Patents by Inventor KAZUTO OHKOSHI

KAZUTO OHKOSHI has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MANUFACTURING METHOD FOR CERAMIC SINTERED BODY AND CERAMIC SINTERED BODY
    Publication number: 20230113344
    Abstract: A dense ceramic sintered body is appropriately manufactured. A manufacturing method for the ceramic sintered body includes: a step of performing heat treatment on a ceramic green body as a green body of ceramic powder under a first condition; a step of performing heat treatment, under a second condition with a higher pressure than the first condition, on the ceramic green body subjected to the heat treatment under the first condition; and a step of performing heat treatment, under a third condition with a higher pressure than the second condition, on the ceramic green body subjected to the heat treatment under the second condition to manufacture the ceramic sintered body.
    Type: Application
    Filed: November 3, 2022
    Publication date: April 13, 2023
    Applicant: AGC Inc.
    Inventors: Kazuto OHKOSHI, Nobuhiro SHINOHARA
  • Light-transmitting ceramic sintered body and method for producing same
    Patent number: 11267761
    Abstract: The present invention relates to a light-transmitting ceramic sintered body which contains air voids having pore diameters of 1 ?m or more but less than 5 ?m at a density within the range of from 10 voids/mm3 to 4,000 voids/mm3 (inclusive), while having a closed porosity of from 0.01% by volume to 1.05% by volume (inclusive). With respect to this light-transmitting ceramic sintered body, a test piece having a thickness of 1.90 mm has an average transmittance of 70% or more in the visible spectrum wavelength range of 500-900 nm, and the test piece having a thickness of 1.90 mm has a sharpness of 60% or more at a comb width of 0.5 mm.
    Type: Grant
    Filed: September 11, 2019
    Date of Patent: March 8, 2022
    Assignee: AGC Inc.
    Inventors: Shuhei Ogawa, Naomichi Miyakawa, Yasuo Shinozaki, Haruhiko Yoshino, Kazunari Tohyama, Kazuto Ohkoshi
  • Thin film of metal oxide, organic electroluminescent device including the thin film, photovoltaic cell including the thin film and organic photovoltaic cell including the thin film
    Patent number: 11094909
    Abstract: A thin film of amorphous metal oxide includes zinc (Zn), silicon (Si) and oxygen (O), the atomic ratio of Zn/(Zn+Si) being 0.30 to 0.95.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: August 17, 2021
    Assignee: JAPAN SCIENCE AND TECHNOLOGY AGENCY
    Inventors: Hideo Hosono, Yoshitake Toda, Toshinari Watanabe, Naomichi Miyakawa, Kazuhiro Ito, Satoru Watanabe, Akira Mitsui, Kazuto Ohkoshi
  • SEMICONDUCTOR COMPOUND, SEMICONDUCTOR DEVICE AND LAMINATE HAVING LAYER OF SEMICONDUCTOR COMPOUND, AND TARGET
    Publication number: 20200287002
    Abstract: An oxide-based semiconductor compound including metal cations and oxygen, wherein hydride ions H? originally bonded with the metal cations have been replaced with fluorine ions F? and at least one of the fluorine ions F? is bonded with one to three of the metal cations.
    Type: Application
    Filed: May 20, 2020
    Publication date: September 10, 2020
    Applicants: AGC Inc., TOKYO INSTITUTE OF TECHNOLOGY
    Inventors: Hideo HOSONO, Junghwan Kim, Joonho Bang, Hideya Kumomi, Satoru Watanabe, Kazuto Ohkoshi, Naomichi Miyakawa, Nao Ishibashi, Kunio Masumo, Nobuhiro Nakamura
  • THIN FILM TRANSISTOR
    Publication number: 20200287051
    Abstract: A thin film transistor of a top-gate-coplanar type includes a source, a drain, a gate, and a semiconductor layer, wherein the semiconductor layer has a first low-resistance region for the source and a second low-resistance region for the drain, wherein the source and the drain are electrically connected through the first low-resistance region, the semiconductor layer, and the second low-resistance region, and wherein the semiconductor layer is formed of an oxide-based semiconductor containing gallium (Ga), zinc (Zn), and tin (Sn).
    Type: Application
    Filed: May 20, 2020
    Publication date: September 10, 2020
    Applicant: AGC Inc.
    Inventors: Kunio MASUMO, Nao ISHIBASHI, Nobuhiro NAKAMURA, Satoru WATANABE, Kazuto OHKOSHI, Naomichi MIYAKAWA
  • LIGHT-TRANSMITTING CERAMIC SINTERED BODY AND METHOD FOR PRODUCING SAME
    Publication number: 20200002231
    Abstract: The present invention relates to a light-transmitting ceramic sintered body which contains air voids having pore diameters of 1 ?m or more but less than 5 ?m at a density within the range of from 10 voids/mm3 to 4,000 voids/mm3 (inclusive), while having a closed porosity of from 0.01% by volume to 1.05% by volume (inclusive). With respect to this light-transmitting ceramic sintered body, a test piece having a thickness of 1.90 mm has an average transmittance of 70% or more in the visible spectrum wavelength range of 500-900 nm, and the test piece having a thickness of 1.90 mm has a sharpness of 60% or more at a comb width of 0.5 mm.
    Type: Application
    Filed: September 11, 2019
    Publication date: January 2, 2020
    Applicant: AGC Inc.
    Inventors: Shuhei OGAWA, Naomichi MIYAKAWA, Yasuo SHINOZAKI, Haruhiko YOSHINO, Kazunari TOHYAMA, Kazuto OHKOSHI
  • THIN FILM OF METAL OXIDE, ORGANIC ELECTROLUMINESCENT DEVICE INCLUDING THE THIN FILM, PHOTOVOLTAIC CELL INCLUDING THE THIN FILM AND ORGANIC PHOTOVOLTAIC CELL INCLUDING THE THIN FILM
    Publication number: 20160285027
    Abstract: A thin film of amorphous metal oxide includes zinc (Zn), silicon (Si) and oxygen (O), the atomic ratio of Zn/(Zn+Si) being 0.30 to 0.95.
    Type: Application
    Filed: June 10, 2016
    Publication date: September 29, 2016
    Applicants: JAPAN SCIENCE AND TECHNOLOGY AGENCY, TOKYO INSTITUTE OF TECHNOLOGY, ASAHI GLASS COMPANY, LIMITED
    Inventors: HIDEO HOSONO, YOSHITAKE TODA, TOSHINARI WATANABE, NAOMICHI MIYAKAWA, KAZUHIRO ITO, SATORU WATANABE, AKIRA MITSUI, KAZUTO OHKOSHI