Abstract: A load lock chamber (12) is connected in a front stage of a film forming chamber (11) through a damper and the like. A pipe to which a N2 gas and aeriform or fog-like H2O are supplied is connected to the load lock chamber (12). The pipe is led from a vaporizer (13). Inside the load lock chamber (12), a carrying section 15 on which a wafer (20) is placed is provided, whereas outside the load lock chamber (12), a cooler (14) cooling a carrying section (15) by means of liquid nitrogen is arranged. The temperature of the carrying section 15 is held at, for example, ?4° C.

Abstract: A load lock chamber (12) is connected in a front stage of a film forming chamber (11) through a damper and the like. A pipe to which a N2 gas and aeriform or fog-like H2O are supplied is connected to the load lock chamber (12). The pipe is led from a vaporizer (13). Inside the load lock chamber (12), a carrying section 15 on which a wafer (20) is placed is provided, whereas outside the load lock chamber (12), a cooler (14) cooling a carrying section (15) by means of liquid nitrogen is arranged. The temperature of the carrying section 15 is held at, for example, ?4° C.

Abstract: There are provided the steps of forming a first conductive layer, an oxide dielectric layer, and a second conductive layer sequentially over a first insulating layer formed over a semiconductor substrate, forming a capacitor consisting of an upper electrode, a dielectric layer, and a lower electrode made by patterning the second conductive layer, the oxide dielectric layer, and the first conductive layer, forming a second insulating layer over the capacitor and the first insulating layer, forming a hole in the second insulating layer on the upper electrode, and supplying an activated oxygen to the capacitor via the hole in a state that the semiconductor substrate is heated.

Abstract: There are provided the steps of forming a first conductive layer, an oxide dielectric layer, and a second conductive layer sequentially over a first insulating layer formed over a semiconductor substrate, forming a capacitor consisting of an upper electrode, a dielectric layer, and a lower electrode made by patterning the second conductive layer, the oxide dielectric layer, and the first conductive layer, forming a second insulating layer over the capacitor and the first insulating layer, forming a hole in the second insulating layer on the upper electrode, and supplying an activated oxygen to the capacitor via the hole in a state that the semiconductor substrate is heated.

Abstract: There is provided a semiconductor device which comprises capacitors having lower electrodes, which are formed of platinum on a first insulating film over a semiconductor substrate to have a contact region, and upper electrodes formed on the lower electrodes via a dielectric film respectively, a second insulating film formed on the capacitors, a hole formed in the second insulating film on the contact region of the lower electrode, and a wiring constructed by forming an underlying conductive film, a minimum thickness of which is thicker than 30 nm at a bottom of the hole, and an aluminum film sequentially, and formed from an inside of the hole to an upper surface of the second insulating film.