Abstract: An electronic component unit includes a substrate including principal surfaces opposing each other and side surfaces between the principal surfaces, and components mounted on the principal surface of the substrate. The side surfaces include first side surfaces formed before the components are mounted and second side surfaces formed after the components are mounted. As viewed from a line normal to the principal surface of the substrate, distances between the first side surfaces and the components are different from distances between the second side surfaces and the components.

Abstract: An encapsulating resin composition contains a thermosetting resin component, a curing accelerator, an inorganic filler, an ion trapping agent, and an aromatic monocarboxylic acid having one or more electron-withdrawing functional groups selected from a nitro group and a cyano group. The encapsulating resin composition is solid at 25° C., and has a sulfur content, measured by X-ray fluorescence analysis, of 0.1 mass % or less in terms of SO3.

Abstract: A method of producing electronic components each including a substrate-type terminal and a device connected to the substrate-type terminal including a substrate body with first and second principal surfaces opposite to each other and an electrode configured to be connected to the device on the first principal surface, wherein the device is disposed on the first principal surface, includes forming grooves in a substrate from one of the first and second principal surfaces of the substrate such that the substrate is divided into the substrate-type terminals, the grooves each having a depth less than a thickness of the substrate, cutting the substrate from another principal surface opposite to the principal surface of the substrate body such that the grooves penetrate through the substrate in a thickness direction thereof, and mounting the device on each of the first principal surfaces.

Abstract: A method of producing electronic components each including a substrate-type terminal and a device connected to the substrate-type terminal is performed such that the substrate-type terminal includes a substrate body including a rectangular or substantially rectangular first principal surface extending in first and second directions perpendicular or substantially perpendicular to each other. The device is disposed on the first principal surface. The method includes supporting a substrate that is to become an assembly in which the plurality of substrate-type terminals are arranged in a matrix using a first support member, cutting the substrate supported by the first support member into the plurality of substrate-type terminals, and mounting the device on the first principal surface of the substrate body of each of the plurality of substrate-type terminals obtained by cutting.

Abstract: A sealing epoxy resin composition contains a phosphonium salt shown in Formula (1), an epoxy resin, a hardening agent, and an inorganic filler. In Formula (1), R1-R3 each represent an aryl group having 6 to 12 carbon atoms, R4 represents an alkyl group having 1 to 4 carbon atoms, R6 and R8 each represent either a carboxyl group or a hydroxyl group, R5 and R7 each represent either hydrogen or an alkyl group having 1 to 4 carbon atoms, R9 and R11 represent hydrogen, R10 represents either a carboxyl group or a hydroxyl group, and the relation of r?1 is satisfied.

Abstract: An encapsulating resin composition contains a thermosetting resin component, a curing accelerator, an inorganic filler, an ion trapping agent, and an aromatic monocarboxylic acid having one or more electron-withdrawing functional groups selected from a nitro group and a cyano group. The encapsulating resin composition is solid at 25° C., and has a sulfur content, measured by X-ray fluorescence analysis, of 0.1 mass % or less in terms of SO3.

Abstract: In a semiconductor device manufacturing method, a target object including a multilayer film and a mask formed on the multilayer film is prepared in a processing chamber of a plasma processing apparatus. The multilayer film is formed by alternately stacking a silicon oxide film and a silicon nitride film. The multilayer film is etched by supplying a processing gas containing hydrogen gas, hydrogen bromide gas, nitrogen trifluoride gas and at least one of hydrocarbon gas, fluorohydrocarbon gas and fluorocarbon gas into the processing chamber of the plasma processing apparatus and generating a plasma of the processing gas in the processing chamber.

Abstract: A sealing epoxy resin composition contains a phosphonium salt shown in Formula (1), an epoxy resin, a hardening agent, and an inorganic filler. In Formula (1), R1-R3 each represent an aryl group having 6 to 12 carbon atoms, R4 represents an alkyl group having 1 to 4 carbon atoms, R6 and R8 each represent either a carboxyl group or a hydroxyl group, R5 and R7 each represent either hydrogen or an alkyl group having 1 to 4 carbon atoms, R9 and R11 represent hydrogen, R10 represents either a carboxyl group or a hydroxyl group, and the relation of r?1 is satisfied.

Abstract: A main etching process of forming a recess portion in a multilayer film having a laminated film where a first film and a second film having different relative permitivities are alternately formed on a base silicon film to a preset depth and an over etching process of forming the recess portion until the base silicon film is exposed are performed by introducing a processing gas including a CF-based gas and an oxygen gas and by performing a plasma etching process. In the over etching process, a first over etching process where a flow rate ratio of the oxygen gas to the CF-based gas is increased as compared to the main etching process and a second over etching process where the flow rate ratio of the oxygen gas to the CF-based gas is reduced as compared to the first over etching process are repeatedly performed two or more times.

Abstract: Provided are a plasma processing method and a plasma processing apparatus which may form a protective film on the surface of an etching stop layer and suppress clogging of openings of holes when etching an oxide layer are provided. The plasma processing method forms a plurality of holes having different depths in multi-layered films that include an oxide layer, a plurality of etching stop layers made of tungsten, and a mask layer. The plasma processing method includes an etching process in which a processing gas is supplied to generate plasma such that etching is performed from the top surface of the oxide layer to the plurality of etching stop layers so as to form hole having different depths in the oxide layer. Here, the processing gas includes a fluorocarbon-based gas, a rare gas, oxygen, and nitrogen.

Abstract: A main etching process of forming a recess portion in a multilayer film having a laminated film where a first film and a second film having different relative permitivities are alternately formed on a base silicon film to a preset depth and an over etching process of forming the recess portion until the base silicon film is exposed are performed by introducing a processing gas including a CF-based gas and an oxygen gas and by performing a plasma etching process. In the over etching process, a first over etching process where a flow rate ratio of the oxygen gas to the CF-based gas is increased as compared to the main etching process and a second over etching process where the flow rate ratio of the oxygen gas to the CF-based gas is reduced as compared to the first over etching process are repeatedly performed two or more times.

Abstract: In a semiconductor device manufacturing method, a target object including a multilayer film and a mask formed on the multilayer film is prepared in a processing chamber of a plasma processing apparatus. The multilayer film is formed by alternately stacking a silicon oxide film and a silicon nitride film. The multilayer film is etched by supplying a processing gas containing hydrogen gas, hydrogen bromide gas, nitrogen trifluoride gas and at least one of hydrocarbon gas, fluorohydrocarbon gas and fluorocarbon gas into the processing chamber of the plasma processing apparatus and generating a plasma of the processing gas in the processing chamber.

Abstract: Provided are a plasma processing method and a plasma processing apparatus which may form a protective film on the surface of an etching stop layer and suppress clogging of openings of holes when etching an oxide layer are provided. The plasma processing method forms a plurality of holes having different depths in multi-layered films that include an oxide layer, a plurality of etching stop layers made of tungsten, and a mask layer. The plasma processing method includes an etching process in which a processing gas is supplied to generate plasma such that etching is performed from the top surface of the oxide layer to the plurality of etching stop layers so as to form hole having different depths in the oxide layer. Here, the processing gas includes a fluorocarbon-based gas, a rare gas, oxygen, and nitrogen.

Abstract: A direction change of space formed in an etching target layer can be suppressed while maintaining an etching selectivity for the etching target layer against a mask. A semiconductor device manufacturing method MT includes exciting a first gas by supplying the first gas containing a fluorocarbon gas, a fluorohydrocarbon gas and an oxygen gas into a processing chamber 12 (ST2); and exciting a second gas by supplying the second gas containing an oxygen gas and a rare gas into the processing chamber (ST3), and a cycle including the exciting of the first gas (ST2) and the exciting of the second gas (ST3) is repeated multiple times.

Abstract: In a semiconductor device manufacturing method, a target object including a multilayer film and a mask formed on the multilayer film is prepared in a processing chamber of a plasma processing apparatus. The multilayer film is formed by alternately stacking a silicon oxide film and a silicon nitride film. The multilayer film is etched by supplying a processing gas containing hydrogen gas, hydrogen bromide gas, nitrogen trifluoride gas and at least one of hydrocarbon gas, fluorohydrocarbon gas and fluorocarbon gas into the processing chamber of the plasma processing apparatus and generating a plasma of the processing gas in the processing chamber.

Abstract: An electronic component unit includes a substrate including principal surfaces opposing each other and side surfaces between the principal surfaces, and components mounted on the principal surface of the substrate. The side surfaces include first side surfaces formed before the components are mounted and second side surfaces formed after the components are mounted. As viewed from a line normal to the principal surface of the substrate, distances between the first side surfaces and the components are different from distances between the second side surfaces and the components.

Abstract: A direction change of space formed in an etching target layer can be suppressed while maintaining an etching selectivity for the etching target layer against a mask. A semiconductor device manufacturing method MT includes exciting a first gas by supplying the first gas containing a fluorocarbon gas, a fluorohydrocarbon gas and an oxygen gas into a processing chamber 12 (ST2); and exciting a second gas by supplying the second gas containing an oxygen gas and a rare gas into the processing chamber (ST3), and a cycle including the exciting of the first gas (ST2) and the exciting of the second gas (ST3) is repeated multiple times.

Abstract: In a semiconductor device manufacturing method, a target object including a multilayer film and a mask formed on the multilayer film is prepared in a processing chamber of a plasma processing apparatus. The multilayer film is formed by alternately stacking a silicon oxide film and a silicon nitride film. The multilayer film is etched by supplying a processing gas containing hydrogen gas, hydrogen bromide gas, nitrogen trifluoride gas and at least one of hydrocarbon gas, fluorohydrocarbon gas and fluorocarbon gas into the processing chamber of the plasma processing apparatus and generating a plasma of the processing gas in the processing chamber.

Abstract: A method of producing electronic components each including a substrate-type terminal and a device connected to the substrate-type terminal is performed such that the substrate-type terminal includes a substrate body including a rectangular or substantially rectangular first principal surface extending in first and second directions perpendicular or substantially perpendicular to each other. The device is disposed on the first principal surface. The method includes supporting a substrate that is to become an assembly in which the plurality of substrate-type terminals are arranged in a matrix using a first support member, cutting the substrate supported by the first support member into the plurality of substrate-type terminals, and mounting the device on the first principal surface of the substrate body of each of the plurality of substrate-type terminals obtained by cutting.

Abstract: A method of producing electronic components each including a substrate-type terminal and a device connected to the substrate-type terminal including a substrate body with first and second principal surfaces opposite to each other and an electrode configured to be connected to the device on the first principal surface, wherein the device is disposed on the first principal surface, includes forming grooves in a substrate from one of the first and second principal surfaces of the substrate such that the substrate is divided into the substrate-type terminals, the grooves each having a depth less than a thickness of the substrate, cutting the substrate from another principal surface opposite to the principal surface of the substrate body such that the grooves penetrate through the substrate in a thickness direction thereof, and mounting the device on each of the first principal surfaces.