Abstract: A vertical-cavity surface-emitting laser diode includes: a first resonator that has a plurality of semiconductor layers comprising a first current narrowing structure having a first conductive region and a first non-conductor region; a first electrode that supplies electric power to drive the first resonator; a second resonator that has a plurality of semiconductor layers comprising a second current narrowing structure having a second conductive region and a second non-conductive region and that is formed side by side with the first resonator, the second current narrowing structure being formed in same current narrowing layer as the layer where the first current narrowing structure is formed; and a coupling portion as defined herein; and an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.

Abstract: A measurement apparatus includes: an eyelid opening section that comes into contact with skin on a periphery of an eyeball of a measurement subject and maintains an eyelid of the measurement subject in an open state; an emission section that emits light such that the light travels across an anterior chamber of the eyeball in which the eyelid is maintained in an open state by the eyelid opening portion; and a light reception section that receives the light which travels across the anterior chamber.

Abstract: An optical measurement apparatus includes: an emission section that emits light such that the light travels across an anterior chamber of an eyeball of a measurement subject; a light reception section that receives light that is emitted from the emission section and travels across the anterior chamber; and a positioning section that performs positioning of one of the emission section and the light reception section at a position where skin on a periphery of an inner canthus of the eyeball is squeezed into an eye socket accommodating the eyeball.

Abstract: An optical measurement apparatus for an eyeball, including: a light irradiation section that is disposed on an inner canthus side of the eyeball and that includes a light source, a polarization portion that performs polarization control of light from the light source, and a light reflection portion that is disposed closer to an inward side of an eyeball than the polarization portion is and that reflects light subjected to the polarization control by the polarization portion such that the light travels across an anterior chamber of the eyeball; and a light reception section that is disposed on an outer canthus side of the eyeball, that receives the light traveling across the anterior chamber without further going through a light reflection portion that changes a polarization state of light, and that detects a change of the polarization state of the received light.

Abstract: An optical measurement apparatus for an eyeball includes a light emission section that emits light to travel across an anterior chamber inside an eyeball of a measurement subject, a light reception section that receives light traveling across the anterior chamber, a holding member that holds the light emission section and the light reception section, and an adjustment section that is provided in the holding member and switches an angle of the light emitted from the light emission section toward the anterior chamber to adjust the angle of the light to an angle at which the light travels across the anterior chamber and received by the light reception section.

Abstract: There is provided a surface emitting semiconductor laser including: a substrate; and a semiconductor layer including: a first semiconductor multilayer film having plural sets of specific layers, a second semiconductor multilayer film having plural sets of specific layers, and an active layer provided between them, so as to constitute a resonator.

Abstract: A method of manufacturing an optical semiconductor element includes: a first step in which a columnar structure of a semiconductor layer formed on a semi-insulating substrate is formed; a second step in which the substrate is exposed in a periphery of the columnar structure; a third step in which a region including exposed surfaces of the first contact layer and the substrate is pretreated; a fourth step in which a first electrode is formed on the exposed surface of the first contact layer; a fifth step in which an interlayer insulating film is formed in a region including a side surface of the columnar structure and the exposed surfaces; a sixth step in which a first electrode wiring is formed on the interlayer insulating film; and a seventh step in which a second electrode wiring is formed on the interlayer insulating film.

Abstract: A method of manufacturing an optical semiconductor element includes: a first step in which a columnar structure of a semiconductor layer formed on a semi-insulating substrate is formed; a second step in which the substrate is exposed in a periphery of the columnar structure; a third step in which a region including exposed surfaces of the first contact layer and the substrate is pretreated; a fourth step in which a first electrode is formed on the exposed surface of the first contact layer; a fifth step in which an interlayer insulating film is formed in a region including a side surface of the columnar structure and the exposed surfaces; a sixth step in which a first electrode wiring is formed on the interlayer insulating film; and a seventh step in which a second electrode wiring is formed on the interlayer insulating film.

Abstract: An optical measuring apparatus includes a light output device that outputs light so as to cross an anterior chamber of an eyeball of a subject, a light receiving device that receives the light having crossed the anterior chamber, and a positioning device that positions the light output device and the light receiving device at such positions that, when the eyeball is adducted, the light output from the light output device crosses the anterior chamber and is received by the light receiving device.

Abstract: A concentration calculation system of an optically active substance, includes: a calculation unit configured to: acquire an amount of change in a polarization state by allowing light having different wavelengths to pass through a cornea and an aqueous humor; and calculate a concentration of a specific optically active substance contained in the aqueous humor by a least squares method based on a theoretical formula which includes a matrix representing a polarization property of the cornea and a matrix representing a polarization property of the aqueous humor and represents a wavelength dependence of the amount of the change, wherein the matrix representing the polarization property of the aqueous humor is represented by a function of an expression representing the wavelength dependence of an optical rotation degree of the specific substance and the expression includes a concentration value of the specific substance as an unknown quantity or a temporal known quantity.

Abstract: Provided is a surface-emitting semiconductor laser including a substrate; a first semiconductor multilayer reflector of a first conductivity type formed on the substrate, the first semiconductor multilayer reflector including plural pairs of a low-refractive-index layer and a high-refractive-index layer; a cavity region formed on the first semiconductor multilayer reflector; a second semiconductor multilayer reflector of a second conductivity type formed on the cavity region, the second semiconductor multilayer reflector including plural pairs of a low-refractive-index layer and a high-refractive-index layer; a columnar structure extending from the second semiconductor multilayer reflector to the cavity region; and a current confinement layer formed inside the columnar structure by selective oxidation of a semiconductor layer containing Al. The cavity region includes an active region; and a cavity extension region interposed between the active region and the first semiconductor multilayer reflector.

Abstract: A surface-emitting semiconductor laser device includes a substrate and a semiconductor layer disposed on the substrate. The semiconductor layer includes a first semiconductor multilayer film of a first conductivity type, a first spacer layer, an active layer, a second spacer layer, and a second semiconductor multilayer film of a second conductivity type. The first semiconductor multilayer film and the second semiconductor multilayer film form a cavity. A peak of a pattern of a standing wave formed by the cavity and the center of the active layer are located at different positions.

Abstract: There is provided a surface emitting semiconductor laser including: a substrate; and a semiconductor layer including: a first semiconductor multilayer film having plural sets of specific layers, a second semiconductor multilayer film having plural sets of specific layers, and an active layer provided between them, so as to constitute a resonator.

Abstract: Provided is a surface-emitting semiconductor laser device including a substrate; a semiconductor layer formed on the substrate, the semiconductor layer including a first semiconductor multilayer film of a first conductivity type, an active region, and a second semiconductor multilayer film of a second conductivity type, the first semiconductor multilayer film and the second semiconductor multilayer film forming a cavity; and an oxidation-resistant structure including a groove formed along at least a portion of an outer periphery of the semiconductor layer and an oxidation-resistant portion formed on a surface of the groove.

Abstract: An optical measuring instrument 1 is equipped with an optical system 20 to be used for measuring a characteristic of the aqueous humor in the anterior chamber 13 of an eyeball 10 of a measurement subject person and a holding unit 50 which holds the optical system 20 etc. The optical system 20 is equipped with a light emitting system 20A and a photodetecting system 20B. An optical path 28 is set so that light emitted from the light emitting system 20A passes through (traverses) the anterior chamber 13 and is detected by the photodetecting system 20B in a state that the eyeball 10 is turned outward.

Abstract: A surface-emitting semiconductor laser includes a substrate; a first semiconductor multilayer film reflector stacked on the substrate; an active region stacked on or above the first semiconductor multilayer film reflector; a second semiconductor multilayer film reflector stacked on or above the active layer; a cavity extension region interposed between the first semiconductor multilayer film reflector and the active region or between the second semiconductor multilayer film reflector and the active region; and a carrier block layer interposed between the cavity extension region and the active region. The carrier block layer includes a first carrier block layer and a second carrier block layer. The first and second carrier block layers have a larger band gap than the active region and the cavity extension region. The first carrier block layer has a larger band gap than the second carrier block layer.

Abstract: A vertical-cavity surface-emitting laser diode includes: a first resonator that has a plurality of semiconductor layers comprising a first current narrowing structure having a first conductive region and a first non-conductor region; a first electrode that supplies electric power to drive the first resonator; a second resonator that has a plurality of semiconductor layers comprising a second current narrowing structure having a second conductive region and a second non-conductive region and that is formed side by side with the first resonator, the second current narrowing structure being formed in same current narrowing layer as the layer where the first current narrowing structure is formed; and a coupling portion as defined herein; and an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.

Abstract: A concentration calculation system calculates a concentration of the optically active substance based on a formula. The formula includes a first function representing wavelength dependence of an optical rotation of a first optically-active substance, and a second function representing wavelength dependence of an optical rotation of a second optically-active substance. In the first function, concentration of the first optically-active substance has an unknown value, and an inherent value for defining a characteristic of optical rotatory dispersion of the first optically-active substance is a known value or an unknown value within a certain limited range. In the second function, an inherent value for defining a characteristic of optical rotatory dispersion of the second optically-active substance is an unknown value.

Abstract: A vertical-cavity surface-emitting laser diode includes: a first resonator that has a plurality of semiconductor layers comprising a first current narrowing structure having a first conductive region and a first non-conductor region; a first electrode that supplies electric power to drive the first resonator; a second resonator that has a plurality of semiconductor layers comprising a second current narrowing structure having a second conductive region and a second non-conductive region and that is formed side by side with the first resonator, the second current narrowing structure being formed in same current narrowing layer as the layer where the first current narrowing structure is formed; and a coupling portion as defined herein; and an equivalent refractive index of the coupling portion is smaller than an equivalent refractive index of each of the first resonator and the second resonator.

Abstract: Provided is a surface-emitting semiconductor laser device including a substrate; a semiconductor layer formed on the substrate, the semiconductor layer including a first semiconductor multilayer film of a first conductivity type, an active region, and a second semiconductor multilayer film of a second conductivity type, the first semiconductor multilayer film and the second semiconductor multilayer film forming a cavity; and an oxidation-resistant structure including a groove formed along at least a portion of an outer periphery of the semiconductor layer and an oxidation-resistant portion formed on a surface of the groove.