Abstract: According to one embodiment, a medical information processing apparatus includes processing circuitry configured to derive an index value with respect to noise included in data associated with magnetic resonance signals collected by each of a plurality of reception coils, adjust a degree to which noise is removed from the data associated with the magnetic resonance signals based on the derived index value, remove noise from the data associated with the magnetic resonance signals based on the adjusted degree, and perform compositing of the data associated with the magnetic resonance signals from which noise has been removed.

Abstract: Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.

Abstract: A plasma etching apparatus 11 includes a mounting table that holds a semiconductor substrate W thereon; a first heater 18a that heats a central region of the semiconductor substrate W held on the mounting table 14; a second heater 18b that heats an edge region around the central region of the semiconductor substrate W held on the mounting table 14; a reactant gas supply unit 13 that supplies a reactant gas for a plasma process toward the central region of the semiconductor substrate W held on the mounting table 14; and a control unit 20 that performs a plasma etching process on the semiconductor substrate W while controlling the first heater 18a and the second heater 18b to heat the central region and the edge region of the processing target substrate W held on the mounting table 14 to different temperatures.

Abstract: Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.

Abstract: A plasma processing apparatus includes a processing container in which a plasma processing is performed on a substrate to be processed, a holding stage which is disposed in the processing container and holds thereon the substrate to be processed, a dielectric plate which is provided at a location facing the holding stage and transmits a microwave into the processing container, and a reactive gas supply unit which supplies a reactive gas for plasma processing toward the central region of the substrate to be processed held by the holding stage. Here, the reactive gas supply unit includes an injector base, which is disposed at a location more recessed inside the dielectric plate than a wall surface of the dielectric plate facing the holding stage. A supply hole, which supplies a reactive gas for plasma processing into the processing container, is formed in the injector base.

Abstract: Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.

Abstract: Uniformity of a plasma process on a surface of a substrate is to be improved. In a plasma processing apparatus that processes a substrate by generating plasma from a processing gas introduced in a processing container, a ratio between an introducing amount of the processing gas introduced to a center portion of the substrate received in the processing container and an introducing amount of the processing gas introduced to a peripheral portion of the substrate received in the processing container is changed during a plasma process. Accordingly, a variation in an etching rate or the like between the center portion and the peripheral portion of the substrate may be reduced. Therefore, uniformity of the plasma process on the surface of the substrate is improved.

Abstract: A plasma etching apparatus 11 includes a mounting table that holds a semiconductor substrate W thereon; a first heater 18a that heats a central region of the semiconductor substrate W held on the mounting table 14; a second heater 18b that heats an edge region around the central region of the semiconductor substrate W held on the mounting table 14; a reactant gas supply unit 13 that supplies a reactant gas for a plasma process toward the central region of the semiconductor substrate W held on the mounting table 14; and a control unit 20 that performs a plasma etching process on the semiconductor substrate W while controlling the first heater 18a and the second heater 18b to heat the central region and the edge region of the processing target substrate W held on the mounting table 14 to different temperatures.

Abstract: A plasma processing apparatus includes a processing container in which a plasma processing is performed on a substrate to be processed, a holding stage which is disposed in the processing container and holds thereon the substrate to be processed, a dielectric plate which is provided at a location facing the holding stage and transmits a microwave into the processing container, and a reactive gas supply unit which supplies a reactive gas for plasma processing toward the central region of the substrate to be processed held by the holding stage. Here, the reactive gas supply unit includes an injector base, which is disposed at a location more recessed inside the dielectric plate than a wall surface of the dielectric plate facing the holding stage. A supply hole, which supplies a reactive gas for plasma processing into the processing container, is formed in the injector base.