Patents by Inventor Kazutoshi Tsujimura

Kazutoshi Tsujimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having cap-metal layer
    Patent number: 5895265
    Abstract: A semiconductor device includes an insulating layer and an interconnection layer having a conductive layer provided over the insulating layer. The interconnection layer is patterned by photolithography. The device further includes a cap-metal layer, which is deposited on the conductive layer and suppresses reflection of light beams at the time of patterning the interconnection layer. The cap-metal layer has any one of the following structures: a double-layered structure having a titanium nitride layer and a titanium layer located between the titanium nitride layer and the conductive layer; a double-layered structure having a titanium nitride layer and an aluminum-titanium alloy layer located between the titanium nitride layer and the conductive layer; and a single-layered structure consisting essentially of an aluminum-titanium alloy. These design ensure accurate interconnection patterning in the photolithography, and provide improved EM and SM immunities of the interconnection.
    Type: Grant
    Filed: March 20, 1997
    Date of Patent: April 20, 1999
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Yasunori Inoue, Kazutoshi Tsujimura, Shinichi Tanimoto, Yasuhiko Yamashita, Kiyoshi Yoneda, Yoshikazu Ibara
  • Semiconductor device having cap-metal layer
    Patent number: 5635763
    Abstract: A semiconductor device is disclosed, which includes an insulating layer and an interconnection layer having a conductive layer provided over the insulating layer. The interconnection layer is patterned by photolithography. The device further includes a cap-metal layer, which is deposited on the conductive layer and suppresses reflection of light beams at the time of patterning the interconnection layer. The cap-metal layer has any one of the following structures: a double-layered structure having a titanium nitride layer and a titanium layer located between the titanium nitride layer and the conductive layer; a double-layered structure having a titanium nitride layer and an aluminum-titanium alloy layer located between the titanium nitride layer and the conductive layer; and a single-layered structure consisting essentially of an aluminum-titanium alloy. These design ensure accurate interconnection patterning in the photolithography, and provide improved EM and SM immunities of the interconnection.
    Type: Grant
    Filed: March 21, 1994
    Date of Patent: June 3, 1997
    Assignee: Sanyo Electric Co., Ltd.
    Inventors: Yasunori Inoue, Kazutoshi Tsujimura, Shinichi Tanimoto, Yasuhiko Yamashita, Kiyoshi Yoneda, Yoshikazu Ibara