Abstract: CCCV charging is applied to a lithium ion secondary battery. During CC charging, a transition point Ta appears in temperature rise gradient when battery temperature rises along with the charging, and with the transition point Ta being a border, a temperature rise gradient in an initial T1 period is steeper than a temperature rise gradient in a T2 period following the T1 period. Based on charging time tT corresponding to timing at which the transition point Ta appears after start of the CC charging from a condition of the SOC of 0%, changeover time ts is set in a range of tT?ts?(tT×1.2). The CC charging is performed at a first current value until changeover time tS elapses after its start, and after the changeover time ts elapses, the CC charging is performed with a second current value larger than the first current value.

Abstract: When a medium casing is properly inserted, a first pair of projections and a second pair of projections are passed through between a first bottom surface and a second bottom surface of a chassis in the moving direction and are thus prevented from coming into contact with the first and second bottom surfaces, thereby allowing for smooth insertion of the medium casing. In contrast, when the medium casing is inserted improperly from its wrong end, one of the projections on the lower surface of the medium casing comes into abutment with the second bottom surface of the chassis near the opening. Accordingly, an improperly inserted medium casing can be prevented from being inserted any further at an early stage of the insertion process.

Abstract: When a medium casing is properly inserted, a first pair of projections and a second pair of projections are passed through between a first bottom surface and a second bottom surface of a chassis in the moving direction and are thus prevented from coming into contact with the first and second bottom surfaces, thereby allowing for smooth insertion of the medium casing. In contrast, when the medium casing is inserted improperly from its wrong end, one of the projections on the lower surface of the medium casing comes into abutment with the second bottom surface of the chassis near the opening. Accordingly, an improperly inserted medium casing can be prevented from being inserted any further at an early stage of the insertion process.

Abstract: When a medium casing is moved deep into a device, a reference guide pin with a greater length provided in a driving-device body is first inserted into a first positioning hole of the medium casing and a subsidiary guide pin is subsequently inserted into a second positioning hole. This implies that the medium casing is guided deep into the device on the basis of the reference guide pin having a greater diameter. Therefore, even when the medium casing is inserted in a displaced state in a direction orthogonal to the insertion direction, such displacement can be compensated for gradually with the movement of the medium casing. This ensures proper connection between a plurality of external terminals of the medium casing and a plurality of connector pins of the driving-device body.

Abstract: Disclosed herein is a silicon dioxide film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas pretreating step of energizing a process gas to produce water, the process gas including hydrogen, chlorine, and oxygen gas; and a film forming step of forming a silicon dioxide film by supplying the the process gas that has been energized to produce water into the heated reaction chamber to oxidize the silicon layer of the object to be processed.

Abstract: A carbon wire heating element sealing heater is provided. Therein, a carbon wire heating element using carbon fibers is sealed in a quartz glass member, wherein absorption water quantity of the carbon wire heating element is 2×10?3 g/cm3 or less.

Abstract: A carbon wire heating element sealing heater is provided. Therein, a carbon wire heating element using carbon fibers is sealed in a quartz glass member, wherein absorption water quantity of the carbon wire heating element is 2×10?3 g/cm3 or less.

Abstract: This invention is an oxynitride film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas heating step of heating a process gas to a temperature not lower than a reaction temperature at which an oxynitride film can be formed, the process gas consisting of dinitrogen oxide gas; and a film forming step of forming an oxynitride film on the object to be processed by supplying the heated process gas into the heated processing chamber. The temperature to which the reaction chamber is heated in the reaction chamber heating step is set at a temperature below a temperature at which the process gas undergoes a reaction.

Abstract: A carbon wire heating element sealing heater is provided. Therein, a carbon wire heating element using carbon fibers is sealed in a quartz glass member, wherein absorption water quantity of the carbon wire heating element is 2×10?3 g/cm3 or less.

Abstract: The present invention relates generally to a heat treatment system and method for heat-treating an object to be treated. Particularly, the invention relates to a heat treatment system wherein an object to be treated is carried in a reaction vessel, which has been pressure-reduced to a predetermined degree of vacuum and the interior of which is heated to a predetermined process temperature, and a process gas is supplied into the reaction vessel via a gas feed passage to process the object.

Abstract: This invention is an oxynitride film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas heating step of heating a process gas to a temperature not lower than a reaction temperature at which an oxynitride film can be formed, the process gas consisting of dinitrogen oxide gas; and a film forming step of forming an oxynitride film on the object to be processed by supplying the heated process gas into the heated processing chamber. The temperature to which the reaction chamber is heated in the reaction chamber heating step is set at a temperature below a temperature at which the process gas undergoes a reaction.

Abstract: This invention is an oxynitride film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas heating step of heating a process gas to a temperature not lower than a reaction temperature at which an oxynitride film can be formed, the process gas consisting of dinitrogen oxide gas; and a film forming step of forming an oxynitride film on the object to be processed by supplying the heated process gas into the heated processing chamber. The temperature to which the reaction chamber is heated in the reaction chamber heating step is set at a temperature below a temperature at which the process gas undergoes a reaction.

Abstract: A carbon wire heating element sealing heater is provided. Therein, a carbon wire heating element using carbon fibers is sealed in a quartz glass member, wherein absorption water quantity of the carbon wire heating element is 2×10−3 g/cm3 or less.

Abstract: When an oxidation process for semiconductor wafers is carried out by a batch type furnace, the uniformity of the thickness of a film is intended to be improved so as to be capable of carrying out a low temperature process. In a system for feeding a mixed gas of hydrogen gas and water vapor into a reaction vessel to carry out a so-called wet oxidation, a ventilation resistance material is provided in an outside passage of a double-pipe passage for heating gas in an external combustion system, and a mixed gas of hydrogen gas and hydrogen chloride gas is passed through the ventilation resistance material to be heated to a process temperature or higher by means of the heater of the combustion system to previously produce a very small amount of water vapor to carry out a dry oxidation. When dinitrogen oxide gas is used for producing a nitrogen containing silicon oxide film, dinitrogen oxide gas is passed through the outside passage to be previously activated.

Abstract: The present invention relates generally to a heat treatment system and method for heat-treating an object to be treated. Particularly, the invention relates to a heat treatment system wherein an object to be treated is carried in a reaction vessel, which has been pressure-reduced to a predetermined degree of vacuum and the interior of which is heated to a predetermined process temperature, and a process gas is supplied into the reaction vessel via a gas feed passage to process the object.

Abstract: The fluid heating apparatus, in accordance with the present invention, developed to solve the technological problems described above is characterized by comprising at least a heating tube heating fluid to be supplied from fluid supply source, a heater section spirally formed on an outer periphery of the heating tube and a housing accommodating the heating tube and the heater section, wherein the heater section comprises a carbon wire heating element and a quartz glass tube in which the carbon wire heating element is enclosed.

Abstract: The fluid heating apparatus, in accordance with the present invention, developed to solve the technological problems described above is characterized by comprising at least a heating tube heating fluid to be supplied from fluid supply source, a heater section spirally formed on an outer periphery of the heating tube and a housing accommodating the heating tube and the heater section, wherein the heater section comprises a carbon wire heating element and a quartz glass tube in which the carbon wire heating element is enclosed.

Abstract: When an oxidation process for semiconductor wafers is carried out by a batch type furnace, the uniformity of the thickness of a film is intended to be improved so as to be capable of carrying out a low temperature process. In a system for feeding a mixed gas of hydrogen gas and water vapor into a reaction vessel to carry out a so-called wet oxidation, a ventilation resistance material is provided in an outside passage of a double-pipe passage for heating gas in an external combustion system, and a mixed gas of hydrogen gas and hydrogen chloride gas is passed through the ventilation resistance material to be heated to a process temperature or higher by means of the heater of the combustion system to previously produce a very small amount of water vapor to carry out a dry oxidation. When dinitrogen oxide gas is used for producing a nitrogen containing silicon oxide film, dinitrogen oxide gas is passed through the outside passage to be previously activated.

Abstract: This invention is an oxynitride film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas heating step of heating a process gas to a temperature not lower than a reaction temperature at which an oxynitride film can be formed, the process gas consisting of dinitrogen oxide gas; and a film forming step of forming an oxynitride film on the object to be processed by supplying the heated process gas into the heated processing chamber. The temperature to which the reaction chamber is heated in the reaction chamber heating step is set at a temperature below a temperature at which the process gas undergoes a reaction.

Abstract: A control system for a pulse-width modulation controlled power converter composed of self-turn-off devices. The control system includes a voltage command value generator for the power converter, a carrier wave generator and a circuit for correcting at least one of the voltage command value and the frequency of the carrier wave to generate as a corrected voltage command value and a corrected carrier wave. The control system further includes a gate pulse signal generator for receiving a first signal and a second signal and for comparing the first and second signals to generate gate pulse signals to the self-turn-off devices for controlling the power converter based on a comparison result. The voltage command value is taken as e (-1.ltoreq.e.ltoreq.+1), and a level setting value is taken as E.sub.a (0<E.sub.a <1). The gate pulse signal generator receives the voltage command value and the carrier wave as the first and second signals when -E.sub.a .ltoreq.e.ltoreq.+E.sub.a.