Abstract: An elastic membrane capable of being easily secured to a head body of a substrate holding apparatus while inhibiting variation of a degree of deformation of the elastic membrane in a circumferential direction is disclosed. The elastic membrane according to the present invention is used in the substrate holding apparatus. The elastic membrane includes: a contact portion to be brought into contact with a substrate for pressing the substrate against a polishing pad; and an edge circumferential wall extending from a peripheral edge of the contact portion. The edge circumferential wall includes an edge-circumferential-wall lip portion sandwiched between a head body of the substrate holding apparatus and an edge mounting member for securing the edge circumferential wall to the head body. The edge-circumferential-wall lip portion has at least a part of a surface thereof roughened.

Abstract: An elastic membrane capable of being easily secured to a head body of a substrate holding apparatus while inhibiting variation of a degree of deformation of the elastic membrane in a circumferential direction is disclosed. The elastic membrane according to the present invention is used in the substrate holding apparatus. The elastic membrane includes: a contact portion to be brought into contact with a substrate for pressing the substrate against a polishing pad; and an edge circumferential wall extending from a peripheral edge of the contact portion. The edge circumferential wall includes an edge-circumferential-wall lip portion sandwiched between a head body of the substrate holding apparatus and an edge mounting member for securing the edge circumferential wall to the head body. The edge-circumferential-wall lip portion has at least a part of a surface thereof roughened.

Abstract: A method and device for regenerating an ion exchanger can regenerate an ion exchanger easily and quickly, and can minimize a load upon cleaning of the regenerated ion exchanger and disposal of waste liquid. A method for regenerating a contaminated ion exchanger includes: providing a pair of a regeneration electrode and a counter electrode, a partition disposed between the electrodes, and an ion exchanger to be regenerated disposed between the counter electrode and the partition; and applying a voltage between the regeneration electrode and the counter electrode while supplying a liquid between the partition and the regeneration electrode and also supplying a liquid between the partition and the counter electrode.

Abstract: A polishing apparatus is provided for polishing wafers at a high yield rate even if roll-off exists. The polishing apparatus polishes a wafer by applying a pressure between a polishing member (polishing pad) 201 and the wafer held by a holding member (top ring) 52 and moving the polishing member relative to the wafer. The polishing apparatus includes a top ring 52 for holding the wafer, a pressure adjusting mechanism for adjusting a supporting pressure with which the wafer is supported on a supporting surface by a retainer ring, and a control unit for controlling the pressure adjusting mechanism to bring the supporting pressure to a desired pressure based on a roll off quantity of the wafer. The top ring comprises an air bag 202 for pressing the wafer against the polishing pad, a retainer ring which surrounds the wafer, and an air bag for pressing the retainer ring.

Abstract: A polishing apparatus polishes wafers at a high yield rate even if roll-off exists. The polishing apparatus polishes a wafer by applying a pressure between a polishing member (polishing pad) and the wafer held by a holding member (top ring) and moving the polishing member relative to the wafer. The polishing apparatus includes a top ring for holding the wafer, a pressure adjusting mechanism for adjusting a supporting pressure with which the wafer is supported on a supporting surface by a retainer ring, and a control unit for controlling the pressure adjusting mechanism to bring the supporting pressure to a desired pressure based on a roll off quantity of the wafer. The top ring comprises an air bag for pressing the wafer against the polishing pad, a retainer ring which surrounds the wafer, and an air bag for pressing the retainer ring.

Abstract: A polishing apparatus is provided for polishing wafers at a high yield rate even if roll-off exists. The polishing apparatus polishes a wafer by applying a pressure between a polishing member (polishing pad) 201 and the wafer held by a holding member (top ring) 52 and moving the polishing member relative to the wafer. The polishing apparatus includes a top ring 52 for holding the wafer, a pressure adjusting mechanism for adjusting a supporting pressure with which the wafer is supported on a supporting surface by a retainer ring, and a control unit for controlling the pressure adjusting mechanism to bring the supporting pressure to a desired pressure based on a roll off quantity of the wafer. The top ring comprises an air bag 202 for pressing the wafer against the polishing pad, a retainer ring which surrounds the wafer, and an air bag for pressing the retainer ring.

Abstract: A polishing apparatus is provided for polishing wafers at a high yield rate even if roll-off exists. The polishing apparatus polishes a wafer by applying a pressure between a polishing member (polishing pad) 201 and the wafer held by a holding member (top ring) 52 and moving the polishing member relative to the wafer. The polishing apparatus includes a top ring 52 for holding the wafer, a pressure adjusting mechanism for adjusting a supporting pressure with which the wafer is supported on a supporting surface by a retainer ring, and a control unit for controlling the pressure adjusting mechanism to bring the supporting pressure to a desired pressure based on a roll off quantity of the wafer. The top ring comprises an air bag 202 for pressing the wafer against the polishing pad, a retainer ring which surrounds the wafer, and an air bag for pressing the retainer ring.

Abstract: A polishing apparatus is provided for polishing wafers at a high yield rate even if roll-off exists. The polishing apparatus polishes a wafer W by applying a pressure between a polishing member (polishing pad) 201 and the wafer W held by a holding member (top ring) 52 and relatively moving the polishing member 201 to the wafer W. The polishing apparatus comprises a top ring 52 for holding the wafer W, a pressure adjusting mechanism 206 for adjusting a supporting pressure with which the wafer W is supported on a supporting surface by a retainer ring 203, and a control unit 208 for controlling the pressure adjusting mechanism 206 to bring the supporting pressure to a desired pressure based on a roll off quantity of the wafer W. The top ring 52 comprises an air bag 202 for pressing the wafer W against the polishing pad 201, a retainer ring 203 which surrounds the wafer W, and an air bag 204 for pressing the retainer ring 203.

Abstract: A polishing apparatus is provided for polishing wafers at a high yield rate even if roll-off exists. The polishing apparatus polishes a wafer W by applying a pressure between a polishing member (polishing pad) 201 and the wafer W held by a holding member (top ring) 52 and relatively moving the polishing member 201 to the wafer W. The polishing apparatus comprises a top ring 52 for holding the wafer W, a pressure adjusting mechanism 206 for adjusting a supporting pressure with which the wafer W is supported on a supporting surface by a retainer ring 203, and a control unit 208 for controlling the pressure adjusting mechanism 206 to bring the supporting pressure to a desired pressure based on a roll off quantity of the wafer W. The top ring 52 comprises an air bag 202 for pressing the wafer W against the polishing pad 201, a retainer ring 203 which surrounds the wafer W, and an air bag 204 for pressing the retainer ring 203.

Abstract: An electrolytic processing apparatus can detect the end point of electrolytic processing stably with high precision and with a relatively simple construction. The electrolytic processing apparatus includes: a processing electrode which can come close to or into contact with a processing object; a feeding electrode for feeding electricity to the processing object; a fluid supply section for supplying fluid between the processing object and at least one of the processing electrode and the feeding electrode; a processing power source for applying a voltage between the processing electrode and the feeding electrode; a drive section for causing relative movement between the processing object and at least one of the processing electrode and the feeding electrode; and an eddy current sensor for detecting the thickness of the processing object from a change in eddy current loss. The sensor is disposed not in contact with (or separately) by an insulator from the processing electrode and/or the feeding electrode.

Abstract: A substrate polishing apparatus polishes a substrate to a flat mirror finish. The substrate polishing apparatus has a polishing table against which a substrate is pressed, a light-emitting and light-receiving device to emit measurement light from the polishing table to the substrate and to receive reflected light from the substrate for measuring a film on the substrate, a fluid supply passage for supplying a measurement fluid, through which the measurement light and the reflected light pass, to a fluid chamber provided at a light-emitting and light-receiving position of the polishing table, and a fluid supply control device for controlling supply of the measurement fluid to the fluid chamber.

Abstract: A substrate polishing apparatus is used to polish a surface of a substrate such as a semiconductor wafer to a flat mirror finish. The substrate polishing apparatus has a polishing table and a polishing pad mounted on the polishing table for polishing a semiconductor substrate. The polishing pad has a through hole formed therein. The substrate polishing apparatus also has a light emission and reception device for emitting measurement light through the through hole formed in the polishing pad to the semiconductor substrate and receiving reflected light from the semiconductor substrate so as to measure a film on the semiconductor substrate. The light emission and reception device is disposed in the polishing table. The substrate polishing apparatus includes a supply passage for supplying a fluid to a path of the measurement light. The supply passage has an outlet portion detachably mounted on the polishing table.

Abstract: There are provided an electrolytic processing apparatus and an electrolytic processing method which can regenerate an ion exchanger with an enhanced regeneration rate of ion-exchange capacity without adversely affecting the throughput of the apparatus. The electrolytic processing apparatus includes: a holder for holding a workpiece; an electrode section including an electrode, a contact member, and a discharge portion for discharging metal ions which have been taken from the workpiece into the contact member during processing, said electrode section coming close to or into contact with the workpiece held by the holder to effect processing of the workpiece in the presence of a liquid; and a regeneration dummy electrode which can come close to or into contact with the contact member.

Abstract: A method and device for regenerating an ion exchanger can regenerate an ion exchanger easily and quickly, and can minimize a load upon cleaning of the regenerated ion exchanger and disposal of waste liquid. A method for regenerating a contaminated ion exchanger includes: providing a pair of a regeneration electrode and a counter electrode, a partition disposed between the electrodes, and an ion exchanger to be regenerated disposed between the counter electrode and the partition; and applying a voltage between the regeneration electrode and the counter electrode while supplying a liquid between the partition and the regeneration electrode and also supplying a liquid between the partition and the counter electrode.

Abstract: A method and device for regenerating an ion exchanger can regenerate an ion exchanger easily and quickly, and can minimize a load upon cleaning of the regenerated ion exchanger and disposal of waste liquid. A method for regenerating a contaminated ion exchanger includes: providing a pair of a regeneration electrode and a counter electrode, a partition disposed between the electrodes, and an ion exchanger to be regenerated disposed between the counter electrode and the partition; and applying a voltage between the regeneration electrode and the counter electrode while supplying a liquid between the partition and the regeneration electrode and also supplying a liquid between the partition and the counter electrode.

Abstract: An electrolytic processing apparatus (50) has feed electrodes (74) to feed a current to a substrate (W), an ion exchanger (76) brought into contact with the substrate (W), and process electrodes (72) to perform an electrolytic process on the substrate (W). The electrolytic processing apparatus (50) has an electrolytic processing liquid source to supply an electrolytic processing liquid between the substrate (W) and the ion exchanger (76), and a regeneration liquid supply source to supply a regeneration liquid to a regeneration liquid chambers (90a, 90b). The electrolytic processing apparatus (50) includes regeneration electrodes (84) spaced from the process electrodes (72). The feed electrode (74) has a potential higher than the process electrode (72) and the same polarity as the process electrode (72). The process electrode (72) has a potential higher than the regeneration electrode (84).

Abstract: A polishing method can automatically reset polishing conditions according to a state of a polishing member based on data on a polishing profile changing with time, thereby extending life of the polishing member and obtaining flatness of a polished surface with higher accuracy. The polishing method, includes steps of: independently applying a desired pressure by each of pressing portions of a top ring on a polishing object; estimating a polishing profile of the polishing object based on set pressure values, and calculating a recommended polishing pressure value so that a difference between the polishing profile of the polishing object after it is polished under certain polishing conditions and a desired polishing profile becomes smaller; and polishing the polishing object with the recommended polishing pressure value.

Abstract: The present invention provides an electrolytic processing apparatus and an electrolytic processing method which can effectively prevent the formation of pits that would impair the quality of the processed product. The electrolytic processing apparatus including: a processing electrode (210) for processing a workpiece; a feeding electrode (212) for feeding electricity to the workpiece; a power source (232) for applying a voltage between the processing electrode (210) and the feeding electrode (212); a pressure tight container (200) housing the processing electrode (210) and the feeding electrode (212) therein; and a high-pressure liquid supply system (204) for supplying a high-pressure liquid into the pressure tight container (210).

Abstract: A polishing apparatus (30) has a polishing surface (32), a top ring (36) for holding a wafer (W), motors (46, 56) to move the polishing surface (32) and the wafer (W) relative to each other at a relative speed, and a vertical movement mechanism (54) to press the wafer (W) against the polishing surface (32) under a pressing pressure. The polishing apparatus (30) also has a controller (44) to adjust a polishing condition in a non-Preston range in which a polishing rate is not proportional to a product of the pressing pressure and the relative speed. The polishing apparatus (30) can simultaneously achieve uniform supply of a chemical liquid to a surface of the wafer (W) and a uniform polishing rate within the surface of the wafer (W).

Abstract: A polishing method can automatically reset polishing conditions according to a state of a polishing member based on data on a polishing profile changing with time, thereby extending life of the polishing member and obtaining flatness of a polished surface with higher accuracy. The polishing method, includes steps of: independently applying a desired pressure by each of pressing portions of a top ring on a polishing object; estimating a polishing profile of the polishing object based on set pressure values, and calculating a recommended polishing pressure value so that a difference between the polishing profile of the polishing object after it is polished under certain polishing conditions and a desired polishing profile becomes smaller; and polishing the polishing object with the recommended polishing pressure value.