Abstract: A toner includes toner particle containing at least a strontium titanate particle on the surface of the toner particle, and the toner is a water-washed toner from which strontium titanate particle desorbable by water washing are removed by water washing. The water-washed toner contains the strontium titanate particle having a number average particle diameter of primary particle (D1) of 10 nm or more and 150 nm or less, and when the distribution of an Sr element in the water-washed toner in the depth direction is determined, (i) the Sr element abundance on the outermost surface x satisfying 0.00<x?0.80, and (ii) the difference between x and xp “xp?x” satisfying 0.00<xp?x?0.95, where xp is the maximum peak value (atomic %) of the Sr element abundance in the region from the outermost surface to 50 nm.

Abstract: A toner includes toner particle containing at least a strontium titanate particle on the surface of the toner particle, and the toner is a water-washed toner from which strontium titanate particle desorbable by water washing are removed by water washing. The water-washed toner contains the strontium titanate particle having a number average particle diameter of primary particle (D1) of 10 nm or more and 150 nm or less, and when the distribution of an Sr element in the water-washed toner in the depth direction is determined, (i) the Sr element abundance on the outermost surface x satisfying 0.00<x?0.80, and (ii) the difference between x and xp “xp?x” satisfying 0.00<xp?x?0.95, where xp is the maximum peak value (atomic %) of the Sr element abundance in the region from the outermost surface to 50 nm.

Abstract: The present invention provides a deposition film forming apparatus including a reaction container, an exhaust device and an exhaust gas flow path for causing a material gas to flow from the reaction container to the exhaust device, wherein the exhaust gas flow path includes a portion whose cross section expands with a step with respect to a direction in which the material gas flows and the deposition film forming apparatus further includes a cleaning gas flow device for causing the cleaning gas to directly flow into a region closer to the exhaust device side than the step of the exhaust gas flow path, a deposition film forming method using the deposition film forming apparatus and a method of manufacturing an electrophotographic photosensitive member using the deposition film forming method.

Abstract: An electrophotographic photosensitive member is disclosed which has a change layer consisting of five or more a-SiC intermediate layers, provided between an a-Si photoconductive layer and an a-SiC surface layer. Where two layers contiguous to each other in which C/(Si+C) is from 0.35 to 0.65 are selected from among the a-SiC intermediate layers included in the change layer, the rate of increase between the C/(Si+C) of an a-SiC intermediate layer on the photoconductive layer side and the C/(Si+C) of an a-SiC intermediate layer on the surface layer side (i.e., the rate of increase between layers) is 19% or less.

Abstract: An electrophotographic photosensitive member is disclosed which has a change layer consisting of five or more a-SiC intermediate layers, provided between an a-Si photoconductive layer and an a-SiC surface layer. Where two layers contiguous to each other in which C/(Si+C) is from 0.35 to 0.65 are selected from among the a-SiC intermediate layers included in the change layer, the rate of increase between the C/(Si+C) of an a-SiC intermediate layer on the photoconductive layer side and the C/(Si+C) of an a-SiC intermediate layer on the surface layer side (i.e., the rate of increase between layers) is 19% or less.

Abstract: A negatively-chargeable electrophotographic photosensitive member, has, between a cylindrical substrate and a photoconductive layer, a first lower-part layer formed of a non-single crystal material containing silicon atoms and a second lower-part layer formed of a non-single crystal material containing silicon atoms, and on its photoconductive layer has an upper-part layer formed of a non-single crystal material containing silicon atoms. The first lower-part layer is a layer containing a periodic-table Group 13 element, and the upper-part layer has a region capable of retaining electrification charges.

Abstract: The present invention provides a deposition film forming apparatus including a reaction container, an exhaust device and an exhaust gas flow path for causing a material gas to flow from the reaction container to the exhaust device, wherein the exhaust gas flow path includes a portion whose cross section expands with a step with respect to a direction in which the material gas flows and the deposition film forming apparatus further includes a cleaning gas flow device for causing the cleaning gas to directly flow into a region closer to the exhaust device side than the step of the exhaust gas flow path, a deposition film forming method using the deposition film forming apparatus and a method of manufacturing an electrophotographic photosensitive member using the deposition film forming method.

Abstract: Provided are a negatively-chargeable electrophotographic photosensitive member, an image forming process and an electrophotographic apparatus. The electrophotographic photosensitive member has, between its cylindrical substrate and photoconductive layer, a first lower-part layer formed of a non-single crystal material containing silicon atoms and a second lower-part layer formed of a non-single crystal material containing silicon atoms, and has, on its photoconductive layer, an upper-part layer formed of a non-single crystal material containing silicon atoms. The first lower-part layer is a layer containing a periodic-table Group 13 element, and the upper-part layer has a region capable of retaining electrification charges.

Abstract: In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.

Abstract: In a plasma treatment method of and apparatus for treating the surface of a treatment target substrate by utilizing glow discharge produced by supplying high-frequency power into an inside-evacuated reactor through a high-frequency power supply means, a plurality of impedance regulation means for regulating impedances on the side of the reactor and on the side of the high-frequency power supply means are provided correspondingly to the impedances of a plurality of reactors, and the high-frequency power is supplied into the reactors via the impedance regulation means corresponding to the reactors. Plasma treatment can be made in a good efficiency and a low cost on a plurality of reactors having different impedances.

Abstract: An electrophotographic photosensitive member is provided minimizing the absorption of image exposure having a short wavelength in a surface layer and keeping good electrophotographic properties including resolving power. The electrophotographic photosensitive member includes a conductive substrate, and a photoconductive layer and a surface region layer sequentially superimposed on the conductive substrate. The surface region layer is composed of a non-single-crystal silicon nitride film containing an Group element in the periodic table and a carbon atom and using at least a silicon atom and a nitrogen atom as base materials. In the surface region layer, the Group 13 element content with respect to the total amount of constituent atoms has distribution having at least two local maximum values in the thickness direction, and an the average concentration of nitrogen atoms is 30 atm % to 70 atm %.

Abstract: The invention provides a process for producing a negative-charging electrophotographic photosensitive member which can improve the adherence between a first layer and a second layer without lowering the effect of lessening image defects and realize a reduction in overall costs, a negative-charging electrophotographic photosensitive member produced by the process, and an electrophotographic apparatus. In the process for producing a negative-charging electrophotographic photosensitive member, a first layer is deposited on a substarte, at least the vertexes of protuberances are removed, the substrate with the first layer deposited theron is placed in a film forming furnace, the first layer surface is plasma-treated with a gas containing at least a Group 13 element in the periodic table and a dilution gas composed of at least one selected from hydrogen, argon and helium, and a layer formed of a non-single-crystal material is deposited as the second layer on the first layer.

Abstract: To provide a high-image-quality electrophotographic photosensitive member having a high sensitivity for a wavelength close to 380 to 500 nm, remarkable image resolution property in which absorption of the wavelength is hardly recognized, working-environment characteristic and high safety and superior in abrasion resistance and fabrication easiness and reducing optical memories and an electrophotographic apparatus using the high-image-quality electrophotographic photosensitive member. In the case of an electrophotographic photosensitive member having a substrate, photoconductive layer formed on the substrate and surface layer formed on the photoconductive layer and using silicon and nitrogen atoms as base material and containing an amorphous material containing at least oxygen atoms, the surface layer contains nitrogen atoms as an average concentration shown by the following expression (1) and contains oxygen atoms by the maximum value Omax of the number of oxygen atoms in the thickness direction: 0.

Abstract: Provided is an electrophotographic photosensitive member having a photoconductive layer on an electrically conductive substrate, the photoconductive layer being formed from a non-single-crystal material constituted by at least silicon atoms as a base material, and a non-single-crystal layer region constituted by silicon atoms and carbon atoms as base materials, the non-single-crystal layer region being laminated on the photoconductive layer, in which the content distribution of the oxygen atoms to a total amount of component atoms in a thickness direction within the non-single-crystal layer region has a peak.

Abstract: An electrophotographic photosensitive member is provided which can keep at a minimum the absorption of image exposure light of 380 to 500 nm in wavelength in its surface layer and concurrently can satisfactorily keep electrophotographic properties including resolving power. The electrophotographic photosensitive member has a substrate, and a photoconductive layer and a surface layer in this order provided on the substrate. The surface layer includes an amorphous material composed chiefly of silicon atoms and nitrogen atoms and containing at least oxygen atoms and carbon atoms, and the ratios of the numbers of the respective oxygen atoms, carbon atoms and nitrogen atoms to the total number of oxygen atoms, carbon atoms and nitrogen atoms contained in the amorphous material are each within a specific range.

Abstract: An electrophotographic photosensitive member is provided in which electrophotographic properties including resolving power have been improved with minimized absorption of image exposure light at a short wavelength in a surface layer. The electrophotographic photosensitive member includes a photoconductive layer composed of a non-single-crystal silicon film and a surface region layer composed of a non-single-crystal silicon nitride film containing silicon atoms and nitrogen atoms, superimposed on a conductive substrate. The surface region layer has a gradient-composition layer in which the composition ratio between silicon atoms and nitrogen atoms is changed and a surface layer in which the composition ratio between them is constant. The gradient-composition layer and surface region layer contain a Group 13 element, and the content distribution of the element in the thickness direction of each layer has at least one local maximum value.

Abstract: An electrophotographic photosensitive member is provided minimizing the absorption of image exposure having a short wavelength in a surface layer and keeping good electrophotographic properties including resolving power. The electrophotographic photosensitive member includes a conductive substrate, and a photoconductive layer and a surface region layer sequentially superimposed on the conductive substrate. The surface region layer is composed of a non-single-crystal silicon nitride film containing an Group element in the periodic table and a carbon atom and using at least a silicon atom and a nitrogen atom as base materials. In the surface region layer, the Group 13 element content with respect to the total amount of constituent atoms has distribution having at least two local maximum values in the thickness direction, and an the average concentration of nitrogen atoms is 30 atm % to 70 atm %.

Abstract: An electrophotographic photosensitive member is provided which can keep at a minimum the absorption of image exposure light of 380 to 500 nm in wavelength in its surface layer and concurrently can satisfactorily keep electrophotographic properties including resolving power. The electrophotographic photosensitive member has a substrate, and a photoconductive layer and a surface layer in this order provided on the substrate. The surface layer includes an amorphous material composed chiefly of silicon atoms and nitrogen atoms and containing at least oxygen atoms and carbon atoms, and the ratios of the numbers of the respective oxygen atoms, carbon atoms and nitrogen atoms to the total number of oxygen atoms, carbon atoms and nitrogen atoms contained in the amorphous material are each within a specific range.

Abstract: The invention provides a process for producing a negative-charging electrophotographic photosensitive member which can improve the adherence between a first layer and a second layer without lowering the effect of lessening image defects and realize a reduction in overall costs, a negative-charging electrophotographic photosensitive member produced by the process, and an electrophotographic apparatus. In the process for producing a negative-charging electrophotographic photosensitive member, a first layer is deposited on a substarte, at least the vertexes of protuberances are removed, the substrate with the first layer deposited theron is placed in a film forming furnace, the first layer surface is plasma-treated with a gas containing at least a Group 13 element in the periodic table and a dilution gas composed of at least one selected from hydrogen, argon and helium, and a layer formed of a non-single-crystal material is deposited as the second layer on the first layer.

Abstract: An electrophotographic photosensitive member production process is provided having the steps of placing a cylindrical substrate having a conductive surface in a first film-forming chamber, and decomposing a source gas with high-frequency power to deposit on the cylindrical substrate a first layer formed of a non-single-crystal material, taking out of the first film-forming chamber the cylindrical substrate with the first layer deposited thereon, and placing the cylindrical substrate with the first layer deposited thereon in a second film-forming chamber, and decomposing a source gas with a high-frequency power to deposit on the first layer a second layer having an upper-part blocking layer formed of a non-single-crystal material. Even where abnormal growth portions called spherical protuberances are present on the photosensitive member surface, they can be made not to appear on images, and image defects can vastly be remedied.