Abstract: A semiconductor storage device includes a first memory area configured in a volatile semiconductor memory, second and third memory areas configured in a nonvolatile semiconductor memory, and a controller which executes following processing. The controller executes a first processing for storing a plurality of data by the first unit in the first memory area, a second processing for storing data outputted from the first memory area by a first management unit in the second memory area, and a third processing for storing data outputted from the first memory area by a second management unit in the third memory area.

Abstract: A memory system includes a nonvolatile memory including a plurality of blocks as data erase units, a measuring unit which measures an erase time at which data of each block is erased, and a block controller which writes data supplied from at least an exterior into a first block which is set in a free state and whose erase time is oldest.

Abstract: Surface image data relating to an upper cover rubber is continuously and successively captured by a surface camera device and input to a computation device. Each piece of surface image data is stored in a database in association with data on the circumferential position of that surface image data on a conveyor belt and data on the time at which that surface image data was captured. An input unit is used to display any piece of surface image data on a monitor, register surface image data in which a predetermined defect is present on the surface of the upper cover rubber in the database as data to be monitored, and automatically register in the database surface image data having the same circumferential position data as the data to be monitored as related data to be monitored. Such monitoring system determines the state of damage of a cover rubber surface.

Abstract: Surface image data relating to an upper cover rubber is continuously and successively captured by a surface camera device and input to a computation device. Each piece of surface image data is stored in a database in association with data on the circumferential position of that surface image data on a conveyor belt and data on the time at which that surface image data was captured. An input unit is used to display any piece of surface image data on a monitor, register surface image data in which a predetermined defect is present on the surface of the upper cover rubber in the database as data to be monitored, and automatically register in the database surface image data having the same circumferential position data as the data to be monitored as related data to be monitored. Such monitoring system determines the state of damage of a cover rubber surface.

Abstract: The present invention provides a lithium tantalate (LT) single crystal or a lithium niobate (LN) single crystal, which has strong resistance to stress shock or thermal shock, and a surface acoustic wave filter comprising a piezoelectric substrate produced from the single crystal. The lithium tantalate single crystal or lithium niobate single crystal of the invention contains at least one additional element selected from the group consisting of iron, copper, manganese, molybdenum, cobalt, nickel, zinc, carbon, magnesium, titanium, tungsten, indium, tin, rhenium, scandium, rhodium, ruthenium, palladium, silver, platinum, gold, yttrium, neodymium, iridium, germanium, barium, cesium, strontium, gallium, cerium and other transition elements at a ratio of from 0.002 wt % or more to 0.1 wt % or less, and has excellent stress shock characteristics and thermal shock characteristics.

Abstract: To provide a wafer, made from a lithium tantalate single crystal or a lithium niobate single crystal, wafer which is charge restrained without impairing the piezoelectricity. Moreover, to provide a processing method and a processing apparatus therefor. It is characterized in that a wafer 50, made from a lithium tantalate single crystal or a lithium niobate single crystal, and a reducing agent 60, including an alkali metal or an alkali metal compound, are accommodated in a processing tank 2, and the inside of the processing tank 2 is held at a temperature of from 200° C. or more to less than a Curie temperature of the single crystal under decompression, thereby reducing the wafer 50.