Abstract: A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.

Abstract: A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.

Abstract: A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.

Abstract: Disclosed herein is a method and an apparatus for applying a coating liquid to an object from a liquid-applying member at a first prescribed position, thereby forming a film on the object. Before the coating liquid at the first position, the coating liquid is applied at a second predetermined position. An impurity-detecting device detects the impurities contained in the coating liquid applied at the second position. A particle-counting device is provided, and a switching device is provided on a liquid-supplying pipe extending from a source of the coating liquid to the liquid-applying member. The switching device switches the supply of the coating liquid between the liquid-applying member and the impurity-detecting device. The impurities in the coating liquid can thereby monitored.

Abstract: A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.

Abstract: The baking apparatus of the present invention comprises a casing surrounding a substrate W having a pattern-exposed resist film, a hot plate for heating the substrate in the casing, gas supply mechanisms for supplying a H2O component containing humidity gas into the casing. The H2O component included in the humidity gas is allowed to react with the resist film by introducing the humidity gas into the casing while the substrate is being heated by the hot plate, thereby rendering either an irradiate portion or a non-irradiate portion of the resist film, soluble in alkali.

Abstract: A solvent of a resist solution is dropped from a solvent supply nozzle onto the surface of a semiconductor wafer held by a spin chuck. The semiconductor wafer is rotated by the spin chuck to spread the resist solution over the entire surface of the semiconductor wafer W. Simultaneously, the resist solution is dropped from a resist solution supply nozzle onto the semiconductor wafer and spread following the solvent. During the processing, the processing space is isolated from the outer atmosphere by closing a lid of a processing vessel and a sprayed solvent is supplied into the processing space. The processing space is thus filled with the mist of solvent. In the processing space supplied with the solvent, evaporation of the solvent from the resist solution is suppressed. A film of the resist solution is formed with a uniform film thickness to the edge of the semiconductor wafer W.

Abstract: A resist-processing apparatus comprising a plurality of first processing units, a second processing unit, a first transport unit, a second transport unit, and an interface section. The first processing units are designed to process a wafer, and the second processing unit to process the wafer. The first transport unit has a first arm mechanism for loading and unloading the wafer into and from each of the first processing units. The second transport unit opposes the first transport unit, with the first processing units located between the first transport unit and the second transport unit. The second transport unit has a second arm mechanism for loading and unloading the wafer into and from at least one of the first processing units and into and from the second processing unit. The interface section is to be provided adjacent to an exposure apparatus. The first arm mechanism transfers the wafer between the first transport unit and the exposure apparatus.

Abstract: Disclosed is a resist coating-developing method and apparatus including (a) a setting step for setting a target value and an allowable range thereof, (b) a resist-coating step, (c) a pre-baking step, (d) a first cooling step, (e) a light-exposure step, (f) a line width measuring step for measuring a line width of a latent image, (g) a post-baking step, (h) a second cooling step, (i) a developing step, (j) a judging step determining whether or not the value of the line width of the latent image measured in the step (f) falls within the allowable range of the target value set in the step (a), (k) a calculating step for calculating a difference between the measured value of the latent image line width and the target value, and (l) a correcting step for correcting the process condition in at least one previous step.

Abstract: The baking apparatus of the present invention comprises a casing surrounding a substrate W having a pattern-exposed resist film, a hot plate for heating the substrate in the casing, gas supply mechanisms for supplying a H.sub.2 O component containing humidity gas into the casing. The H.sub.2 O component included in the humidity gas is allowed to react with the resist film by introducing the humidity gas into the casing while the substrate is being heated by the hot plate, thereby rendering either an irradiate portion or a non-irradiate portion of the resist film, soluble in alkali.

Abstract: Disclosed is a resist coating-developing method, including (a) a setting step for setting a target value and an allowable range thereof, (b) a resist-coating step, (c) a pre-baking step, (d) a first cooling step, (e) a light-exposure step, (f) a line width measuring step for measuring a line width of a latent image, (g) a post-baking step, (h) a second cooling step, (i) a developing step, (j) a judging step determining whether or not the value of the line width of the latent image measured in step (f) falls within the allowable range of the target value set in step (a), (k) a calculating step determining a difference between the measured value of the latent image line width and the target value, and (l) a correcting step for correcting the process condition in at least one previous step.

Abstract: Disclosed herein is a method and an apparatus for applying a coating liquid to an object from a liquid-applying member at a first prescribed position, thereby forming a film on the object. Before the coating liquid at the first position, the coating liquid is applied at a second predetermined position. An impurity-detecting device detects the impurities contained in the coating liquid applied at the second position. A particle-counting device is provided, and a switching device is provided on a liquid-supplying pipe extending from a source of the coating liquid to the liquid-applying member. The switching device switches the supply of the coating liquid between the liquid-applying member and the impurity-detecting device. The impurities in the coating liquid can thereby monitored.

Abstract: An apparatus for coating and developing a resist on a wafer comprises a carrier station provided with a plurality of carriers for receiving wafers and transfer tables, a processing section having a plurality of processing units, and a transfer robot provided between the carrier station and the processing section. The robot comprises a plate-shaped arm for transferring wafers between the carriers and the transfer tables, and two horseshoe-shaped forks for transferring wafers between the processing units and transfer tables. The robot is movable along a transfer path so as to make the arm and forks face the carriers, processing units and transfer tables.

Abstract: An apparatus for coating and developing a resist on a wafer comprises a carrier station provided with a plurality of carriers for receiving wafers and transfer tables, a processing section having a plurality of processing units, and a transfer robot provided between the carrier station and the processing section. The robot comprises a plate-shaped arm for transferring wafers between the carriers and the transfer tables, and two horseshoe-shaped forks for transferring wafers between the processing units and transfer tables. The robot is movable along a transfer path so as to make the arm and forks face the carriers, processing units and transfer tables.

Abstract: A device for transporting and transferring objects of treatment arranged in a down flow to a plurality of treatment sections for treating the objects comprises a transportation section movable between the treatment sections, a first drive mechanism for moving the transportation section, a first arm movably attached to the transportation section and used for those objects of treatment which are adjusted to a predetermined temperature in the treatment sections, a second arm movably attached to the transportation section and used for the other objects of treatment than the ones adjusted in temperature, and a second drive mechanism for separately moving the first and second arms.

Abstract: A method and an apparatus, both for ashing unnecessary layers such as a photoresist layer, formed on a semiconductor wafer, by applying ozone to the layer, are disclosed. An ashing gas containing oxygen atom radical, or containing oxygen gas and an ashing-promoting gas, is applied to the layer, thereby ashing the layer readily and efficiently. The surface temperature of the layer is set at a prescribed value, and the ashing gas is applied uniformly onto the entire surface of the layer, or onto a part thereof, thus ashing the whole layer, or a part thereof, uniformly at a high rate, and the end-point of the ashing process is detected, thereby to enhance the efficiency of the ashing process.