Abstract: There is disclosed a semiconductor device capable of improving reliability, a rotating electrical machine using the semiconductor device or a vehicle using the semiconductor device. The semiconductor device includes Schottky barrier junctions and pn junctions. The pn junctions are provided in rectification areas and guard ring parts. Breakdown voltage at pn junctions in the rectification area is lower than breakdown voltage at the Schottky barrier junctions and the pn junctions in the guard ring parts.

Abstract: A vehicle alternator output rectifier instrument in which mesa structure Zener diodes, formed by diffusion of impurity on a P-type silicon substrate, are used as rectifier elements which are used in rectifier circuits for rectifying an alternate current output of a vehicle alternator. Since the vehicle alternator output rectifier instrument employs the above Zener diodes, this rectifier instrument can endure high temperature circumstances, considerably reduce a reverse leakage current to thereby prevent a battery voltage from being discharged and reduce a radio noise to thereby reduce a bad influence exerted upon an electronic device serving as a load.

Abstract: A main controller installed in a distribution substation of an electric power system sends a request signal to each of section controllers installed in individual section switches upon detecting a distribution line fault. Each of the section controllers performs fault detection individually. Each section controller judges whether its associated section switch is dividing the distribution line between faulty and normal line sections on the basis of fault detect signals from the other section controllers. If it is judged that its associated section switch is dividing the distribution line between faulty and normal line sections, that section controller opens its associated section switch.

Abstract: A semiconductor rectifying device, suitable for installation in vehicles, comprises a cup-shaped metallic container, a semiconductor chip having a pn junction, one of whose main surfaces is bonded to the bottom surface of the container, a lead bonded to the other main surface of the semiconductor chip, and a silicone resin layer containing silica powder, with which layer an exposed portion of the semiconductor chip is covered.

Abstract: A plurality of current transformers connected in series provide secondary winding sides respectively connected to lamps. A constant-current source is provided to supply constant current to these lamps. Each lamp is connected to the corresponding terminal unit including a short-circuit switch for short-circuiting the secondary winding side of the transformer when the lamp is disconnected. A master station issues a request for detecting a disconnected lamp or checking whether or not failure occurs in the terminal unit to each terminal unit in the form of an instant power interruption. Each terminal unit has a proper identification time assigned thereto.

Abstract: A semiconductor device comprises a heat-radiating electrode plate, a semiconductor element soldered to the depressed portion formed in the heat-radiating electrode plate, a header lead soldered onto the semiconductor element, a terminal board of insulating material fixed on the heat-radiating electrode plate, and a lead terminal secured to the terminal board and with the one end thereof electrically and mechanically connected to the header lead. The semiconductor device further comprises means for mitigating the transmission to the solder of the stress generated along the length of the header lead by the difference in the coefficient of thermal expansion among the component parts, and means for alleviating the lateral stress generated in the solder by the difference in the coefficient of thermal expansion between the header lead and the semiconductor element.

Abstract: A semiconductor device has a composite metal heat-radiating plate consisting of, for example, two copper layers for serving as a thermally and electrically conducting medium and an iron layer for giving mechanical strength, interposed between the copper layers, in which the semiconductor element is directly or indirectly, electrically and mechanically coupled by soldering to one of the copper layers.