switch is provided, the switch control apparatus including: a sequence memory for recording a sequence pattern, which includes open/close instruction data which instruct the switch thereon to open/close; an address control module for sequentially retrieving each of the open/close instruction data of the sequence pattern from the sequence memory; and an open/close state storage module for storing an open/close state instructed by changed open/close instruction data, when the open/close instruction data retrieved by the address control module is changed, wherein the open/close state stored by the open/close state storage module is provided to the switch such that the switch opens or closes in response to the open/close state.

Abstract: An optical device has a photoelectric conversion layer that is formed of a tetrahedral bonded semiconductor, including germanium atoms as main components. A substrate has a lattice constant that is smaller than that of germanium. The plane direction of the substrate is a {111} face. A semiconductor lattice extends in the direction of a <111> axis vertical to the face of the substrate.

Abstract: A semiconductor device provided with a filled tetrahedral semiconductor is formed by introducing impurity atoms S for substituting the component atoms of sites of lattice points and impurity atoms I to be inserted into interstitial sites of a host semiconductor where component atoms are bonded to form a tetrahedral bonding structure. Such a semiconductor device is made to show a high mobility level and a high current drive force as a semiconductor substance where impurity atoms S are made to have a valance electron agreeing with that of the component atoms of the host semiconductor as a result of charge transfer between impurity atoms S and impurity atoms I and impurity atoms I are bonded in a state of showing an electronic arrangement of a closed shell structure is used as channel material.

Abstract: An optical receiving device has a photoelectric conversion layer including a matrix semiconductor containing silicon atoms as a main component, an n-type dopant D substituted for the silicon atom in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the n-type dopant D, in which the heteroatom Z has an electron configuration of a closed shell structure through charge compensation with the dopant D.

Abstract: A light emitting device includes an active layer including atoms A of a matrix semiconductor having a tetrahedral structure, a heteroatom D substituted for the atom A in a lattice site, and a heteroatom Z inserted into an interstitial site positioned closest to the heteroatom D, the heteroatom D having a valence electron number differing by +1 or ?1 from that of the atom A, and the heteroatom Z having an electron configuration of a closed shell structure through charge compensation with the heteroatom D, and an n-electrode and a p-electrode adapted to supply a current to the active layer.

Abstract: A semiconductor light-emitting material includes a semiconductor substance including a matrix semiconductor whose constituent atoms are bonded to form a tetrahedral structure, an impurity atom S substituted for an atom in a lattice site of the matrix semiconductor, and an impurity atom I inserted in a interstitial site of the matrix semiconductor, the impurity atom S and the impurity atom I being bonded through charge transfer therebetween in a state that the impurity atom S has an electric charge coincident with that of the constituent atom of the matrix semiconductor and the impurity atom I has an electron configuration of a closed shell structure, in which the semiconductor substance is stretched in a direction of a bond forming the tetrahedral structure.

Abstract: There is provided an organic EL element including an anode, a cathode, and an organic layer, wherein the cathode includes a protective conductor layer which faces the organic layer, a main conductor layer which is interposed between the protective conductor layer and the organic layer, and a barrier layer which is interposed between the protective conductor layer and the main conductor layer and made of an insulator or a semiconductor.

Abstract: It is an object to properly control timing of opening and closing a switch by a circuit of simple constitution. A switch control apparatus for controlling a switch is provided, the switch control apparatus including a sequence memory for recording a sequence pattern includes open/close instruction data which instruct to open/close the switch thereon; an address control module for sequentially retrieving each of the open/close instruction data of the sequence pattern from the sequence memory; and an open/close state storage module for storing an open/close state instructed by changed open/close instruction data when the open/close instruction data retrieved by the address control module is changed, wherein the switch opens or closes in response to the open/close state stored by the open/close state storage module.

Abstract: The present invention provides a method for coating a group 4 semiconductor surface composed mainly of a group 4 semiconductor elements and a process for producing group 4 semiconductor particles having a luminescent capability and semiconductor particles and a semiconductor element produced thereby.

Abstract: A matched filter requiring no high-speed processor and which consumes less power is disclosed. Partial filters 301–30N obtained by dividing number of matched filter taps by N are provided with a controller 341 for controlling which partial filters are enabled. The controller 341 is supplied with maximum amount of delay of an input signal and with symbol timing. On the basis of the maximum amount of delay, the controller 341 enables only the minimum number of partial filters 301–30n that are capable of executing an amount of computation that is required in one symbol period. The enabled partial filters are used multiple number of times per symbol period and the output, each time, integrated sample by sample. Since the disabled partial filters will not operate, it is possible to reduce power consumption and computation time.

Abstract: There is provided an organic EL element including an anode, a cathode, and an organic layer, wherein the cathode includes a protective conductor layer which faces the organic layer, a main conductor layer which is interposed between the protective conductor layer and the organic layer, and a barrier layer which is interposed between the protective conductor layer and the main conductor layer and made of an insulator or a semiconductor.