Abstract: After a first via hole leading to a ferroelectric capacitor structure are formed in an interlayer insulating film by dry etching, a second via hole to expose part of the ferroelectric capacitor structure is formed in a hydrogen diffusion preventing film so as to be aligned with the first via hole by wet etching, and a via hole constructed by the first via hole and the second via hole communicating with each other is formed.

Abstract: In the production of a semiconductor device in which a ferroelectric capacitor is used as a memory, a method of producing the semiconductor device in which the oxidation of a tungsten film embedded in an alignment mark prepared in the form of a groove is prevented includes forming an oxidation-preventing film composed of P—SiN (SiON) to cover the tungsten film prior to the formation of the ferroelectric capacitor, and heat-treating the oxidation-preventing film so as to thermally contract the film in advance.

Abstract: Disclosed is a method of manufacturing a semiconductor device, which comprises the steps of: forming a hydrogen diffusion preventing insulating film covering capacitors; forming a capacitor protecting insulating film on the hydrogen diffusion preventing insulating film; and forming a first insulating film on the capacitor protecting insulating film by a plasma CVD method where, while a high-frequency bias electric power is applied toward the semiconductor substrate, a plasma-generating high frequency electric power is applied to first deposition gas containing oxygen and silicon compound gas. In the method, a condition by which moisture content in the capacitor protecting insulating film becomes less than that in the first insulating film is adopted as a film deposition condition for the capacitor protecting insulating film.

Abstract: A method of measuring a film thickness is disclosed. The method includes a step of forming a ferroelectric capacitor on a substrate, a step of forming an insulating film to cover the ferroelectric capacitor, and a step of optically measuring the thickness of the insulating film on an electrode of the ferroelectric capacitor.

Abstract: A method for manufacturing a semiconductor device by which deterioration in the characteristics of an oxide dielectric capacitor is suppressed and the gap between capacitors and the gap between electrodes can be filled while suppressing generation of voids. The method for manufacturing a semiconductor device comprises the steps of (a) preparing a substrate having semiconductor elements formed on a semiconductor substrate and having an oxide dielectric capacitor formed above the semiconductor substrate; (b) depositing a silicon oxide film by high density plasma (HDP) CVD under first conditions, the silicon oxide film covering the oxide dielectric capacitor; and (c) following the step (b), depositing a silicon oxide film by HDPCVD under second conditions wherein a high frequency bias is increased as compared with the first conditions.

Abstract: An interlayer insulating film made of insulating material is formed on a semiconductor substrate. A hydrogen diffusion barrier film is formed on the interlayer insulating film, the hydrogen diffusion barrier film being made of material having a higher hydrogen diffusion barrier function than a hydrogen diffusion barrier function of material of the interlayer insulating film. The semiconductor substrate formed with the interlayer insulating film and hydrogen diffusion barrier film is thermally treated. In the process of forming the interlayer insulating film, the interlayer insulating film is formed under the condition that a moisture content becomes 5×10?3 g/cm3 or lower. Even if annealing is performed after the hydrogen diffusion barrier film is formed, a crack is hard to be formed in the underlying interlayer insulating film.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a ferroelectric capacitor formed on a substrate and a wiring structure formed on the ferroelectric capacitor. The wiring structure includes a dielectric inter layer and a Cu wiring section formed in the dielectric inter layer. In addition, an etching stopper layer including a hydrogen diffusion preventing layer is formed so as to face the dielectric inter layer.

Abstract: After forming an interlayer insulating film (14) covering a ferroelectric capacitor, a hydrogen diffusion preventing film (18), an etching stopper (19) and an interlayer insulating film (20) are formed. Then, a wiring having a tantalum nitride (TaN) film (21) (barrier metal film) and a copper (Cu) film (22) is formed in the interlayer insulating film (20) by a single damascene method. Thereafter, a wiring having a copper film (29) and a wiring having a copper film (36) and the like are formed by a dual damascene method.

Abstract: A semiconductor device includes: a semiconductor substrate; a MOS transistor formed in the semiconductor substrate and having an insulated gate and source/drain regions on both sides of the insulated gate; a ferroelectric capacitor formed above the semiconductor substrate and having a lower electrode, a ferroelectric layer and an upper electrode; a metal film formed on the upper electrode and having a thickness of a half of or thinner than a thickness of the upper electrode; an interlayer insulating film burying the ferroelectric capacitor and the metal film; a conductive plug formed through the interlayer insulating film, reaching the metal film and including a conductive glue film and a tungsten body; and an aluminum wiring formed on the interlayer insulating film and connected to the conductive plug. A new problem near an upper electrode contact is solved which may otherwise be caused by adopting a W plug over the F capacitor.

Abstract: A highly reliable semiconductor device having a ferroelectric capacitor structure by sufficiently preventing the H2 attack without damaging the function of an interlayer insulating film covering interconnections and the like to obtain a high capacitor performance. The position of a semiconductor substrate mounted on and secured to a substrate support plate in an HDP-CVD system is adjusted in the vertical direction, whereby a second HDP-CVD oxide film is deposited so that voids are formed between aluminum interconnections at lower positions than the height of the aluminum interconnections.

Abstract: An insulation film (24) having a gradual inclination of a surface is formed by a high density plasma CVD method, an atmospheric pressure CVD method or the like, after a ferroelectric capacitor (23) is formed. Thereafter, an alumina film (25) is formed on the insulation film (24). According to the method, low coverage of the alumina film (25) does not become a problem, and the ferroelectric capacitor (23) is reliably protected.

Abstract: A method of manufacturing a semiconductor device has the steps of: forming a wiring pattern by dry etching a wiring layer on a semiconductor substrate, using a resist pattern as a mask; immersing the wiring pattern in amine containing liquid to remove deposition residues formed during the dry etching; then, processing the wiring pattern with fluid not containing amine and being capable of removing deposition residues; forming a conformal insulating layer on the processed wiring pattern; and forming an insulating layer having a planarizing function on the conformal insulating layer by CVD. This method is suitable for multi-layer wiring, and can form an interlayer insulating film having a satisfactory planarizing function.