Abstract: An alkali free glass having an average coefficient of thermal expansion at 50 to 350° C. of 30×10?7 to 43×10?7/° C., a strain point of 650 to 725° C., a temperature T4 at which a viscosity reaches 104 dPa·s of 1,290° C. or lower, and a temperature T2 at which the viscosity reaches 102 dPa·s of 1,680° C. or lower, and including, as represented by mol % based on oxides: 62 to 67% of SiO2, 8 to 13% of MgO, 6 to 12% of CaO, 0.5 to 4% of SrO, and 0 to 0.5% of BaO, wherein MgO+CaO+SrO+BaO is 18 to 22%, and MgO/CaO is 0.8 or more, and the alkali free glass has a value expressed by the following Expression (I) of 4.6 or less: (7.87[A2O3]-8.5[B2O3]+11.35[MgO]+7.09[CaO]+5.52[SrO]?1.45[BaO])/[SiO2]?? Expression (I).

Abstract: An alkali free glass has an average coefficient of thermal expansion at 50 to 350° C. of 30×10?7 to 43×10?7/° C., a Young's modulus of 88 GPa or more, a strain point of 650 to 725° C., a temperature T4 at which a viscosity reaches 104 dPa·s of 1,290° C. or lower, a glass surface devitrification temperature (Tc) of T4+20° C. or lower, and a temperature T2 at which the viscosity reaches 102 dPa·s of 1,680° C. or lower. The alkali free glass contains, as represented by mol % based on oxides, 62 to 67% of SiO2, 12.5 to 16.5% of Al2O3, 0 to 3% of B2O3, 8 to 13% of MgO, 6 to 12% of CaO, 0.5 to 4% of SrO, and 0 to 0.5% of BaO. MgO+CaO+SrO+BaO is 18 to 22%, and MgO/CaO is 0.8 to 1.33.

Abstract: A glass substrate contains, as a glass matrix composition as represented by mole percentage based on oxides, SiO2: 58-75%, Al2O3: 4.5-16%, B2O3: 0-6%, MgO: 0-6%, CaO: 0-6%, SrO: 5-20%, BaO: 5-20%, and MgO+CaO+SrO+BaO:15-40%. The glass substrate has an alkali metal oxide content of 0-0.1% as represented by mole percentage based on oxides. The glass substrate has an average coefficient of thermal expansion ? of 56-90 (×10?7/° C.) at 50° C.-350° C.

Abstract: The present invention provides a glass substrate in which in a step of sticking a glass substrate and a silicon-containing substrate to each other, bubbles hardly intrude therebetween. The present invention relates to a glass substrate for forming a laminated substrate by lamination with a silicon-containing substrate, having a warpage of 2 ?m to 300 ?m, and an inclination angle due to the warpage of 0.0004° to 0.12°.

Abstract: A glass substrate for a high-frequency device, which contains SiO2 as a main component, the glass substrate having a total content of alkali metal oxides in the range of 0.001-5% in terms of mole percent on the basis of oxides, the alkali metal oxides having a molar ratio represented by Na2O/(Na2O+K2O) in the range of 0.01-0.99, and the glass substrate having a total content of alkaline earth metal oxides in the range of 0.1-13% in terms of mole percent on the basis of oxides, wherein at least one main surface of the glass substrate has a surface roughness of 1.5 nm or less in terms of arithmetic average roughness Ra, and the glass substrate has a dielectric dissipation factor at 35 GHz of 0.007 or less.

Abstract: The present invention relates to an LED element substrate on which an LED element is to be provided and which includes a glass, in which at least one main surface of the substrate is black, and one or more LED elements are to be provided on the black main surface, and relates to an LED element substrate on which an LED element is to be provided and which includes a glass, in which at least one main surface of the substrate is black, the substrate comprises a plurality of holes, and one or more LED elements are to be provided on an inside of each of the holes.

Abstract: A carrier substrate to be used, when manufacturing a member for an electronic device on a surface of a substrate, by being bonded to the substrate, includes at least a first glass substrate. The first glass substrate has a compaction described below of 80 ppm or less. Compaction is a shrinkage in a case of subjecting the first glass substrate to a temperature raising from a room temperature at 100° C./hour and to a heat treatment at 600° C. for 80 minutes, and then to a cooling to the room temperature at 100° C./hour.

Abstract: The present invention relates to a liquid crystal display panel having a predetermined size, containing a wiring film formed of a metal, an insulating film containing an inorganic substance and a substrate formed of a non-alkali glass, in which the metal has the product of a Young's modulus (E) and a thermal expansion coefficient (?) at room temperature falling within a predetermined range, ? of the inorganic substance is smaller than that of the non-alkali glass, the non-alkali glass has E of from 70 GPa to 95 GPa and ? of from 32×10?7 to 45×10?7 (1/° C.) in which E and ? satisfies a predetermined formula, and has a predetermined composition.

Abstract: The present invention relates to a liquid crystal display panel having a predetermined size, containing a wiring film formed of a metal, an insulating film containing an inorganic substance and a substrate formed of a non-alkali glass, in which the metal has the product of a Young's modulus (E) and a thermal expansion coefficient (?) at room temperature falling within a predetermined range, ? of the inorganic substance is smaller than that of the non-alkali glass, the non-alkali glass has E of from 70 GPa to 95 GPa and a of from 32×10?7 to 45×10?7 (1/° C.) in which E and ? satisfies a predetermined formula, and has a predetermined composition.

Abstract: A carrier substrate to be used, when manufacturing a member for an electronic device on a surface of a substrate, by being bonded to the substrate, includes at least a first glass substrate. The first glass substrate has a compaction described below of 80 ppm or less. Compaction is a shrinkage in a case of subjecting the first glass substrate to a temperature raising from a room temperature at 100° C./hour and to a heat treatment at 600° C. for 80 minutes, and then to a cooling to the room temperature at 100° C./hour.

Abstract: A glass substrate has a compaction of 0.1 to 100 ppm. An absolute value |??50/100| of a difference between an average coefficient of thermal expansion ?50/100 of the glass substrate and an average coefficient of thermal expansion of single-crystal silicon at 50° C. to 100° C., an absolute value |??100/200| of a difference between an average coefficient of thermal expansion ?100/200 of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 100° C. to 200° C., and an absolute value |??200/300| of a difference between an average coefficient of thermal expansion ?200/300 of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 200° C. to 300° C. are 0.16 ppm/° C. or less.

Abstract: Provided is a glass substrate with which it is possible to reduce dielectric loss in high-frequency signals, and which also has excellent thermal shock resistance. This invention satisfies the relation {Young's modulus (GPa)×average thermal expansion coefficient (ppm/° C.) at 50-350° C.}?300 (GPa·ppm/° C.), wherein the relative dielectric constant at 20° C. and 35 GHz does not exceed 10, and the dielectric dissipation factor at 20° C. and 35 GHz does not exceed 0.006.

Abstract: The present invention relates to a liquid crystal display panel having a predetermined size, containing a wiring film formed of a metal, an insulating film containing an inorganic substance and a substrate formed of a non-alkali glass, in which the metal has the product of a Young's modulus (E) and a thermal expansion coefficient (?) at room temperature falling within a predetermined range, ? of the inorganic substance is smaller than that of the non-alkali glass, the non-alkali glass has E of from 70 GPa to 95 GPa and ? of from 32×10?7 to 45×10?7 (1/° C.) in which E and ? satisfies a predetermined formula, and has a predetermined composition.

Abstract: A carrier substrate to be used, when manufacturing a member for an electronic device on a surface of a substrate, by being bonded to the substrate, includes at least a first glass substrate. The first glass substrate has a compaction described below of 80 ppm or less. Compaction is a shrinkage in a case of subjecting the first glass substrate to a temperature raising from a room temperature at 100° C./hour and to a heat treatment at 600° C. for 80 minutes, and then to a cooling to the room temperature at 100° C./hour.

Abstract: A glass substrate has a compaction of 0.1 to 100 ppm. An absolute value |??50/100| of a difference between an average coefficient of thermal expansion ?50/100 of the glass substrate and an average coefficient of thermal expansion of single-crystal silicon at 50° C. to 100° C., an absolute value |??100/200| of a difference between an average coefficient of thermal expansion ?100/200 of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 100° C. to 200° C., and an absolute value |??200/300| of a difference between an average coefficient of thermal expansion ?200/300 of the glass substrate and an average coefficient of thermal expansion of the single-crystal silicon at 200° C. to 300° C. are 0.16 ppm/° C. or less.

Abstract: An alkali free glass has an average coefficient of thermal expansion at 50 to 350° C. of 30×10?7 to 43×10?7/° C., a Young's modulus of 88 GPa or more, a strain point of 650 to 725° C., a temperature T4 at which a viscosity reaches 104 dPa·s of 1,290° C. or lower, a glass surface devitrification temperature (Tc) of T4+20° C. or lower, and a temperature T2 at which the viscosity reaches 102 dPa·s of 1,680° C. or lower. The alkali free glass contains, as represented by mol % based on oxides, 62 to 67% of SiO2, 12.5 to 16.5% of Al2O3, 0 to 3% of B2O3, 8 to 13% of MgO, 6 to 12% of CaO, 0.5 to 4% of SrO, and 0 to 0.5% of BaO. MgO+CaO+SrO+BaO is 18 to 22%, and MgO/CaO is 0.8 to 1.33.

Abstract: An alkali free glass has an average coefficient of thermal expansion at 50 to 350° C. of 30×10?7 to 43×10?7/° C., a Young's modulus of 88 GPa or more, a strain point of 650 to 725° C., a temperature T4 at which a viscosity reaches 104 dPa·s of 1,290° C. or lower, a glass surface devitrification temperature (Tc) of T4+20° C. or lower, and a temperature T2 at which the viscosity reaches 102 dPa·s of 1,680° C. or lower. The alkali free glass contains, as represented by mol % based on oxides, 62 to 67% of SiO2, 12.5 to 16.5% of Al2O3, 0 to 3% of B2O3, 8 to 13% of MgO, 6 to 12% of CaO, 0.5 to 4% of SrO, and 0 to 0.5% of BaO. MgO+CaO+SrO+BaO is 18 to 22%, and MgO/CaO is 0.8 to 1.33.

Abstract: An alkali-free glass substrate includes, as represented by molar percentage based on oxides, 11.0% or more of Al2O3, 8.0% or more of B2O3, and 1% or more of SrO. The alkali-free glass substrate has an average coefficient of thermal expansion ?100/200 at 100 to 200° C. of from 3.10 ppm/° C. to 3.70 ppm/° C., a Young's modulus of 76.0 GPa or less, and a density of 2.42 g/cm3 or more.

Abstract: Suppressing deflection and reducing weight are to be achieved. A supporting glass substrate has a ratio of a Young's modulus (GPa) to a density (g/cm3) that is 37.0 (GPa·cm3/g) or more and the ratio has a value larger than a ratio calculation value, the ratio calculation value being a ratio of a Young's modulus (GPa) calculated from a composition to a density (g/cm3). The ratio calculation value is represented by the following expression: ?=2·?{(Vi·Gi)/Mi·Xi}, where, in the expression, Vi is a filling parameter of a metal oxide contained in the supporting glass substrate, Gi is a dissociation energy of a metal oxide contained in the supporting glass substrate, Mi is a molecular weight of a metal oxide contained in the supporting glass substrate, and Xi is a molar ratio of a metal oxide contained in the supporting glass substrate.

Abstract: Provided is a glass substrate with which it is possible to reduce dielectric loss in high-frequency signals, and which also has excellent thermal shock resistance. This invention satisfies the relation {Young's modulus (GPa)×average thermal expansion coefficient (ppm/° C.) at 50-350° C.}?300 (GPa·ppm/° C.), wherein the relative dielectric constant at 20° C. and 35 GHz does not exceed 10, and the dielectric dissipation factor at 20° C. and 35 GHz does not exceed 0.006.