Abstract: An object of the invention is to provide a glass panel unit manufacturing method and a glass window manufacturing method which enable a binder to be effectively removed from a glass adhesive, provide high adhesive strength between panels, and enable a vacuum space to be stably formed. A method for manufacturing a glass panel unit includes: disposing a glass adhesive to have one part as a low step part thinner than the other part of the glass adhesive; disposing a first substrate including at least a first glass substrate and a second substrate including at least a second glass substrate to face each other; and heating glass composite to form an inner space; reducing the pressure of the inner space; and forming a vacuum space from the inner space. The glass adhesive includes glass powder and a binder.

Abstract: A glass panel unit manufacturing method includes disposing a glass adhesive on a first substrate, disposing a second substrate to face the first substrate, forming an inner space between the first substrate and the second substrate, reducing the pressure of the inner space, and forming a reduced-pressure space from the inner space. The glass adhesive includes glass powder having an average particle diameter larger than or equal to 25 ?m and smaller than or equal to 30 ?m.

Abstract: A Schottky barrier diode comprises a semiconductor layer configured to include a surface and a plurality of recesses that are recessed relative to the surface; and a Schottky electrode arranged to form a Schottky contact with the surface. When the semiconductor layer is viewed from a surface side thereof, the surface is arranged continuously, and distances on the surface between adjacent recesses are substantially identical. This configuration suppresses a photoresist from being left in any unintended portion.

Abstract: A semiconductor device includes a substrate, a semiconductor layer that is formed on the substrate and includes a pn junction or a hetero-junction, an insulating film that is formed on the semiconductor layer to be in contact with an end of the pn junction or an end of the hetero-junction, and an electrode formed on the semiconductor layer. The insulating film includes an insulating layer that is mainly made of negatively charged microcrystal.

Abstract: There is provided a semiconductor device configured to include a plurality of semiconductor units formed in a semiconductor layer. Each of the semiconductor units comprises a mesa portion; a Schottky electrode formed on the mesa portion; an insulating film formed continuously on another portion of the Schottky electrode that is nearer to an edge of an upper face of the mesa portion than one portion of the Schottky electrode, on a side face of the mesa portion, and on a surface of the semiconductor layer other than the mesa portion; and a wiring electrode formed on the Schottky electrode and the insulating film. An angle between the side face of the mesa portion and the surface of the semiconductor layer is 90 degrees. A part of the wiring electrode is placed between the insulating films formed on opposed side faces of adjacent mesa portions.

Abstract: There is provided a semiconductor device configured to include a plurality of semiconductor units formed in a semiconductor layer. Each of the semiconductor units comprises a mesa portion; a Schottky electrode formed on the mesa portion; an insulating film formed continuously on another portion of the Schottky electrode that is nearer to an edge of an upper face of the mesa portion than one portion of the Schottky electrode, on a side face of the mesa portion, and on a surface of the semiconductor layer other than the mesa portion; and a wiring electrode formed on the Schottky electrode and the insulating film. An angle between the side face of the mesa portion and the surface of the semiconductor layer is 90 degrees. A part of the wiring electrode is placed between the insulating films formed on opposed side faces of adjacent mesa portions.

Abstract: Provided is an electrodeionization apparatus for producing deionized water, capable of removing or reducing a biased flow of electric current in a deionization chamber. In the electrodeionization apparatus for producing deionized water, at least one deionization treatment unit including the deionization chamber and a pair of concentration chambers adjacent to both sides of the deionization chamber is disposed between a cathode and an anode. In the deionization chamber, anion exchanger layers and cation exchanger layers are stacked in an order in which a last ion exchanger layer through which water to be treated passes is an anion exchanger layer. A bipolar membrane is formed on the cathode side of the anion exchanger layer in the deionization chamber. The anion exchange membrane of the bipolar membrane is in contact with the anion exchanger layer.

Abstract: A first glass substrate and a second glass substrate which are placed to face each other with a seal member in-between are bonded to each other with the seal member. Subsequently, the first glass substrate, the seal member, and the second glass substrate are cut collectively along a cut plane passing through the seal member from one of the first glass substrate and the second glass substrate bonded to each other. Thereby, a glass panel unit is manufactured.

Abstract: An organic EL device includes: a first substrate and a second substrate; an organic light emitting portion including a first electrode, an organic layer and a second electrode; a sealing member surrounding the organic light emitting portion; a first electrode extraction portion; a second electrode extraction portion; an insulating layer that electrically insulates the first electrode and the second electrode; and a connecting portion that electrically connects the second electrode extraction portion and the second electrode. The insulating layer includes: a first insulating portion provided between the first electrode extraction portion and the organic layer; and a second insulating portion that is provided between the second electrode extraction portion and the organic layer and covered with the connecting portion. A distance between the sealing member and the first insulating portion is longer than a distance between the sealing member and the second insulating portion.

Abstract: A cooling fan is provided at an axial end portion of a rotor. The cooling fan generates a cooling air when rotated integrally with the rotor. On a stator core arranged at a position on a radially outer side of the rotor, a plurality of stator coils are arrayed in a circumferential direction of the stator core. Each stator coil includes a coil end that protrudes from an axial end surface of the stator core. A front housing covering the cooling fan includes: an exhaust port for passing the cooling air therethrough, at least part of the exhaust port being located at a position on a radially outer side of the coil end; and a recess portion opposed to the coil end in an axial direction.

Abstract: A vehicle rotating electrical machine has a rotor, a stator, a cooling fan provided in an axial direction end portion of the rotor and rotated integrally with the rotor, a housing, having an air intake provided opposing the cooling fan in an axial direction end portion, an annular rib provided adjacent to the air intake, and a discharge port provided across the annular rib, that houses the rotor and the stator and rotatably supports a rotary shaft, and a stay provided on a radial direction outer periphery of the housing, wherein the annular rib has an inner diameter side inclined cylindrical face, which inclines so that a diameter thereof becomes gradually smaller toward an inner side of the housing from an axial direction outer side end face of the air intake, and a sealing portion is provided between the stay and the annular rib.

Abstract: A technique of suppressing leak current in a semiconductor device is provided. A semiconductor device, comprises: a semiconductor layer made of a semiconductor; an insulating layer configured to have electric insulation property and formed to cover part of the semiconductor layer; a first electrode layer formed on the semiconductor layer, configured to have a work function of not less than 0.5 eV relative to electron affinity of the semiconductor layer and extended to surface of the insulating layer to form a field plate structure; and a second electrode layer configured to have electrical conductivity and formed to cover at least part of the first electrode layer. A distance between an edge of a part of the first electrode layer that is in contact with the semiconductor layer and the second electrode layer is equal to or greater than 0.2 ?m.

Abstract: A semiconductor device comprises: a semiconductor layer; and an insulating film that is formed on the semiconductor layer. The insulating film includes an insulating layer that is mainly made of negatively charged microcrystal.

Abstract: An organic EL device includes: a first substrate and a second substrate; an organic light emitting portion including a first electrode, an organic layer and a second electrode; a sealing member surrounding the organic light emitting portion; a first electrode extraction portion; a second electrode extraction portion; an insulating layer that electrically insulates the first electrode and the second electrode; and a connecting portion that electrically connects the second electrode extraction portion and the second electrode. The insulating layer includes: a first insulating portion provided between the first electrode extraction portion and the organic layer; and a second insulating portion that is provided between the second electrode extraction portion and the organic layer and covered with the connecting portion. A distance between the sealing member and the first insulating portion is longer than a distance between the sealing member and the second insulating portion.

Abstract: A semiconductor device comprises a semiconductor layer including a mesa structure and a peripheral surface extending around the mesa structure, the mesa structure having a plateau shape with an upper surface and a side surface; a Schottky electrode forming a Schottky junction with the upper surface; an insulating film extending from the peripheral surface, across the side surface, and onto the Schottky electrode, the insulating film having an opening formed on the Schottky electrode; and a wiring electrode electrically connected to the Schottky electrode inside the opening, the wiring electrode extending from inside of the opening, across a portion of the insulating film formed on the side surface, and onto another portion of the insulating film formed on the peripheral surface.

Abstract: A technique of improving the barrier height between an electrode layer and a semiconductor layer is provided. A semiconductor device comprises a semiconductor layer made of a semiconductor and an electrode layer formed to be at least partly in Schottky contact with the semiconductor layer. The electrode layer includes a first layer and a second layer arranged sequentially from a semiconductor layer-side. The first layer is a layer mainly made of nickel and has a film thickness of not less than 50 nm and not greater than 200 nm. The second layer is a layer mainly made of at least one metal selected from the group consisting of palladium, platinum and iridium. The second layer has a film thickness that is equal to or greater than the film thickness of the first layer.

Abstract: The present invention provides an AC generator for a vehicle, in which a resin case (26) includes convex portions (33) formed on an outer circumferential surface of the resin case (26) so as to extend in an axial direction of the resin case (26) to be brought into pressure-contact with an inner circumferential wall surface of a counter drive-side bearing housing portion (24), and convex portions (34) formed on an inner circumferential surface of the resin case (26) so as to be opposed to the convex portions (33). The concave portions (34) allow displacement of the convex portions (33) in a radially inward direction of the resin case (26). By an elastic force generated by the displacement of the convex portions (33), the resin case (26) is integrated with the counter drive-side bearing housing portion (24).

Abstract: The stator winding has winding assemblies that are disposed in a stator core so as to be stacked in three or more layers in a radial direction such that slot-housed portions line up in single columns in a clot depth direction inside slots, and radial widths of return portions of the winding assemblies that are mounted so as to be stacked in a radial direction are made sequentially narrower in order of return portions of a winding assembly that is positioned centrally, return portions of a winding assembly that is positioned on an inner circumferential side, and return portions of a winding assembly that is positioned on an outer circumferential side.

Abstract: A semiconductor device comprises a semiconductor layer including a mesa structure and a peripheral surface extending around the mesa structure, the mesa structure having a plateau shape with an upper surface and a side surface; a Schottky electrode forming a Schottky junction with the upper surface; an insulating film extending from the peripheral surface, across the side surface, and onto the Schottky electrode, the insulating film having an opening formed on the Schottky electrode; and a wiring electrode electrically connected to the Schottky electrode inside the opening, the wiring electrode extending from inside of the opening, across a portion of the insulating film formed on the side surface, and onto another portion of the insulating film formed on the peripheral surface.

Abstract: A vehicle AC generator capable of enhancing a cooling effect by increasing an air volume of cooling air is obtained. The AC generator includes: a casing having a ventilation port on an outer periphery; a stator installed in the casing; a rotor supported in the stator in a rotatable manner; a fan installed oppositely to the ventilation port in the casing and rotated integrally with the rotor; and a protrusion formed on a surface of the casing opposing a tip end of the fan at a position adjacent to an outer periphery of the ventilation port of the casing.