Patents by Inventor Kazutaka Kuriki

Kazutaka Kuriki has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Power storage device
    Patent number: 10128498
    Abstract: A power storage device which has improved performance such as higher discharge capacity and in which deterioration due to peeling or the like of an active material layer is less likely to be caused is provided. In an electrode for the power storage device, phosphorus-doped amorphous silicon is used for the active material layer over a current collector as a material that can be alloyed with lithium, and niobium oxide is deposited over the active material layer as a layer containing niobium. Accordingly, the capacity of the power storage device can be increased and the cycle characteristics and the charge-discharge efficiency can be improved.
    Type: Grant
    Filed: May 26, 2016
    Date of Patent: November 13, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazutaka Kuriki, Nobuhiro Inoue, Kiyofumi Ogino
  • Method for forming silicon film and method for manufacturing power storage device
    Patent number: 10072331
    Abstract: A formation method of a silicon film which contributes to improvements in cycle characteristics and an increase in charge/discharge capacity and can be used as an active material layer is provided. In addition, a manufacturing method of a power storage device including the silicon film is provided. The formation method is as follows. A crystalline silicon film is formed over a conductive layer by an LPCVD method. The supply of a source gas is stopped and heat treatment is performed on the silicon film while the source gas is exhausted. The silicon film is grown to have whisker-like portions by an LPCVD method while the source gas is supplied into the reaction space. A power storage device is manufactured using, as an active material layer included in a negative electrode, the silicon film grown to have whisker-like portions.
    Type: Grant
    Filed: June 29, 2012
    Date of Patent: September 11, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Toshihiko Takeuchi, Kazutaka Kuriki, Makoto Ishikawa
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTRING SEMICONDUCTOR DEVICE
    Publication number: 20180233588
    Abstract: Provided is a semiconductor device having favorable reliability.
    Type: Application
    Filed: April 9, 2018
    Publication date: August 16, 2018
    Inventors: Shunpei Yamazaki, Kazutaka Kuriki, Yuji Egi, Hiromi Sawai, Yusuke Nonaka, Noritaka Ishihara, Daisuke Matsubayashi
  • Negative Electrode For Power Storage Device, Method For Forming The Same, And Power Storage Device
    Publication number: 20180183037
    Abstract: An object is to suppress electrochemical decomposition of an electrolyte solution and the like at a negative electrode in a lithium ion battery or a lithium ion capacitor; thus, irreversible capacity is reduced, cycle performance is improved, or operating temperature range is extended. A negative electrode for a power storage device including a negative electrode current collector, a negative electrode active material layer which is over the negative electrode current collector and includes a plurality of particles of a negative electrode active material, and a film covering pan of the negative electrode active material. The film has an insulating property and lithium ion conductivity.
    Type: Application
    Filed: February 16, 2018
    Publication date: June 28, 2018
    Inventors: Nobuhiro Inoue, Sachiko Kataniwa, Kazutaka Kuriki, Junpei Momo
  • Manufacturing method of power storage device
    Patent number: 9960225
    Abstract: It is an object to improve performance of a power storage device, such as cycle characteristics. A power storage device includes a current collector and a crystalline semiconductor layer including a whisker, which is formed on and in close contact with the current collector. Separation of the crystalline semiconductor layer is suppressed by an increase of adhesion, whereby cycle characteristics in which a specific capacity of a tenth cycle number with respect to a first cycle number is greater than or equal to 90% is realized. In addition, cycle characteristics in which a specific capacity of a hundredth cycle number with respect to a first cycle number is greater than or equal to 70% is realized.
    Type: Grant
    Filed: June 21, 2011
    Date of Patent: May 1, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazutaka Kuriki, Michiko Konishi, Asami Tadokoro, Yasunori Yoshida, Kiyofumi Ogino, Toshihiko Takeuchi
  • Semiconductor device and method for manufacturing semiconductor device
    Patent number: 9947777
    Abstract: Provided is a semiconductor device having favorable reliability.
    Type: Grant
    Filed: April 20, 2017
    Date of Patent: April 17, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Kazutaka Kuriki, Yuji Egi, Hiromi Sawai, Yusuke Nonaka, Noritaka Ishihara, Daisuke Matsubayashi
  • Power storage device
    Patent number: 9911973
    Abstract: A power storage device which has high charge/discharge capacity and less deterioration in battery characteristics due to charge/discharge and can perform charge/discharge at high speed is provided. A power storage device includes a negative electrode. The negative electrode includes a current collector and an active material layer provided over the current collector. The active material layer includes a plurality of protrusions protruding from the current collector and a graphene provided over the plurality of protrusions. Axes of the plurality of protrusions are oriented in the same direction. A common portion may be provided between the current collector and the plurality of protrusions.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: March 6, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Ryota Tajima, Shunpei Yamazaki, Teppei Oguni, Takeshi Osada, Shinya Sasagawa, Kazutaka Kuriki
  • Negative electrode for power storage device, method for forming the same, and power storage device
    Patent number: 9899660
    Abstract: An object is to suppress electrochemical decomposition of an electrolyte solution and the like at a negative electrode in a lithium ion battery or a lithium ion capacitor; thus, irreversible capacity is reduced, cycle performance is improved, or operating temperature range is extended. A negative electrode for a power storage device including a negative electrode current collector, a negative electrode active material layer which is over the negative electrode current collector and includes a plurality of particles of a negative electrode active material, and a film covering part of the negative electrode active material. The film has an insulating property and lithium ion conductivity.
    Type: Grant
    Filed: June 13, 2017
    Date of Patent: February 20, 2018
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Nobuhiro Inoue, Sachiko Kataniwa, Kazutaka Kuriki, Junpei Momo
  • POWER STORAGE ELEMENT, MANUFACTURING METHOD THEREOF, AND POWER STORAGE DEVICE
    Publication number: 20180012915
    Abstract: Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane and can be formed through a simple process. The power storage element further includes a positive electrode active material layer on the positive electrode current collector layer; a negative electrode active material layer on the negative electrode current collector layer; and a solid electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer. The positive electrode active material layer and the negative electrode active material layer are formed by oxidation treatment.
    Type: Application
    Filed: August 15, 2017
    Publication date: January 11, 2018
    Inventors: Kazutaka KURIKI, Ryota TAJIMA, Tamae MORIWAKA
  • MATERIAL FOR ELECTRODE OF POWER STORAGE DEVICE, POWER STORAGE DEVICE, AND ELECTRICAL APPLIANCE
    Publication number: 20180005761
    Abstract: To improve the reliability of a power storage device. A granular active material including carbon is used, and a net-like structure is formed on part of a surface of the granular active material. In the net-like structure, a carbon atom included in the granular active material is bonded to a silicon atom or a metal atom through an oxygen atom. Formation of the net-like structure suppresses reductive decomposition of an electrolyte solution, leading to a reduction in irreversible capacity. A power storage device using the above active material has high cycle performance and high reliability.
    Type: Application
    Filed: August 24, 2017
    Publication date: January 4, 2018
    Inventors: Nobuhiro INOUE, Ryota TAJIMA, Tamae MORIWAKA, Junpei MOMO, Teppei OGUNI, Kai KIMURA, Kazutaka KURIKI, Shunpei YAMAZAKI
  • Electrode, power storage device, electronic device, and vehicle
    Patent number: 9852850
    Abstract: A power storage device with high capacity is provided. Alternatively, a power storage device with excellent cycle characteristics is provided. Alternatively, a power storage device with high charge and discharge efficiency is provided. Alternatively, a power storage device with a long lifetime is provided. A negative electrode active material is provided over a negative electrode current collector, and the negative electrode active material layer is formed in such a manner that first layers and second layers are alternately stacked. The first layer includes at least an element selected from Si, Mg, Ca, Ga, Al, Ge, Sn, Pb, Sb, Bi, Ag, Zn, Cd, As, Hg, and In. The second layer includes oxygen and the same element as the one included in the first layer.
    Type: Grant
    Filed: July 17, 2015
    Date of Patent: December 26, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Nobuhiro Inoue, Ryota Tajima, Kazutaka Kuriki, Mitsuhiro Ichijo, Yoshikazu Hiura, Mai Sugikawa
  • Method for manufacturing SOI substrate
    Patent number: 9837300
    Abstract: A semiconductor substrate and a base substrate are prepared; an oxide film is formed over the semiconductor substrate; the semiconductor substrate is irradiated with accelerated ions through the oxide film to form a separation layer at a predetermined depth from a surface of the semiconductor substrate; a nitrogen-containing layer is formed over the oxide film after the ion irradiation; the semiconductor substrate and the base substrate are disposed opposite to each other to bond a surface of the nitrogen-containing layer and a surface of the base substrate to each other; and the semiconductor substrate is heated to cause separation along the separation layer, thereby forming a single crystal semiconductor layer over the base substrate with the oxide film and the nitrogen-containing layer interposed therebetween.
    Type: Grant
    Filed: May 9, 2012
    Date of Patent: December 5, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Tetsuya Kakehata, Kazutaka Kuriki
  • ELECTRODE, POWER STORAGE DEVICE, AND ELECTRONIC DEVICE
    Publication number: 20170338491
    Abstract: A power storage device with high capacity or high energy density is provided. A highly reliable power storage device is provided. A long-life power storage device is provided. An electrode includes an active material, a first binder, and a second binder. The specific surface area of the active material is S [m2/g]. The weight of the active material, the weight of the first binder, and the weight of the second binder are a, b, and c, respectively. The solution of {(b+c)/(a+b+c)}×100÷S is 0.3 or more. The electrode includes a first film in contact with the active material. The first film preferably includes a region in contact with the active material. The first film preferably includes a region with a thickness of 2 nm or more and 20 nm or less. The first film contains a water-soluble polymer.
    Type: Application
    Filed: August 4, 2017
    Publication date: November 23, 2017
    Inventors: Kai KIMURA, Kazutaka KURIKI, Teppei OGUNI, Aya UCHIDA (Forme: HITOTSUYANAGI)
  • Power storage device electrode, method for forming the same, power storage device, and electrical device
    Patent number: 9806334
    Abstract: Irreversible capacity which causes a decrease in the charge and discharge capacity of a power storage device is reduced, and electrochemical decomposition of an electrolyte solution and the like on a surface of an electrode is inhibited. Further, the cycle characteristics of the power storage device is improved by reducing or inhibiting a decomposition reaction of the electrolyte solution and the like occurring as a side reaction in repeated charging and discharging of the power storage device. A power storage device electrode includes a current collector and an active material layer that is over the current collector and includes a binder and an active material. A coating film is provided on at least part of a surface of the active material. The coating film is spongy.
    Type: Grant
    Filed: October 23, 2013
    Date of Patent: October 31, 2017
    Assignee: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
    Inventors: Kazutaka Kuriki, Kai Kimura, Nobuhiro Inoue, Ryota Tajima, Tamae Moriwaka, Kiyofumi Ogino
  • POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE SAME
    Publication number: 20170309905
    Abstract: Provided is a method for manufacturing a power storage device in which a crystalline silicon layer including a whisker-like crystalline silicon region is formed as an active material layer over a current collector by a low-pressure CVD method in which heating is performed using a deposition gas containing silicon. The power storage device includes the current collector, a mixed layer formed over the current collector, and the crystalline silicon layer functioning as the active material layer formed over the mixed layer. The crystalline silicon layer includes a crystalline silicon region and a whisker-like crystalline silicon region including a plurality of protrusions which project over the crystalline silicon region.
    Type: Application
    Filed: June 16, 2017
    Publication date: October 26, 2017
    Inventors: Kazutaka KURIKI, Mikio YUKAWA, Yuji ASANO
  • SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
    Publication number: 20170309732
    Abstract: Provided is a semiconductor device having favorable reliability.
    Type: Application
    Filed: April 20, 2017
    Publication date: October 26, 2017
    Inventors: Shunpei YAMAZAKI, Kazutaka KURIKI, Yuji EGI, Hiromi SAWAI, Yusuke NONAKA, Noritaka ISHIHARA, Daisuke MATSUBAYASHI
  • Power storage device and method for manufacturing electrode
    Patent number: 9799461
    Abstract: As an electrode for a power storage device, an electrode including a current collector, a first active material layer over the current collector, and a second active material layer that is over the first active material layer and includes a particle containing niobium oxide and a granular active material is used, whereby the charge-discharge cycle characteristics and rate characteristics of the power storage device can be improved. Moreover, contact between the granular active material and the particle containing niobium oxide makes the granular active material physically fixed; accordingly, deterioration due to expansion and contraction of the active material which occur along with charge and discharge of the power storage device, such as powdering of the active material or its separation from the current collector, can be suppressed.
    Type: Grant
    Filed: August 28, 2012
    Date of Patent: October 24, 2017
    Assignee: Semiconductor Energy Laboratory Co., LTD.
    Inventors: Kosei Noda, Kazutaka Kuriki, Nobuhiro Inoue
  • NEGATIVE ELECTRODE FOR POWER STORAGE DEVICE, METHOD FOR FORMING THE SAME, AND POWER STORAGE DEVICE
    Publication number: 20170288205
    Abstract: An object is to suppress electrochemical decomposition of an electrolyte solution and the like at a negative electrode in a lithium ion battery or a lithium ion capacitor; thus, irreversible capacity is reduced, cycle performance is improved, or operating temperature range is extended. A negative electrode for a power storage device including a negative electrode current collector, a negative electrode active material layer which is over the negative electrode current collector and includes a plurality of particles of a negative electrode active material, and a film covering part of the negative electrode active material. The film has an insulating property and lithium ion conductivity.
    Type: Application
    Filed: June 13, 2017
    Publication date: October 5, 2017
    Inventors: Nobuhiro INOUE, Sachiko KATANIWA, Kazutaka KURIKI, Junpei MOMO
  • Material for electrode of power storage device, power storage device, and electrical appliance
    Patent number: 9754728
    Abstract: To improve the reliability of a power storage device. A granular active material including carbon is used, and a net-like structure is formed on part of a surface of the granular active material. In the net-like structure, a carbon atom included in the granular active material is bonded to a silicon atom or a metal atom through an oxygen atom. Formation of the net-like structure suppresses reductive decomposition of an electrolyte solution, leading to a reduction in irreversible capacity. A power storage device using the above active material has high cycle performance and high reliability.
    Type: Grant
    Filed: September 20, 2013
    Date of Patent: September 5, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Nobuhiro Inoue, Ryota Tajima, Tamae Moriwaka, Junpei Momo, Teppei Oguni, Kai Kimura, Kazutaka Kuriki, Shunpei Yamazaki
  • Power storage element, manufacturing method thereof, and power storage device
    Patent number: 9748287
    Abstract: Disclosed is a power storage element including a positive electrode current collector layer and a negative electrode current collector layer which are arranged on the same plane and can be formed through a simple process. The power storage element further includes a positive electrode active material layer on the positive electrode current collector layer; a negative electrode active material layer on the negative electrode current collector layer; and a solid electrolyte layer in contact with at least the positive electrode active material layer and the negative electrode active material layer. The positive electrode active material layer and the negative electrode active material layer are formed by oxidation treatment.
    Type: Grant
    Filed: November 30, 2016
    Date of Patent: August 29, 2017
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Kazutaka Kuriki, Ryota Tajima, Tamae Moriwaka