Abstract: Provided is a method of evaluating carbon concentration of a silicon sample, which includes: forming an oxide film on at least a part of a surface of an evaluation-target silicon sample; irradiating a particle beam onto a surface of the oxide film; irradiating excitation light having energy larger than a band gap of silicon onto the surface of the oxide film, onto which the particle beam has been irradiated; measuring intensity of photoluminescence emitted from the evaluation-target silicon sample irradiated with the excitation and evaluating carbon concentration of the evaluation-target silicon sample on the basis of the measured intensity of photoluminescence, wherein the photoluminescence is band-edge luminescence of silicon.

Abstract: Provided is a method of measuring a carbon concentration of a silicon sample, the method including introducing hydrogen atoms into a measurement-target silicon sample; subjecting the measurement-target silicon sample into which hydrogen atoms have been introduced to evaluation by an evaluation method of evaluating a trap level in a silicon band gap, without an electron beam irradiation treatment; and determining the carbon concentration of the measurement-target silicon sample on the basis of an evaluation result at least one trap level selected from the group consisting of Ec-0.10 eV, Ec-0.13 eV and Ec-0.15 eV, among the evaluation results obtained by the evaluation, wherein the determined carbon concentration is lower than 1.0E+16 atoms/cm3.

Abstract: The method is a method of evaluating a manufacturing process of a silicon material, wherein the manufacturing process includes a process that uses a member containing a carbon-containing sintered body, and the method of evaluating the manufacturing process of a silicon material includes performing DLTS measurement on a silicon material manufactured in the manufacturing process, and estimating a heavy metal contamination source of a silicon material manufactured in the manufacturing process with an indicator in the form of presence/absence of detection of a peak of a carbon-related level and presence/absence of detection of a peak of a heavy metal-related level in a DLTS spectrum obtained by the DLTS measurement.

Abstract: Provided is a method of evaluating a semiconductor substrate, which evaluates quality of the semiconductor substrate by a photoluminescence measurement, wherein the evaluation by the photoluminescence measurement includes, after subjecting a surface of an evaluation-target semiconductor substrate to a pretreatment, irradiating the surface with excitation light, and then detecting emission obtained from the surface having been irradiated with the excitation light, and the pretreatment includes subjecting the surface of the evaluation-target semiconductor substrate to be irradiated with the excitation light to an oxide film formation treatment and charging the surface of the formed oxide film by corona discharge.

Abstract: Provided is a method of evaluating carbon concentration of a silicon sample, which includes: forming an oxide film on at least a part of a surface of an evaluation-target silicon sample; irradiating a particle beam onto a surface of the oxide film; irradiating excitation light having energy larger than a band gap of silicon onto the surface of the oxide film, onto which the particle beam has been irradiated; measuring intensity of photoluminescence emitted from the evaluation-target silicon sample irradiated with the excitation and evaluating carbon concentration of the evaluation-target silicon sample on the basis of the measured intensity of photoluminescence, wherein the photoluminescence is band-edge luminescence of silicon.

Abstract: Provided is a method of measuring a carbon concentration of a silicon sample, the method including introducing hydrogen atoms into a measurement-target silicon sample; subjecting the measurement-target silicon sample into which hydrogen atoms have been introduced to evaluation by an evaluation method of evaluating a trap level in a silicon band gap, without an electron beam irradiation treatment; and determining the carbon concentration of the measurement-target silicon sample on the basis of an evaluation result at least one trap level selected from the group consisting of Ec-0.10 eV, Ec-0.13 eV and Ec-0.15 eV, among the evaluation results obtained by the evaluation, wherein the determined carbon concentration is lower than 1.0E+16 atoms/cm3.

Abstract: The method is a method of evaluating a manufacturing process of a silicon material, wherein the manufacturing process includes a process that uses a member containing a carbon-containing sintered body, and the method of evaluating the manufacturing process of a silicon material includes performing DLTS measurement on a silicon material manufactured in the manufacturing process, and estimating a heavy metal contamination source of a silicon material manufactured in the manufacturing process with an indicator in the form of presence/absence of detection of a peak of a carbon-related level and presence/absence of detection of a peak of a heavy metal-related level in a DLTS spectrum obtained by the DLTS measurement.

Abstract: Provided is a method of evaluating a semiconductor substrate, which evaluates quality of the semiconductor substrate by a photoluminescence measurement, wherein the evaluation by the photoluminescence measurement includes, after subjecting a surface of an evaluation-target semiconductor substrate to a pretreatment, irradiating the surface with excitation light, and then detecting emission obtained from the surface having been irradiated with the excitation light, and the pretreatment includes subjecting the surface of the evaluation-target semiconductor substrate to be irradiated with the excitation light to an oxide film formation treatment and charging the surface of the formed oxide film by corona discharge.

Abstract: An aspect of the present invention relates to a method of evaluating metal contamination in a semiconductor wafer that has been subjected to a heat treatment, which comprises obtaining analysis values by analyzing a plurality of analysis points on a surface of the semiconductor wafer by a first analysis method or a second analysis method, wherein in the first analysis method, analysis values employed in evaluation decrease as an amount of contamination by a metal element that is to be evaluated increases, and in the second analysis method, analysis values employed in evaluation increase as an amount of contamination by a metal element that is to be evaluated increases, and wherein determination of presence or absence of localized contamination by the metal element that is to be evaluated is made by evaluating the analysis values based on the normal value specified by a probability distribution function.

Abstract: An aspect of the present invention relates to a method of evaluating metal contamination in a semiconductor wafer that has been subjected to a heat treatment, which comprises obtaining analysis values by analyzing a plurality of analysis points on a surface of the semiconductor wafer by a first analysis method or a second analysis method, wherein in the first analysis method, analysis values employed in evaluation decrease as an amount of contamination by a metal element that is to be evaluated increases, and in the second analysis method, analysis values employed in evaluation increase as an amount of contamination by a metal element that is to be evaluated increases, and wherein determination of presence or absence of localized contamination by the metal element that is to be evaluated is made by evaluating the analysis values based on the normal value specified by a probability distribution function.