Patents by Inventor Kazutoshi Iwai
Kazutoshi Iwai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11519074Abstract: A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.Type: GrantFiled: June 29, 2020Date of Patent: December 6, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Kazutoshi Iwai, Nobutaka Mizutani, Yuichiro Inatomi, Takashi Tanaka
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Publication number: 20220290302Abstract: A substrate liquid processing method includes preparing a substrate having a surface including a recess on which a seed layer is stacked; supplying an electroless plating liquid onto the surface of the substrate to fill the recess with the electroless plating liquid while forming a liquid film of the electroless plating liquid on the surface; and adjusting a temperature of the liquid film from a first temperature at which a metal is precipitated on the seed layer to a second temperature lower than the first temperature to fill the recess with the metal starting from a bottom portion of the recess such that a void is not formed therein.Type: ApplicationFiled: August 14, 2020Publication date: September 15, 2022Inventors: Kazutoshi Iwai, Yuichiro Inatomi, Takafumi Niwa
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Patent number: 11230767Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portion 32 by performing a catalyst imparting processing on the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by supplying a plating liquid M1 onto the substrate W. The plating liquid M1 contains an inhibitor which suppresses the plating layer 35 from being precipitated on the non-plateable material portion 31.Type: GrantFiled: August 29, 2017Date of Patent: January 25, 2022Assignee: TOKYO ELECTRON LIMITEDInventors: Yuichiro Inatomi, Takashi Tanaka, Kazutoshi Iwai
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Patent number: 11028483Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portion 32 by performing a catalyst imparting processing on the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by performing a plating processing on the substrate W. Before the imparting of the catalyst, an organic film 36 is formed on the substrate W by supplying an organic liquid L1 onto the substrate W.Type: GrantFiled: August 29, 2017Date of Patent: June 8, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Yuichiro Inatomi, Takashi Tanaka, Kazutoshi Iwai
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Patent number: 11004684Abstract: A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.Type: GrantFiled: January 22, 2019Date of Patent: May 11, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Mitsuaki Iwashita, Takeshi Nagao, Nobutaka Mizutani, Takashi Tanaka, Koichi Yatsuda, Kazutoshi Iwai, Yuichiro Inatomi
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Publication number: 20210108316Abstract: A substrate processing method includes preparing a substrate having, on a surface thereof, a first portion made of a silicon compound including nitrogen and a second portion made of a material different from the first portion; forming a SAM (Self-Assembled Monolayer) on the surface of the substrate; imparting a catalyst to the substrate by supplying a catalyst containing liquid onto the substrate on which the SAM is formed; and performing a plating on the substrate to which the catalyst is imparted. The forming of the SAM is carried out by supplying a SAM forming chemical, which does not have a functional group including nitrogen, onto the substrate.Type: ApplicationFiled: March 22, 2018Publication date: April 15, 2021Inventors: Nobutaka Mizutani, Kazutoshi Iwai
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Publication number: 20200325581Abstract: A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.Type: ApplicationFiled: June 29, 2020Publication date: October 15, 2020Inventors: Kazutoshi Iwai, Nobutaka Mizutani, Yuichiro Inatomi, Takashi Tanaka
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Patent number: 10784111Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is imparted selectively to the plateable material portion 32 by supplying a catalyst solution N1 onto the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by supplying a plating liquid M1 onto the substrate W. A pH of the catalyst solution N1 is previously adjusted such that the plating layer 35 is suppressed from being precipitated on the non-plateable material portion 31 while being facilitated to be precipitated on the plateable material portion 32.Type: GrantFiled: August 29, 2017Date of Patent: September 22, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Yuichiro Inatomi, Takashi Tanaka, Kazutoshi Iwai
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Patent number: 10755973Abstract: A metal wiring layer can be formed within a recess of a substrate and an unnecessary plating layer is not left on a surface of the substrate. A metal wiring layer forming method includes forming a first plating layer 7 as a protection layer at least on a tungsten or tungsten alloy 4 formed on a bottom surface 3a of a recess 3 of a substrate 2; removing an unnecessary plating layer 7a formed on a surface 2a of the substrate 2; and forming a second plating layer 8 on the first plating layer 7 within the recess 3.Type: GrantFiled: August 29, 2017Date of Patent: August 25, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Keiichi Fujita, Kazutoshi Iwai, Nobutaka Mizutani
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Patent number: 10731256Abstract: A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.Type: GrantFiled: April 5, 2017Date of Patent: August 4, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Kazutoshi Iwai, Nobutaka Mizutani, Yuichiro Inatomi, Takashi Tanaka
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Publication number: 20190271084Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portion 32 by performing a catalyst imparting processing on the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by supplying a plating liquid M1 onto the substrate W. The plating liquid M1 contains an inhibitor which suppresses the plating layer 35 from being precipitated on the non-plateable material portion 31.Type: ApplicationFiled: August 29, 2017Publication date: September 5, 2019Inventors: Yuichiro Inatomi, Takashi Tanaka, Kazutoshi Iwai
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Publication number: 20190267242Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is imparted selectively to the plateable material portion 32 by supplying a catalyst solution N1 onto the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by supplying a plating liquid M1 onto the substrate W. A pH of the catalyst solution N1 is previously adjusted such that the plating layer 35 is suppressed from being precipitated on the non-plateable material portion 31 while being facilitated to be precipitated on the plateable material portion 32.Type: ApplicationFiled: August 29, 2017Publication date: August 29, 2019Inventors: Yuichiro Inatomi, Takashi Tanaka, Kazutoshi Iwai
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Publication number: 20190256980Abstract: A substrate W having a non-plateable material portion 31 and a plateable material portion 32 formed on a surface thereof is prepared, and then, a catalyst is selectively imparted to the plateable material portion 32 by performing a catalyst imparting processing on the substrate W. Thereafter, a plating layer 35 is selectively formed on the plateable material portion 32 by performing a plating processing on the substrate W. Before the imparting of the catalyst, an organic film 36 is formed on the substrate W by supplying an organic liquid L1 onto the substrate W.Type: ApplicationFiled: August 29, 2017Publication date: August 22, 2019Inventors: Yuichiro Inatomi, Takashi Tanaka, Kazutoshi Iwai
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Publication number: 20190229016Abstract: A metal wiring layer can be formed within a recess of a substrate and an unnecessary plating layer is not left on a surface of the substrate. A metal wiring layer forming method includes forming a first plating layer 7 as a protection layer at least on a tungsten or tungsten alloy 4 formed on a bottom surface 3a of a recess 3 of a substrate 2; removing an unnecessary plating layer 7a formed on a surface 2a of the substrate 2; and forming a second plating layer 8 on the first plating layer 7 within the recess 3.Type: ApplicationFiled: August 29, 2017Publication date: July 25, 2019Inventors: Keiichi Fujita, Kazutoshi Iwai, Nobutaka Mizutani
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Publication number: 20190157083Abstract: A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.Type: ApplicationFiled: January 22, 2019Publication date: May 23, 2019Inventors: Mitsuaki Iwashita, Takeshi Nagao, Nobutaka Mizutani, Takashi Tanaka, Koichi Yatsuda, Kazutoshi Iwai, Yuichiro Inatomi
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Patent number: 10224202Abstract: A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.Type: GrantFiled: March 30, 2017Date of Patent: March 5, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Mitsuaki Iwashita, Takeshi Nagao, Nobutaka Mizutani, Takashi Tanaka, Koichi Yatsuda, Kazutoshi Iwai, Yuichiro Inatomi
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Patent number: 9966306Abstract: A catalyst adsorbed on a surface of a substrate is bound to the substrate without leaving residues within a recess of the substrate. A catalyst layer forming method includes forming a catalyst layer 22 by supplying a catalyst solution 32 onto a substrate 2 having a recess 2a to adsorb the catalyst 22A onto a surface of the substrate and onto an inner surface of the recess; rinsing the surface of the substrate 2 and an inside of the recess 2a by supplying a rinse liquid; drying the surface of the substrate 2 and the inside of the recess 2a. Further, by supplying a binder solution 34 containing a binder 22B onto the substrate 2, the catalyst 22A on the surface of the substrate 2 is bound to the substrate 2 by the binder 22B.Type: GrantFiled: February 19, 2016Date of Patent: May 8, 2018Assignee: TOKYO ELECTRON LIMITEDInventors: Yuichiro Inatomi, Takashi Tanaka, Nobutaka Mizutani, Yusuke Saito, Kazutoshi Iwai, Mitsuaki Iwashita
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Publication number: 20170292192Abstract: A plating apparatus, a plating method and a recording medium can allow a temperature of a wafer to be uniform within a surface thereof. A plating apparatus 1 includes a substrate holding unit 52 configured to hold a substrate W; a plating liquid supply unit 53 configured to supply a plating liquid M1 to the substrate W; and a solvent supply unit 55a configured to supply a solvent N1 having a different temperature from a temperature of the plating liquid M1 to the substrate W. The solvent N1 is supplied to a preset position on the substrate W from the solvent supply unit 55a after the plating liquid M1 is supplied to the substrate W from the plating liquid supply unit 53.Type: ApplicationFiled: April 5, 2017Publication date: October 12, 2017Inventors: Kazutoshi Iwai, Nobutaka Mizutani, Yuichiro Inatomi, Takashi Tanaka
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Publication number: 20170287713Abstract: A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.Type: ApplicationFiled: March 30, 2017Publication date: October 5, 2017Inventors: Mitsuaki Iwashita, Takeshi Nagao, Nobutaka Mizutani, Takashi Tanaka, Koichi Yatsuda, Kazutoshi Iwai, Yuichiro Inatomi
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Patent number: 9650717Abstract: A pre-treatment method of plating and a plating system can perform a uniform plating process in which sufficient adhesivity on a surface of a substrate is obtained. The pre-treatment method of plating includes a coupling layer forming process of forming a titanium-based coupling layer 21b on the surface of the substrate with a titanium coupling agent; and a coupling layer modification process of modifying a surface of the titanium-based coupling layer 21b with a modifying liquid after the coupling layer forming process.Type: GrantFiled: February 27, 2015Date of Patent: May 16, 2017Assignee: TOKYO ELECTRON LIMITEDInventors: Kazutoshi Iwai, Nobutaka Mizutani, Mitsuaki Iwashita