Patents by Inventor Kazuto Yagi
Kazuto Yagi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10161032Abstract: Provided is a high-purity titanium ingot having a purity, excluding an additive element and gas components, of 99.99 mass % or more, wherein at least one nonmetallic element selected from S, P, and B is contained in a total amount of 0.1 to 100 mass ppm as the additive component and the variation in the content of the nonmetallic element between the top, middle, and bottom portions of the ingot is within ±200%. Provided is a method of manufacturing a titanium ingot containing a nonmetallic element in an amount of 0.1 to 100 mass ppm, wherein S, P, or B, which is a nonmetallic element, is added to molten titanium as an intermetallic compound or a master alloy to produce a high-purity titanium ingot having a purity, excluding an additive element and gas components, of 99.99 mass % or more.Type: GrantFiled: February 13, 2013Date of Patent: December 25, 2018Assignee: JX Nippon Mining & Metals CorporationInventors: Kazuto Yagi, Eiji Hino, Yuichiro Shindo
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Patent number: 9725814Abstract: High purity manganese having a purity of 3N (99.9%) or more, wherein number of non-metal inclusions with a size of 0.5 ?m or more is 50000 or less per 1 g of the high purity manganese. A method for producing high purity manganese, wherein refining is performed using a raw material (secondary raw material) obtained by acid-washing a manganese raw material (primary raw material) so that the produced high purity manganese has a purity of 3N (99.9%) or more, and number of non-metal inclusions with a size of 0.5 ?m or more is 50000 or less per 1 g of the high purity manganese. The present invention provides a method for producing high purity metal manganese from commercially available manganese, and aims to obtain high purity metal manganese having a low LPC.Type: GrantFiled: July 18, 2012Date of Patent: August 8, 2017Assignee: JX Nippon Mining & Metals CorporationInventors: Kazuto Yagi, Yuichiro Shindo, Eiji Hino
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Patent number: 9666418Abstract: A high-purity titanium target for sputtering containing 0.5 to 5 mass ppm of S as an additive component, wherein the purity of the target excluding additive components and gas components is 99.995 mass percent or higher. An object of this invention is to provide a high-quality titanium target for sputtering which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and is capable of stabilizing the sputtering characteristics.Type: GrantFiled: April 27, 2012Date of Patent: May 30, 2017Assignee: JX Nippon Mining & Metals CorporationInventors: Shiro Tsukamoto, Nobuhito Makino, Atsushi Fukushima, Kazuto Yagi, Eiji Hino
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Publication number: 20160032427Abstract: The present invention relates to a method for manufacturing a high purity Mn, the method comprising: placing a Mn raw material in a magnesia crucible to perform melting with the use of a vacuum induction melting furnace (VIM furnace) at a melting temperature of 1240 to 1400° C. under an inert atmosphere of 500 Torr or less; then adding calcium in a range between 0.5 and 2.0% of the weight of Mn to perform deoxidation and desulfurization; casting the resultant in an iron mold after the completion of the deoxidation and desulfurization to manufacture an ingot; then placing the Mn ingot in a skull melting furnace; reducing pressure to 10?5 Torr or less with a vacuum pump; starting heating and keeping the Mn in a molten state for 10 to 60 minutes; and then ending the melting reaction for obtaining a high purity metal Mn. Provided is a method for manufacturing a high purity metal Mn from a commercially available electrolytic Mn.Type: ApplicationFiled: September 8, 2014Publication date: February 4, 2016Inventor: Kazuto Yagi
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Publication number: 20160002749Abstract: The present invention relates to a method for manufacturing a high purity Mn, the method comprising: placing a flake-like electrolytic Mn raw material in a magnesia crucible to perform melting with the use of a vacuum induction melting furnace (VIM furnace) at a melting temperature of 1240 to 1400° C. under an inert atmosphere of 500 Torr or less; then adding calcium in a range between 0.5 and 2.0% of the weight of Mn to perform deoxidation and desulfurization; casting the resultant in an iron mold after the completion of the deoxidation and desulfurization to manufacture an ingot; then placing the Mn ingot into a magnesia crucible to perform melting with the use of a vacuum induction melting furnace (VIM furnace) at a melting temperature, which is adjusted to 1200 to 1450° C. and maintained for 10 to 60 minutes, under an inert atmosphere of 200 Torr or less; casting the resultant in an iron mold to manufacture an ingot; then placing the metal Mn ingot in an alumina crucible; reducing pressure to 0.Type: ApplicationFiled: September 2, 2014Publication date: January 7, 2016Applicant: JX Nippon Mining & Metals CorporationInventor: Kazuto Yagi
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Publication number: 20150021174Abstract: Provided is a high-purity titanium ingot having a purity, excluding an additive element and gas components, of 99.99 mass % or more, wherein at least one nonmetallic element selected from S, P, and B is contained in a total amount of 0.1 to 100 mass ppm as the additive component and the variation in the content of the nonmetallic element between the top, middle, and bottom portions of the ingot is within ±200%. Provided is a method of manufacturing a titanium ingot containing a nonmetallic element in an amount of 0.1 to 100 mass ppm, wherein S, P, or B, which is a nonmetallic element, is added to molten titanium as an intermetallic compound or a master alloy to produce a high-purity titanium ingot having a purity, excluding an additive element and gas components, of 99.99 mass % or more.Type: ApplicationFiled: February 13, 2013Publication date: January 22, 2015Inventors: Kazuto Yagi, Eiji Hino, Yuichiro Shindo
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Publication number: 20140356222Abstract: High purity manganese having a purity of 3N (99.9%) or more, wherein number of non-metal inclusions with a size of 0.5 ?m or more is 50000 or less per 1 g of the high purity manganese. A method for producing high purity manganese, wherein refining is performed using a raw material (secondary raw material) obtained by acid-washing a manganese raw material (primary raw material) so that the produced high purity manganese has a purity of 3N (99.9%) or more, and number of non-metal inclusions with a size of 0.5 ?m or more is 50000 or less per 1 g of the high purity manganese. The present invention provides a method for producing high purity metal manganese from commercially available manganese, and aims to obtain high purity metal manganese having a low LPC.Type: ApplicationFiled: July 18, 2012Publication date: December 4, 2014Applicant: JX NIPPON MINING & METALS CORPORATIONInventors: Kazuto Yagi, Yuichiro Shindo, Eiji Hino
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Publication number: 20140251802Abstract: A high-purity titanium target for sputtering containing 0.5 to 5 mass ppm of S as an additive component, wherein the purity of the target excluding additive components and gas components is 99.995 mass percent or higher. An object of this invention is to provide a high-quality titanium target for sputtering which is free from fractures and cracks during high-power sputtering (high-rate sputtering) and is capable of stabilizing the sputtering characteristics.Type: ApplicationFiled: April 27, 2012Publication date: September 11, 2014Applicant: JX NIPPON MINING & METALS CORPORATIONInventors: Shiro Tsukamoto, Nobuhito Makino, Atsushi Fukushima, Kazuto Yagi, Eiji Hino
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Patent number: 8668785Abstract: Provided is a method of producing high purity ytterbium, wherein the high purity ytterbium is obtained by reducing crude ytterbium oxide in a vacuum with reducing metals composed of metals having a low vapor pressure, and selectively distilling ytterbium. Additionally provided are methods of achieving the high purification of ytterbium which has a high vapor pressure and is hard to refine in a molten state, and high purity ytterbium obtained thereby. Further provided is technology for efficiently and stably obtaining a sputtering target made of high purity material ytterbium, and a thin film for metal gates containing high purity material ytterbium.Type: GrantFiled: September 24, 2008Date of Patent: March 11, 2014Assignee: JX Nippon Mining & Metals CorporationInventors: Yuichiro Shindo, Kazuto Yagi
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Publication number: 20110300017Abstract: Provided are a method for manufacturing high-purity erbium, wherein crude erbium oxide is mixed with reducing metal, erbium is reduced and distilled by heating the mixture in a vacuum, and the distillate is melted in an inert atmosphere to obtain high-purity erbium; and high-purity erbium, wherein the purity excluding rare-earth elements and gas components is 4 N or higher and the oxygen content is 200 wtppm or less. An object of this invention is to provide a method of highly purifying erbium, which has a high vapor pressure and is difficult to be refined in a molten metal state, as well as technology for efficiently and stably providing high-purity erbium obtained with the foregoing method, a sputtering target composed of high-purity erbium, and a metal gate film having high-purity erbium as a main component.Type: ApplicationFiled: January 13, 2010Publication date: December 8, 2011Applicant: JX NIPPON MINING & METALS CORPORATIONInventors: Yuichiro Shindo, Kazuto Yagi
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Publication number: 20100260640Abstract: Provided is a method of producing high purity ytterbium, wherein the high purity ytterbium is obtained by reducing crude ytterbium oxide in a vacuum with reducing metals composed of metals having a low vapor pressure, and selectively distilling ytterbium. Additionally provided are methods of achieving the high purification of ytterbium which has a high vapor pressure and is hard to refine in a molten state, and high purity ytterbium obtained thereby. Further provided is technology for efficiently and stably obtaining a sputtering target made of high purity material ytterbium, and a thin film for metal gates containing high purity material ytterbium.Type: ApplicationFiled: September 24, 2008Publication date: October 14, 2010Applicant: NIPPON MINING AND METALS CO., LTD.Inventors: Yuichiro Shindo, Kazuto Yagi