Abstract: A method of manufacturing a light receiving device 1 includes: providing a resin layer 14 containing a photo curing resin on a transparent substrate 13 where a plurality of transparent substrate portions 13A are integrated so that the resin layer covers the transparent substrate 13; selectively irradiating the resin layer 14 with light, followed by a developing process, so that the resin layer 14 remains in regions of the transparent substrate 13 which surround portions corresponding to regions facing light receiving portions 11 in the transparent substrate portions 13A; dividing the transparent substrate 13 into units of transparent substrate portions 13A so that a plurality of transparent substrate portions 13A are obtained; dividing the base substrate 12 into units of base substrate portions 12A so that a plurality of base substrate portions 12A are obtained; and joining the base substrate portions 12A and the transparent substrate portions 13A via the resin layer 14.

Abstract: A method of manufacturing a light receiving device 1 includes: providing a resin layer 14 containing a photo curing resin on a transparent substrate 13 where a plurality of transparent substrate portions 13A are integrated so that the resin layer covers the transparent substrate 13; selectively irradiating the resin layer 14 with light, followed by a developing process, so that the resin layer 14 remains in regions of the transparent substrate 13 which surround portions corresponding to regions facing light receiving portions 11 in the transparent substrate portions 13A; dividing the transparent substrate 13 into units of transparent substrate portions 13A so that a plurality of transparent substrate portions 13A are obtained; dividing the base substrate 12 into units of base substrate portions 12A so that a plurality of base substrate portions 12A are obtained; and joining the base substrate portions 12A and the transparent substrate portions 13A via the resin layer 14.

Abstract: Conductive hardening resin for a semiconductor device of the present invention contains metal powder for providing electric conduction between electrodes positioned on the front of a semiconductor chip and a wiring material including lead terminals via a conductive plate. The resin has a modulus of elasticity of 2.0×109 Pa or below when hardened. The resin prevents the contact resistance of the metal plate, lead terminals and semiconductor chip from increasing in the event of temperature cycling tests and a pressure cooker tests. Further, the resin frees the metal plate and chip from peel-off and corrosion, respectively.

Abstract: Conductive hardening resin for a semiconductor device of the present invention contains metal powder for providing electric conduction between electrodes positioned on the front of a semiconductor chip and a wiring material including lead terminals via a conductive plate. The resin has a modulus of elasticity of 2.0×109 Pa or below when hardened. The resin prevents the contact resistance of the metal plate, lead terminals and semiconductor chip from increasing in the event of temperature cycling tests and a pressure cooker tests. Further, the resin frees the metal plate and chip from peel-off and corrosion, respectively.

Abstract: Conductive hardening resin for a semiconductor device of the present invention contains metal powder for providing electric conduction between electrodes positioned on the front of a semiconductor chip and a wiring material including lead terminals via a conductive plate. The resin has a modulus of elasticity of 2.0×109 Pa or below when hardened. The resin prevents the contact resistance of the metal plate, lead terminals and semiconductor chip from increasing in the event of temperature cycling tests and a pressure cooker tests. Further, the resin frees the metal plate and chip from peel-off and corrosion, respectively.

Abstract: Conductive hardening resin for a semiconductor device of the present invention contains metal powder for providing electric conduction between electrodes positioned on the front of a semiconductor chip and a wiring material including lead terminals via a conductive plate. The resin has a modulus of elasticity of 2.0×109 Pa or below when hardened. The resin prevents the contact resistance of the metal plate, lead terminals and semiconductor chip from increasing in the event of temperature cycling tests and a pressure cooker tests. Further, the resin frees the metal plate and chip from peel-off and corrosion, respectively.