Abstract: An interconnection sheet is arranged which is separate to a rear stop. At least one second securement hole in at least one of left and right waterproof tapes is not covered by the interconnection sheet, and a rear stop is arranged to fill the at least one second securement hole.

Abstract: A wire saw apparatus including: a plurality of wire guides; a wire row formed of a wire which is wound around the plurality of wire guides and configured to reciprocatively travel in an axial direction; a nozzle configured to supply a coolant or slurry to the wire; a workpiece-holding portion configured to suspend and hold a workpiece plate having a workpiece bonded thereto with a beam interposed therebetween; a workpiece-feeding mechanism configured to press the workpiece against the wire row; and a mechanism configured to adjust a parallelism of axes of the plurality of wire guides around which the wire row is formed. Thereby, a wire saw apparatus and a method for manufacturing a wafer are provided which enable manufacturing of a wafer having any warp shape by controlling a warp in a wire travelling direction of a sliced workpiece.

Abstract: A wire saw apparatus including: a plurality of wire guides; a wire row formed of a wire which is wound around the plurality of wire guides and configured to reciprocatively travel in an axial direction; a nozzle configured to supply a coolant or slurry to the wire; a workpiece-holding portion configured to suspend and hold a workpiece plate having a workpiece bonded thereto with a beam interposed therebetween; a workpiece-feeding mechanism configured to press the workpiece against the wire row; and a mechanism configured to adjust a parallelism of axes of the plurality of wire guides around which the wire row is formed. Thereby, a wire saw apparatus and a method for manufacturing a wafer are provided which enable manufacturing of a wafer having any warp shape by controlling a warp in a wire travelling direction of a sliced workpiece.

Abstract: The present invention is a method for polishing a silicon wafer, in which an oxide film is formed on a back surface side of the wafer, wherein the oxide film on a chamfered portion of the silicon wafer is removed, and the oxide film on a peripheral portion of the back surface of the wafer is polished over at least 2 mm from the outermost peripheral portion of the back surface of the wafer so that a thickness of the polished oxide film decreases from inside to outside of the wafer, a method for producing such a silicon wafer, and a silicon wafer.

Abstract: The present invention is a method for polishing a silicon wafer, in which an oxide film is formed on a back surface side of the wafer, wherein the oxide film on a chamfered portion of the silicon wafer is removed, and the oxide film on a peripheral portion of the back surface of the wafer is polished over at least 2 mm from the outermost peripheral portion of the back surface of the wafer so that a thickness of the polished oxide film decreases from inside to outside of the wafer, a method for producing such a silicon wafer, and a silicon wafer.

Abstract: Provided are a novel edge polished wafer in which a wafer peripheral sag is suppressed, a polishing cloth, a polishing apparatus and a polishing method for processing the wafer. The wafer is provided by controlling an over-polish width in edge polishing to 400 ?m or less. Also, the polishing cloth has a multi-layer structure of at least two layers including a polishing fabric layer an Asker C hardness of which is 65 or higher and a sponge layer an Asker C hardness of which is 40 or lower, or a single layer structure of the polishing fabric layer. Further, the polishing apparatus and the polishing method are provided by edge polishing such that the wafer in rotation is put into contact with a rotary drum having the polishing cloth adhered thereon at a prescribed angle thereto while supplying polishing slurry to the contact portion of the polishing cloth.

Abstract: In a process for polishing the chamfered peripheral part of a wafer using a polishing cloth while supplying a polishing slurry in order to improve productivity of the process by reducing a polishing time, at least two steps of polishing processes are performed in sequence. The process comprises a first polishing process to polish a particular part, e.g. the part corresponding to the {110} plane of a peripheral part of the wafer and a second polishing process in which the whole part of a peripheral part of the wafer is polished for finishing by means of varying a hardness of the polishing clothes and/or a particle size of abrasives in the slurry such as the hardness of the polishing cloth in the second polishing process being softer than that of in the first polishing process and a particle size of abrasives in the slurry in the second polishing process being finer than that of in the first polishing process.

Abstract: Distribution of machining ability in periphery surface is grasped and evaluated through measuring the machined depth at several positions of the peripheral portion by use of a wafer for the evaluation of the ability of machining the peripheral portion thereof.

Abstract: Provided are a novel edge polished wafer in which a wafer peripheral sag is suppressed, a polishing cloth, a polishing apparatus and a polishing method for processing the wafer. The wafer is provided by controlling an over-polish width in edge polishing to 400 &mgr;m or less. Also, the polishing cloth has a multi-layer structure of at least two layers including a polishing fabric layer an Asker C hardness of which is 65 or higher and a sponge layer an Asker C hardness of which is 40 or lower, or a single layer structure of the polishing fabric layer. Further, the polishing apparatus and the polishing method are provided by edge polishing such that the wafer in rotation is put into contact with a rotary drum having the polishing cloth adhered thereon at a prescribed angle thereto while supplying polishing slurry to the contact portion of the polishing cloth.

Abstract: In a process for polishing the chamfered peripheral part of a wafer using a polishing cloth while supplying a polishing slurry in order to improve productivity of the process by reducing a polishing time, at least two steps of polishing processes are performed in sequence. The process comprises a first polishing process to polish a particular part, e.g. the part corresponding to the {110} plane of a peripheral part of the wafer and a second polishing process in which the whole part of a peripheral part of the wafer is polished for finishing by means of varying a hardness of the polishing clothes and/or a particle size of abrasives in the slurry such as the hardness of the polishing cloth in the second polishing process being softer than that of in the first polishing process and a particle size of abrasives in the slurry in the second polishing process being finer than that of in the first polishing process.

Abstract: Distribution of machining ability in periphery surface is grasped and evaluated through measuring the machined depth at several positions of the peripheral portion by use of a wafer for the evaluation of the ability of machining the peripheral portion thereof.