Abstract: A piezoelectric element includes a first electrode, a second electrode, a piezoelectric layer which is provided between the first electrode and the second electrode, and is formed of a perovskite type oxide including at least one selected from the group consisting of potassium, sodium, bismuth, and niobium, a first perovskite layer which is provided between the piezoelectric layer and the first electrode, and is formed of a perovskite type oxide having a composition different from that of the piezoelectric layer, and a second perovskite layer which is provided between the piezoelectric layer and the second electrode, and is formed of a perovskite type oxide having a composition different from that of the piezoelectric layer.

Abstract: A piezoelectric element includes a substrate, a first electrode formed on the substrate, a piezoelectric layer, which is a layered structure of a plurality of piezoelectric films each containing potassium, sodium, and niobium, formed on the first electrode, and a second electrode formed on the piezoelectric layer. A sodium concentration in the piezoelectric layer has a Na local maximum value, which is a local maximum value of the sodium concentration, in a first piezoelectric film, which is among the plurality of piezoelectric films, in the vicinity of the first electrode, a sodium concentration gradient decreasing from the Na local maximum value toward the second electrode, and a Na local minimum value, which is a local minimum value of the sodium concentration, near a boundary between the first piezoelectric film and a second piezoelectric film formed immediately above the first piezoelectric film.

Abstract: A piezoelectric element includes a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is provided between the first electrode and the second electrode, and is formed of a perovskite type oxide which contains potassium, sodium, niobium, and manganese. In the piezoelectric layer, a proportion of an A-site constituent element of the perovskite type oxide is smaller than a proportion of a B-site constituent element thereof. In XRD measurement of the piezoelectric layer, two or more peaks derived from the perovskite type oxide are provided in a range of 44°<2?<48°, and an intensity ratio (X/Y) between a peak X having the highest intensity among the peaks, and a peak Y having the lowest intensity satisfies the following expression. 2.

Abstract: A display apparatus according to the present invention includes a display unit configured to display an image based on a display image, a gradation conversion unit configured to generate the display image by converting gradation values of an input image using reference correction information in a case where a frame rate of the input image is a first frame rate and generate the display image by converting the gradation values of the input image using the reference correction information and correction coefficient information in a case where the frame rate of the input image is a second frame rate which is different from the first frame rate, and a display controller configured to control the display unit so that the image based on the display image is displayed in a driving frequency corresponding to the frame rate of the input image.

Abstract: A piezoelectric element includes a first electrode, a second electrode, and a thin piezoelectric layer. The thin piezoelectric layer is provided between the first electrode and the first electrode, and is formed of a perovskite type compound oxide which contains potassium, sodium, and niobium. In the piezoelectric layer, in an X-ray diffraction pattern obtained by ??2? measurement, peaks derived from a (002) plane and a (200) plane are provided in a range in which 2? is from 45° to 47°, a peak position of the peak on a high angle side among the peaks satisfies 46.0°?2??46.5°, and a difference of 2? between the peak on the high angle side and the peak on a low angle side is greater than 0.60°.

Abstract: A piezoelectric element includes a first electrode formed on a substrate, a piezoelectric layer formed on the first electrode and composed of a complex oxide having a perovskite structure containing potassium (K), sodium (Na), niobium (Nb), and manganese (Mn), and a second electrode formed on the piezoelectric layer. The manganese includes divalent manganese (Mn2+), trivalent manganese (Mn3+), and tetravalent manganese (Mn4+), a molar ratio of the divalent manganese to a sum of the trivalent manganese and the tetravalent manganese ((Mn2+/(Mn3++Mn4+)) is 1 or more and 10 or less, and a molar ratio of the potassium to the sodium (K/Na) is 1.1 or less.

Abstract: A piezoelectric element includes a first electrode, a piezoelectric layer formed on the first electrode by a solution method and formed of a perovskite-type composite oxide including potassium, sodium, and niobium, and a second electrode provided on the piezoelectric layer, in which the composite oxide further includes lithium and manganese, the content of lithium is 3 mol % to 5 mol % in the total number of moles of metal in the A site, the content of manganese is 5 mol % or less in the total number of moles of metal in the B site, and a lithium measured intensity (CPS) maximum value in the film thickness direction of the piezoelectric layer in SIMS measurement is less than 2.65 times a minimum value.

Abstract: A piezoelectric element includes a first and a second electrode, a piezoelectric layer between the first electrode and the second electrode, and an orientation control layer between the first electrode and the piezoelectric layer. The orientation control layer contains perovskite complex oxide containing potassium, sodium, calcium, and niobium and preferentially oriented in the (100) plane.

Abstract: There is provided a piezoelectric element which includes a first electrode which is formed on a substrate, a piezoelectric layer which is formed on the first electrode, and is formed from a compound oxide having an ABO3 type perovskite structure in which potassium (K), sodium (Na), niobium (Nb), and manganese (Mn) are provided, and a second electrode which is formed on the piezoelectric layer. The manganese includes bivalent manganese (Mn2+), trivalent manganese (Mn3+), and tetravalent manganese (Mn4+). A molar ratio (Mn2+/Mn3++Mn4+) of the bivalent manganese to a sum of the trivalent manganese and the tetravalent manganese is equal to or greater than 0.31.

Abstract: A piezoelectric material contains: a first component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; a second component which is a crystal other than the rhombohedral crystal in a single composition, has a Curie temperature Tc2<Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; and a third component which is a crystal other than the rhombohedral crystal in a single composition similar to the second component, has a Curie temperature Tc3?Tc1, and is a lead-free-system composite oxide that has a perovskite-type structure and is different from the second component. When a molar ratio of the third component to the sum of the second component and the third component is ? and ?×Tc3+(1??)×Tc2 is Tc4, |Tc4?Tc2|?50° C.

Abstract: A piezoelectric material contains: a first component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; a second component which is a crystal other than a rhombohedral crystal in a single composition, has a Curie temperature Tc2 higher than Tc1, and is a lead-free-system composite oxide having a perovskite-type structure; and a third component which is a rhombohedral crystal in a single composition, has a Curie temperature Tc3 equal to or higher than Tc2, and is a lead-free-system composite oxide that has a perovskite-type structure and is different from the first component. When a molar ratio of the third component to the sum of the first component and the third component is ? and ?×Tc3+(1??)×Tc1 is Tc4, |Tc4?Tc2| is 50° C. or lower.

Abstract: A piezoelectric element includes a first electrode, a piezoelectric layer formed of a first piezoelectric film which is formed on the first electrode and which includes potassium, sodium, and niobium and a plurality of second piezoelectric films which are formed on the first piezoelectric film and which include potassium, sodium, and niobium, and a second electrode formed on the piezoelectric layer, in which the piezoelectric layer is a stack of a plurality of piezoelectric films, the first piezoelectric film has a thickness of 30 nm to 70 nm, a concentration of sodium in each of the piezoelectric films is along a gradient in the film thickness direction with the first electrode side being high and the second electrode side being low.

Abstract: There is provided a piezoelectric element which includes a first electrode, a piezoelectric layer which is formed on the first electrode by using a solution method, and is formed from a compound oxide having a perovskite structure in which potassium, sodium, and niobium are provided, and a second electrode which is provided on the piezoelectric layer. A cross-sectional SEM image of the piezoelectric layer is captured at a magnification of 100,000. When evaluation is performed under a condition in which a measured value in a transverse direction is set to 1,273 nm, two or more voids are included in the piezoelectric layer, a difference between the maximum value and the minimum value among diameters of the voids to be largest in a film thickness direction is equal to or smaller than 14 nm, and the maximum value is equal to or smaller than 24 nm.

Abstract: A piezoelectric element includes a first electrode, a piezoelectric layer which is formed on the first electrode by using a solution method, and is formed from compound oxide which has a perovskite structure in which potassium, sodium, and niobium are provided, and a second electrode which is provided on the piezoelectric layer. The piezoelectric layer has a peak derived from a (200) plane and a peak derived from a (002) plane in an X-ray diffraction pattern obtained by ??2? measurement.

Abstract: An image display apparatus according to the present invention, includes: a first acquisition unit configured to acquire captured image data from an image capturing apparatus; a second acquisition unit configured to acquire operation information representing a user operation performed on the image capturing apparatus, from the image capturing apparatus; an image processing unit configured to generate processed image data by carrying out image processing corresponding to the operation information acquired by the second acquisition unit on the captured image data acquired by the first acquisition unit; and a display unit configured to display a processed image based on the processed image data on a screen.

Abstract: A piezoelectric element includes a first electrode formed on a substrate, a piezoelectric layer which is formed on the first electrode and includes a complex oxide with an ABO3-type perovskite structure represented by the following formula (1); and a second electrode formed on the piezoelectric layer, in which a seed layer including a complex oxide with an ABO3 perovskite structure in which K and Nb are included between the first electrode and the piezoelectric layer, and the piezoelectric layer is formed from a polycrystal that is preferentially orientated on the (110) plane.

Abstract: A piezoelectric element includes a first electrode that is formed on a substrate, a piezoelectric layer that is formed on the first electrode and includes an ABO3 type complex oxide of the perovskite structure expressed by Formula (1) described below, and a second electrode that is formed on the piezoelectric layer, in which the piezoelectric layer is made of a polycrystal which is preferentially oriented to a (100) plane, and has a thickness of 50 nm or more and 2000 nm or less, and in the piezoelectric layer, a diffraction peak position (2?) of an X-ray derived from the (100) plane of the piezoelectric layer is 22.51° or more and 22.95° or less.

Abstract: A display control apparatus includes a display control unit configured to display a predetermined object image on a display unit, and a light emission control unit configured to independently control light emission of a plurality of light emitting units corresponding to a plurality of division areas prepared by dividing the display unit, wherein, when a display area of the object image on the display unit is changed, the light emission control unit controls a plurality of division light emitting units other than the plurality of division light emitting units corresponding to the display area of the object image to emit light at a similar luminance to the luminance of the plurality of division light emitting units corresponding to the display area of the object image.

Abstract: A piezoelectric material contains a first component that is a rhombohedral crystal and that is configured to have a complex oxide with a perovskite structure and Curie temperature Tc1, a second component that is a crystal other than a rhombohedral crystal and that is configured to have a complex oxide with a perovskite structure and Curie temperature e Tc2, and a third component that is a rhombohedral crystal and that is configured to have a complex oxide with a perovskite structure and Curie temperature Tc3 different from the first component, and in which Tc2 is higher than Tc1, Tc3 is equal to or higher than Tc2, and a value of (0.1×Tc1+0.9×Tc2) is equal to or lower than 280° C.

Abstract: A piezoelectric element includes: a first electrode; a piezoelectric body layer which is provided on the first electrode; and a second electrode which is provided on the piezoelectric body layer, the piezoelectric body layer is made of a composite oxide with a perovskite structure, which contains bismuth, barium, iron, titanium, and strontium, and the content of strontium with respect to barium is equal to or greater than 5 mol % and equal to or less than 18 mol %.