Abstract: An apparatus includes pixels on a substrate. Each pixel includes a first portion, a second, and a microlens. The substrate has a first surface on an incidence side and a second surface opposite to the first surface, and includes an inter-pixel portion isolating adjacent pixels from each other, and an intra-pixel portion isolating the first and second portions from each other. The inter-pixel portion includes a first region located adjacently to the first surface, and a second region located adjacently to the second surface. The intra-pixel portion includes a third region located adjacently to the first surface, and a fourth region located adjacently to the second surface. The first and third regions are shifted with respect to the second and fourth regions, respectively, in an identical direction that is a direction orthogonal to a longitudinal direction of the intra-pixel portion in plan view from the first surface.

Abstract: A photoelectric conversion device includes a pixel area, the pixel area including a plurality of pixels arranged in a matrix, each pixel comprising a photoelectric conversion portion, a floating diffusion, and a transfer gate, the transfer gate controlling transfer of charges generated in the photoelectric conversion portion to the floating diffusion. The photoelectric conversion portion is shifted relatively to the transfer gate depending on a position thereof in the pixel area. The shifting direction is a direction perpendicular to a charge transfer direction from the photoelectric conversion portion to the floating diffusion.

Abstract: A photoelectric conversion device in the present disclosure includes a first trench extending inside a semiconductor substrate from a first face of the semiconductor substrate between a first photoelectric conversion portion and a second photoelectric conversion portion arranged in a first pixel and a second trench extending from a second face of the semiconductor substrate between the first pixel and a second pixel, and the end on the second face side of the first isolation portion is located closer to the second face side than the end on the first face side of the second isolation portion.

Abstract: A photoelectric conversion device includes a pixel area, the pixel area including a plurality of pixels arranged in a matrix, each pixel comprising a photoelectric conversion portion, a floating diffusion, and a transfer gate, the transfer gate controlling transfer of charges generated in the photoelectric conversion portion to the floating diffusion. The photoelectric conversion portion is shifted relatively to the transfer gate depending on a position thereof in the pixel area. The shifting direction is a direction perpendicular to a charge transfer direction from the photoelectric conversion portion to the floating diffusion.

Abstract: A pixel electrode includes a first electrode, a second electrode arranged so as to face the first electrode in a first direction, and a third electrode. A counter electrode is provided in an upper portion of the pixel electrode, and a photoelectric conversion layer is arranged so as to be sandwiched by the pixel electrode and the counter electrode. A length of the third electrode in a predetermined direction is shorter than a length of the first electrode and a length of the second electrode.

Abstract: A color filter layer and a light transmissive layer have a groove between a first color filter and a second color filter and between a first light transmissive portion and a second light transmissive portion. The groove contains a member located at least between the first color filter and the second color filter. The member has a refractive index higher than 1.0.

Abstract: An image sensing device includes a first pixel including a first light-shielding member and a second pixel including a second light-shielding member, and the first and second pixels perform phase difference detection. The image sensing device further includes a third pixel including a third light-shielding member, and the third pixel performs image sensing. A third opening in the third light-shielding member is disposed in a center of the third pixel. In a predetermined direction, a length of the third opening is smaller than a length of a first opening in the first light-shielding member and a length of a second opening in the second light-shielding member.

Abstract: A first photoelectric conversion unit is arranged in one end portion of a pixel, and a second photoelectric conversion unit is arranged in the other end portion of the pixel. A third photoelectric conversion unit is arranged in a center portion of the pixel. A length of the third photoelectric conversion unit in a predetermined direction is shorter than a length of the first photoelectric conversion unit and the second photoelectric conversion unit.

Abstract: A color filter layer and a light transmissive layer have a groove between a first color filter and a second color filter and between a first light transmissive portion and a second light transmissive portion. The groove contains a member located at least between the first color filter and the second color filter. The member has a refractive index higher than 1.0.

Abstract: A pixel electrode includes a first electrode, a second electrode arranged so as to face the first electrode in a first direction, and a third electrode. A counter electrode is provided in an upper portion of the pixel electrode, and a photoelectric conversion layer is arranged so as to be sandwiched by the pixel electrode and the counter electrode. A length of the third electrode in a predetermined direction is shorter than a length of the first electrode and a length of the second electrode.

Abstract: A first photoelectric conversion unit is arranged in one end portion of a pixel, and a second photoelectric conversion unit is arranged in the other end portion of the pixel. A third photoelectric conversion unit is arranged in a center portion of the pixel. A length of the third photoelectric conversion unit in a predetermined direction is shorter than a length of the first photoelectric conversion unit and the second photoelectric conversion unit.

Abstract: A solid-state imaging apparatus having a sensitivity difference between microlens regions hardly be recognized comprises: a plurality of pixels each of which has a photoelectric conversion portion, an optical element arranged above the photoelectric conversion portion, and a microlens arranged above the optical element, wherein the microlenses of the plurality of pixels include a plurality of microlenses of a first microlens structure arranged in a first microlens region, and a plurality of microlenses of a second microlens structure arranged in a second microlens region, the optical elements of the plurality of pixels include a plurality of optical elements of a first optical element structure arranged in a first optical element region, and a plurality of optical elements of a second optical element structure arranged in a second optical element region, and the first microlens region is arranged above a boundary between the first and second optical element regions.

Abstract: An optical element array includes a first optical element and a second optical element that is further away from a center of an array region than the first optical element. Orthogonal projections of the first and second optical elements include first and second ends and third and fourth ends, respectively, and vertices thereof are at first and second positions. An interval between the third end and the second position is smaller than that between the first end and the first position and that between the fourth end and that second position. The first and second optical elements respectively include first and second outer edges extending from the vertices thereof to the second and fourth ends. A radius of curvature, or a median value of the radius of curvature, of the second outer edge is in the range of 80% to 120% of that of the first outer edge.

Abstract: An optical element array includes a first optical element and a second optical element that is further away from a center of an array region than the first optical element. Orthogonal projections of the first and second optical elements include first and second ends and third and fourth ends, respectively, and vertices thereof are at first and second positions. An interval between the third end and the second position is smaller than that between the first end and the first position and that between the fourth end and that second position. The first and second optical elements respectively include first and second outer edges extending from the vertices thereof to the second and fourth ends. A radius of curvature, or a median value of the radius of curvature, of the second outer edge is in the range of 80% to 120% of that of the first outer edge.

Abstract: Provided is a method of manufacturing a semiconductor element having at a cut portion with excellent quality, which minimizes a region on a silicon substrate necessary for cutting, and which prevents cutting water used when cutting by dicing is carried out from entering the semiconductor element. The method of manufacturing a semiconductor element includes: arranging, on the silicon substrate, multiple semiconductor element portions so as to be adjacent to one another; bonding the silicon substrate and a glass substrate together using the resin; and cutting the silicon substrate and the glass substrate, respectively, in a region in which the resin is provided, the cutting the silicon substrate and the glass substrate including: half-cutting the silicon substrate by dicing; cutting the glass substrate by scribing; and dividing the silicon substrate, the glass substrate, and the resin.

Abstract: Provided is a manufacturing method for an organic electroluminescence display apparatus in which processing uniformity is kept during partial removal processing of an electrode layer or an organic compound layer. The organic electroluminescence display apparatus includes: a substrate; and a light-emitting device including an organic compound layer including an emission layer sandwiched between electrodes formed on the substrate, in which: two or more of the light-emitting devices are provided, and the light-emitting devices are stacked in a direction perpendicular to the substrate; at least one of the electrodes and the organic compound layers in the two or more light-emitting devices includes openings; and the openings are positioned so as not to overlap with one another in the direction perpendicular to the substrate.

Abstract: Provided is a manufacturing method for an organic electroluminescence display apparatus in which processing uniformity is kept during partial removal processing of an electrode layer or an organic compound layer. The organic electroluminescence display apparatus includes: a substrate; and a light-emitting device including an organic compound layer including an emission layer sandwiched between electrodes formed on the substrate, in which: two or more of the light-emitting devices are provided, and the light-emitting devices are stacked in a direction perpendicular to the substrate; at least one of the electrodes and the organic compound layers in the two or more light-emitting devices includes openings; and the openings are positioned so as not to overlap with one another in the direction perpendicular to the substrate.