Abstract: A binder resin for electrodes consisting of a polyimide-based resin having a melting point of 300° C. or lower, an electrode mixture paste including the binder resin for electrodes, an electrode active material, and a solvent; and an electrode including an electrode mixture layer including the binder resin for electrodes and an electrode active material; and a method for producing the electrode.

Abstract: A flexible electronic device containing a polyimide film exhibiting excellent C-V characteristics. The polyimide film is a film that shows a maximum gradient of 0.005/V or more in a capacitance-voltage measurement of a laminate in which a polyimide film having a film thickness of 0.75 ?m is formed on a silicon wafer having a resistance value of 4 ?cm; the maximum gradient meaning a maximum value of an absolute value of a gradient in a normalized capacity-voltage curve during a third scan of forward direction scans; a capacity-voltage curve being measured by applying a direct current voltage is to the polyimide film with respect to the silicon wafer between a lowest voltage V1 and a highest voltage V2, and measuring capacitance while the direct current voltage is scanned in a forward direction and scanned in a negative direction; the normalized capacity-voltage curve being normalized so that the capacity at the lowest voltage V1 is 1.

Abstract: A polyimide-based binder for power storage device having a repeated breaking energy retention ratio of 70% or more. The use of the binder enables improvement of a power storage device having a high capacity.

Abstract: A flexible electronic device containing a polyimide film exhibiting excellent C-V characteristics. The polyimide film is a film that shows a maximum gradient of 0.005N or more in a capacitance-voltage measurement of a laminate in which a polyimide film having a film thickness of 0.75 ?m is formed on a silicon wafer having a resistance value of 4 ?cm; the maximum gradient meaning a maximum value of an absolute value of a gradient in a normalized capacity-voltage curve during a third scan of forward direction scans; a capacity-voltage curve being measured by applying a direct current voltage is to the polyimide film with respect to the silicon wafer between a lowest voltage V1 and a highest voltage V2, and measuring capacitance while the direct current voltage is scanned in a forward direction and scanned in a negative direction; the normalized capacity-voltage curve is being normalized so that the capacity at the lowest voltage V1 is 1.

Abstract: A polyimide precursor resin composition for forming a flexible device substrate, including a polyamic acid having a structure obtained from a tetracarboxylic acid component including at least one of 3,3?,4,4?-biphenyltetracarboxylic dianhydride and pyromellitic dianhydride, a diamine component including at least one of paraphenylene diamine and 4,4?-diaminodiphenyl ether, and a carboxylic acid monoanhydride, the polyamic acid satisfying equations (1) and (2) below: 0.97?X/Y<1.00??Equation (1) 0.5?(Z/2)/(Y?X)?1.05??Equation (2) in which X represents a number of moles of tetracarboxylic acid component, Y represents a number of moles of diamine component, and Z represents a number of moles of the carboxylic acid monoanhydride.

Abstract: A binder resin for electrodes consisting of a polyimide-based resin having a melting point of 300° C. or lower, an electrode mixture paste including the binder resin for electrodes, an electrode active material, and a solvent; and an electrode including an electrode mixture layer including the binder resin for electrodes and an electrode active material; and a method for producing the electrode.

Abstract: Disclosed is a method for producing a polyimide laminate, the method including the steps of applying a polyimide precursor solution onto a substrate and heating the polyimide precursor solution, to thereby form a polyimide film layer on the substrate. The substrate is any plate selected from a glass plate, a metal plate, and a ceramic plate. The heating step includes irradiation with far infrared rays using an infrared heater that generates a maximum radiant energy at an infrared wavelength of 3.5 to 6 ?m. The highest heating temperature is preferably 350 to 550° C. The time required to increase the temperature from 180 to 280° C. during a temperature-increasing process is preferably 2 minutes or longer.

Abstract: In an embodiment, a film retainer 200 includes a base member 210 fixed to a tenter chain and a pin plate 220 supported on the base member 210 to be movable in the movement direction of the tenter chain. The pin plate 220 is provided with a plurality of protruding pins 230 that are stuck into the film for holding the film. The film retainer for a tenter apparatus is capable of suppressing a bowing phenomenon without significant modifications to an existing manufacture facility and being applicable under arbitrary manufacture conditions.

Abstract: This reference voltage generator device detects a voltage corresponding to an energy gap of a semiconductor, or a voltage of a value close thereto, or a voltage based on an energy level of a semiconductor, and generates the detected voltage as a reference voltage. The reference voltage is generated by detecting a difference of threshold voltages of first and second insulated gate field-effect transistors (IGFETs). Gate electrodes of the first and second IGFETs are formed on gate insulating films which are formed on different surface areas of an identical semiconductor substrate under substantially the same conditions. The gate electrodes of the first and second IGFETs are respectively made of two semiconductors which are selected from among a semiconductor of a first conductivity type, a semiconductor of a second conductivity type and an intrinsic semiconductor made of an identical semiconductor material, and which have Fermi energy levels of values different from each other.

Abstract: A MIS capacitance element formed in a semiconductor substrate of p-(or n-) conductivity type comprises an n- (or p-) type well region formed in one principal surface of the semiconductor substrate and a polycrystalline region formed on the surface of the well region through a gate insulator layer. A polar voltage is applied between the well region and the polycrystalline layer so that the well region is forward biased and no carrier channel region is formed in the surface of the well region. The MIS element is particularly suited for use in a complementary MIS IC and provides almost no voltage or field dependency of the capacitance.