Abstract: A supporting glass substrate has a ratio of a Young's modulus (GPa) to a density (g/cm3) that is 37.0 (GPa·cm3/g) or more and the ratio has a value larger than a ratio calculation value, the ratio calculation value being a ratio of a Young's modulus (GPa) calculated from a composition to a density (g/cm3). The ratio calculation value is represented by the following expression: ?=2·?{(Vi·Gi)/Mi·Xi}, where, in the expression, Vi is a filling parameter of a metal oxide contained in the supporting glass substrate, Gi is a dissociation energy of a metal oxide contained in the supporting glass substrate. Mi is a molecular weight of a metal oxide contained in the supporting glass substrate, and Xi is a molar ratio of a metal oxide contained in the supporting glass substrate.

Abstract: An alkali-free glass has a strain point of 650° C. or more, an average coefficient of thermal expansion at 50 to 350° C. of from 30×10?7 to 45×10?7/° C., and a temperature T2 at which a glass viscosity reaches 102 dPa·s of from 1,500 to 1,800° C. The alkali-free glass contains, as represented by mol % based on oxides, SiO2: from 62 to 70%, Al2O3: from 9 to 16% B2O3: from 0 to 12%, MgO: from 3 to 10%, CaO: from 4 to 12%, SrO: from 0 to 6%, and Fe2O3: from 0.001 to 0.04%, provided that MgO+CaO+SrO+BaO is from 12 to 25%. The alkali-free glass has a ?-OH value of from 0.35 to 0.85/mm.

Abstract: To provide a glass plate having a high Young's modulus and a high devitrification viscosity. A glass includes, in mol % based on oxides: SiO2 of 30.0 to 50.0%; B2O3 of 10.0 to 30.0%; Al2O3of 10.0 to 30.0%; Y2O3 of 3.0 to 17.0%; and Gd2O3 of 3.5 to 17.0%, in which (Gd2O3+Y2O3) is from 16.0 to 22.0%, and (Gd2O3/Y2O3) is from 0.15 to 7.0.

Abstract: Provided is a glass substrate with which it is possible to reduce dielectric loss in high-frequency signals, and which also has excellent thermal shock resistance. This invention satisfies the relation {Young's modulus (GPa)×average thermal expansion coefficient (ppm/° C.) at 50-350° C}?300 (GPa·ppm/° C.), wherein the relative dielectric constant at 20° C. and 35 GHz does not exceed 10, and the dielectric dissipation factor at 20° C. and 35 GHz does not exceed 0.006.

Abstract: A glass substrate includes, as a glass matrix composition as represented by mole percentage based on oxides, SiO2: 55%-75%, Al2O3: 2%-15%, MgO: 0%-10%, CaO: 0%-10%, SrO: 0%-10%, BaO: 0%-15%, ZrO2: 0%-5%, Na2O: 0%-20%, K2O: 5%-30%, and Li2O: 0%-5.0%. The glass substrate has a total content of alkali metal oxides, as represented by mole percentage based on oxides, of 10%-30%, a value obtained by dividing the total content of alkali metal oxides by the content of SiO2 of 0.50 or smaller, a value obtained by dividing the content of Na2O by a value obtained by subtracting the content of Al2O3 from a total content of Na2O and K2O of 0.90 or smaller, and an average coefficient of thermal expansion ?1 at 50° C.-350° C. of 11 ppm/° C.-16 ppm/° C.

Abstract: The present invention relates to a substrate having a dielectric loss tangent (A) as measured at 20° C. and 10 GHz of 0.1 or less, a dielectric loss tangent (B) as measured at 20° C. and 35 GHz of 0.1 or less, and a ratio [a dielectric loss tangent (C) as measured at an arbitrary temperature in a range of ?40 to 150° C. and at 10 GHz]/[the dielectric loss tangent (A)] of 0.90-1.10, or a substrate having a relative permittivity (a) as measured at 20° C. and 10 GHz of 4 or more and 10 or less, a relative permittivity (b) as measured at 20° C. and 35 GHz of 4 or more and 10 or less, and a ratio [a relative permittivity (c) as measured at an arbitrary temperature in a range of ?40 to 150° C. and at 10 GHz]/[the relative permittivity (a)] of 0.993-1.007.

Abstract: A glass has a density of 2.60 g/cm3 or lower, a Young's modulus of 88 GPa or more, a strain point of 650 to 720° C., a temperature T4 at which a glass viscosity reaches 104 dPa·s of 1,320° C. or lower, a glass surface devitrification temperature (Tc) of T4+20° C. or lower, and an average coefficient of thermal expansion of 30×10?7 to 43×10?7/° C. at 50 to 350° C. The glass contains, as represented by mol % based on oxides, 50 to 80% of SiO2, 8 to 20% of Al2O3, 0 to 0.5% in total of at least one kind of alkali metal oxide selected from the group consisting of Li2O, Na2O and K2O, and 0 to 1% of P2O5.

Abstract: An alkali free glass has an average coefficient of thermal expansion at 50 to 350° C. of 30×10?7 to 43×10?7/° C., a Young's modulus of 88 GPa or more, a strain point of 650 to 725° C., a temperature T4 at which a viscosity reaches 104 dPa·s of 1,290° C. or lower, a glass surface devitrification temperature (Tc) of T4+20° C. or lower, and a temperature T2 at which the viscosity reaches 102 dPa·s of 1,680° C. or lower. The alkali free glass contains, as represented by mol % based on oxides, 62 to 67% of SiO2, 12.5 to 16.5% of Al2O3, 0 to 3% of B2O3, 8 to 13% of MgO, 6 to 12% of CaO, 0.5 to 4% of SrO, and 0 to 0.5% of BaO. MgO+CaO+SrO+BaO is 18 to 22%, and MgO/CaO is 0.8 to 1.33.

Abstract: The present invention relates to an alkali-free glass substrate, in which when two arbitrary sites in one main surface thereof are selected, an absolute value of a difference between a thermal shrinkage ratio in an arbitrary direction at one site and a thermal shrinkage ratio in a direction orthogonal to the arbitrary direction at another site is 2 ppm or less, provided that the thermal shrinkage ratio is calculated by measuring a deformation amount in a measuring direction of the glass substrate between before and after a heat treatment of raising a temperature from normal temperature to 600° C. at 100° C./hour, holding the glass substrate at 600° C. for 80 minutes, and lowering the temperature from 600° C. to normal temperature at 100° C./hour.

Abstract: The present invention provides a glass substrate in which in a heat treatment step of sticking a silicon substrate and a glass substrate to each other, an alkali ion is hardly diffused into the silicon substrate, and a residual strain generated in the silicon substrate is small. A glass substrate of the present invention has: an average thermal expansion coefficient ?50/100 at 50° C. to 100° C. of 2.70 ppm/° C. to 3.20 ppm/° C.; an average thermal expansion coefficient ?200/300 at 200° C. to 300° C. of 3.45 ppm/° C. to 3.95 ppm/° C.; a value ?200/300/?50/100 obtained by dividing the average thermal expansion coefficient ?200/300 at 200° C. to 300° C. by the average thermal expansion coefficient ?50/100 at 50° C. to 100° C. of 1.20 to 1.30; and a content of an alkali metal oxide being 0% to 0.1% as expressed in terms of a molar percentage based on oxides.

Abstract: The present invention relates to an alkali-free glass and a method for producing the same. More specifically, the present invention relates to an alkali-free glass suitable as a glass for substrates of various displays such as liquid crystal display, and a method for producing the same. According to the present invention, an alkali-free glass suitable as a glass for display substrates, in which inclusion of bubbles is greatly reduced by virtue of containing a refining agent and suppressing the stirring reboil, is obtained.

Abstract: A light selective transmission type glass 10 according to the present invention includes: a glass substrate 12; and a light selective transmission layer 11 provided on at least one main surface of the glass substrate 12. The glass substrate 12 has an average thermal expansion coefficient ?50/100 at 50° C. to 100° C. of 2.70 ppm/° C. to 3.20 ppm/° C., an average thermal expansion coefficient ?200/300 at 200° C. to 300° C. of 3.45 ppm/° C. to 3.95 ppm/° C., a value ?200/300/?50/100 obtained by dividing the average thermal expansion coefficient ?200/300 at 200° C. to 300° C. by the average thermal expansion coefficient ?50/100 at 50° C. to 100° C. of 1.20 to 1.30, and a content of an alkali metal oxide being 0% to 0.1%.

Abstract: Disclosed is a method for manufacturing a semiconductor device which includes: a semiconductor chip; a substrate and/or another semiconductor chip; and an adhesive layer interposed therebetween. This method comprises the steps of: heating and pressuring a laminate having: the semiconductor chip; the substrate; the another semiconductor chip or a semiconductor wafer; and the adhesive layer by interposing the laminate with pressing members for temporary press-bonding to thereby temporarily press-bond the substrate and the another semiconductor chip or the semiconductor wafer to the semiconductor chip; and heating and pressuring the laminate by interposing the laminate with pressing members for main press-bonding, which are separately prepared from the pressing members for temporary press-bonding, to thereby electrically connect a connection portion of the semiconductor chip and a connection portion of the substrate or the another semiconductor chip.

Abstract: A glass substrate for a high-frequency device, which contains SiO2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na2O/(Na2O+K2O) in the range of 0.01-0.99, and the glass substrate having a total content of alkaline earth metal oxides in the range of 0.1-13% in terms of mole percent on the basis of oxides, wherein at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

Abstract: Disclosed is a method for manufacturing a semiconductor device which includes: a semiconductor chip; a substrate and/or another semiconductor chip; and an adhesive layer interposed therebetween. This method comprises the steps of: heating and pressuring a laminate having: the semiconductor chip; the substrate; the another semiconductor chip or a semiconductor wafer; and the adhesive layer by interposing the laminate with pressing members for temporary press-bonding to thereby temporarily press-bond the substrate and the another semiconductor chip or the semiconductor wafer to the semiconductor chip; and heating and pressuring the laminate by interposing the laminate with pressing members for main press-bonding, which are separately prepared from the pressing members for temporary press-bonding, to thereby electrically connect a connection portion of the semiconductor chip and a connection portion of the substrate or the another semiconductor chip.

Abstract: The present invention provides a glass substrate in which in a step of sticking a glass substrate and a silicon-containing substrate to each other, bubbles hardly intrude therebetween. The present invention relates to a glass substrate for forming a laminated substrate by lamination with a silicon-containing substrate, having a warpage of 2 ?m to 300 ?m, and an inclination angle due to the warpage of 0.0004° to 0.12°.

Abstract: The present invention provides a glass substrate in which in a step of sticking a glass substrate and a silicon-containing substrate to each other, bubbles hardly intrude therebetween. The present invention relates to a glass substrate for forming a laminated substrate by lamination with a silicon-containing substrate, having a warpage of 2 ?m to 300 ?m, and an inclination angle due to the warpage of 0.0004° to 0.12°.

Abstract: The present invention relates to a liquid crystal display panel having a predetermined size, containing a wiring film formed of a metal, an insulating film containing an inorganic substance and a substrate formed of a non-alkali glass, in which the metal has the product of a Young's modulus (E) and a thermal expansion coefficient (?) at room temperature falling within a predetermined range, ? of the inorganic substance is smaller than that of the non-alkali glass, the non-alkali glass has E of from 70 GPa to 95 GPa and ? of from 32×10?7 to 45×10?7 (1/° C.) in which E and ? satisfies a predetermined formula, and has a predetermined composition.

Abstract: The present invention relates to a liquid crystal display panel having a predetermined size, containing a wiring film formed of a metal, an insulating film containing an inorganic substance and a substrate formed of a non-alkali glass, in which the metal has the product of a Young's modulus (E) and a thermal expansion coefficient (?) at room temperature falling within a predetermined range, ? of the inorganic substance is smaller than that of the non-alkali glass, the non-alkali glass has E of from 70 GPa to 95 GPa and ? of from 32×10?7 to 45×10?7 (1/° C.) in which E and ? satisfies a predetermined formula, and has a predetermined composition.

Abstract: The present invention relates to an alkali-free glass and a method for producing the same. More specifically, the present invention relates to an alkali-free glass suitable as a glass for substrates of various displays such as liquid crystal display, and a method for producing the same. According to the present invention, an alkali-free glass suitable as a glass for display substrates, in which inclusion of bubbles is greatly reduced by virtue of containing a refining agent and suppressing the stirring reboil, is obtained.