Abstract: In a plasma processing apparatus, first to third RF power monitors 94, 94 and 98 are configured to monitor high frequency powers (progressive wave powers), which propagate on first to third high frequency power supply lines 88, 90 and 92 from first to third high frequency power supplies 36, 38 and 40 toward a load side, respectively, and high frequency powers (reflection wave powers), which propagate on the first high frequency power supply lines 88, 90 and 92 from the load side toward the first to third high frequency power supplies 36, 38 and 40, respectively, at the same time. A main controller 82 is configured to control the high frequency power supplies 36, 38 and 40 and matching devices 42, 44 and 46 based on monitoring information sent from RF power monitors 94, 96 and 98.

Abstract: In a plasma processing apparatus, first to third RF power monitors 94, 94 and 98 are configured to monitor high frequency powers (progressive wave powers), which propagate on first to third high frequency power supply lines 88, 90 and 92 from first to third high frequency power supplies 36, 38 and 40 toward a load side, respectively, and high frequency powers (reflection wave powers), which propagate on the first high frequency power supply lines 88, 90 and 92 from the load side toward the first to third high frequency power supplies 36, 38 and 40, respectively, at the same time. A main controller 82 is configured to control the high frequency power supplies 36, 38 and 40 and matching devices 42, 44 and 46 based on monitoring information sent from RF power monitors 94, 96 and 98.

Abstract: A high frequency power device includes a first oscillator outputting a first oscillating signal oscillated by a first predetermined frequency and a second oscillator outputting a second oscillating signal oscillated by a second predetermined frequency. A phase adjuster adjusts the phase of the second oscillating signal and a modulation index adjuster adjusts a modulation index of the second oscillating signal. A modulator outputs a modulated signal obtained by modulating, in frequency, the first oscillating signal by the phase adjusted and modulated second oscillating signal, and a high frequency output unit amplifies and outputs the modulated signal outputted from the modulator.

Abstract: A high frequency power device for supplying high frequency power to a load to generate plasma, includes: a high frequency detector, detecting a forward wave voltage and a reflected wave voltage in an output end of the high frequency power device to output a forward wave signal corresponding to the forward wave voltage and a reflected wave signal corresponding to the reflected wave voltage; a first oscillator, outputting a signal oscillated by a first predetermined frequency as a first oscillating signal; a second oscillator, outputting a signal oscillated by a frequency within a second predetermined frequency band as a second oscillating signal; a phase adjuster, adjusting a phase of the second oscillating signal outputted from the second oscillator; a modulation index adjuster, adjusting a modulation index of the second oscillating signal outputted from the second oscillator; a modulator, outputting a modulated signal obtained by modulating, in frequency, the first oscillating signal by the second oscillatin