Abstract: A holder includes a first block having a stopper and a first restrained section and being made from the material which have the insulating property; a second block having a second restrained section and being made from the material which have the insulating property; and a restraining member, wherein the fixed member is surrounded to be sandwiched using the first block and the second block, the first and the second blocks are inserted into a through hole of the base member until the stopper comes in contact with the base member and the blocks are prevented from entering, and the first restrained section and the second restrained section protruding from the through hole are restrained by the restraining member so that the fixed member is fixed to the base member.

Abstract: A plasma CVD apparatus whose discharge electrode is a single line member bent in a U shape in an alternating manner and in which a substrate to be processed is held substantially in parallel to the discharge electrode. The electric field around the electrode becomes stronger and the intensity distribution of this field becomes even. As a result, a product film formed on the substrate surface has a uniform thickness, and the film can be formed at high speeds.

Abstract: A plasma-chemical vapor-phase epitaxy system or a chemical vapor deposition (CVD) system can produce a large thin film of good quality. The CVD system includes a vacuum container having a quartz glass window, a substrate disposed within the vacuum container as opposed to the window, an antenna type discharge electrode disposed outside of the vacuum container as opposed to the window, and a high-frequency power supply for feeding electric power to the same electrode. In this way, by disposing an electrode outside of a container and exciting the reaction gas with high-frequency electromagnetic waves, a large thin film of good quality can be formed.