Abstract: An electromagnetic wave sensor 1 has electromagnetic wave absorbers disposed side by side in first and second directions, temperature detection portions held by the respective electromagnetic wave absorbers and sets of two arm portions connected to each electromagnetic wave absorber at two connection portions. In a plan view, the arm portions have two first extending portions extending from the connection portions in directions of which components in the second direction are opposite to each other, and two second extending portions extending from the first extending portions in directions of which components in the first direction are opposite to each other. Four sides of a rectangle circumscribing each of the electromagnetic wave absorbers with a smallest area are inclined with respect to the first direction in directions in which each electromagnetic wave absorber is away from the second extending portions with the connection portions as fulcrums.

Abstract: An element array circuit includes one or more first wiring lines, second wiring lines, impedance elements, one or more operational amplifiers, one or more conversion elements, and one or more switchers. The second wiring lines each extend in a direction different from a direction of extension of the first wiring lines. The impedance elements are each coupled to one each of the first and second wiring lines. The operational amplifiers each include a positive input terminal, a negative input terminal couplable to one of the second wiring lines, and an output terminal. The conversion elements are each coupled to the negative input terminal and the output terminal, and each convert a current flowing through the second wiring line coupled to the negative input terminal into a voltage. The switchers are each coupled to one of the conversion elements and come into a conducting state or a nonconducting state.

Abstract: Electromagnetic wave sensor (infrared sensor) 1 has: a first substrate; a second substrate that faces the first substrate and that allows infrared rays to pass through at least a part of the second substrate; first circumferential wall 4a that is positioned between the first substrate and the second substrate and that forms first space 8a together with the first and second substrates; bolometer structures 7 that are provided in first space 8a; first measuring element 9a that is provided in first space 8a and that is used for taking a first measurement relating to pressure P1 in first space 8a; and a monitoring portion. The monitoring portion acquires the first measurement that is taken using first measuring element 9a and outputs a predetermined signal indicating an abnormality based on at least the first measurement.

Abstract: The present invention includes an electromagnetic wave detector, and a pair of arm portions and that are positioned on both sides with the electromagnetic wave detector interposed therebetween. The electromagnetic wave detector includes a temperature detection element, and electromagnetic wave absorbers which cover at least a part of the temperature detection element. Each of the arm portions includes a conductor layer which is in a line shape and electrically connected to the temperature detection element, and dielectric layers which are disposed on both sides of the conductor layer. In a short direction of the dielectric layers in a plan view, the conductor layer has a shape protruding outward beyond both end portions of the dielectric layers in the short direction.

Abstract: A structure body includes: an electromagnetic wave detector; and a pair of arm portions that are positioned on both sides with the electromagnetic wave detector interposed therebetween. The electromagnetic wave detector includes a temperature detection element and an electromagnetic wave absorber which covers at least a part of the temperature detection element. Each of the arm portions includes a wiring layer which is in a line shape and electrically connected to the temperature detection element, and protective layers, a part of each of which is disposed on corresponding one of both sides of the wiring layer. The protective layers are made of a material having a lower thermal conductivity than the wiring layer. In a short direction of the protective layers in a plan view, the wiring layer is positioned on an inward side of both end portions of the protective layers in the short direction.

Abstract: The present disclosure includes an electromagnetic wave detector, and a pair of arms that are positioned on both sides with the electromagnetic wave detector interposed therebetween. The electromagnetic wave detector includes a temperature detection element, and electromagnetic wave absorbers which cover at least a part of the temperature detection element. The structure body has a structure in which the electromagnetic wave detector is hung or suspended with respect to a substrate facing the electromagnetic wave detector via the pair of arms. Area of a surface of the pair of arms on a side facing the substrate are larger than area of surface thereof on a side opposite to the side facing the substrate.

Abstract: An electromagnetic wave sensor 1 has electromagnetic wave absorbers disposed side by side in first and second directions, temperature detection portions held by the respective electromagnetic wave absorbers and sets of two arm portions connected to each electromagnetic wave absorber at two connection portions. In a plan view, the arm portions have two first extending portions extending from the connection portions in directions of which components in the second direction are opposite to each other, and two second extending portions extending from the first extending portions in directions of which components in the first direction are opposite to each other. Four sides of a rectangle circumscribing each of the electromagnetic wave absorbers with a smallest area are inclined with respect to the first direction in directions in which each electromagnetic wave absorber is away from the second extending portions with the connection portions as fulcrums.

Abstract: An electromagnetic wave sensor has electromagnetic wave absorbers disposed side by side in first and second directions, temperature detection portions held by the respective electromagnetic wave absorbers and sets of two arm portions connected to each of the electromagnetic wave absorbers at two connection portions. In a plan view, the arm portions have two first extending portions extending from the connection portions in directions of which components in the second direction are opposite to each other, and two second extending portions extending from the first extending portions in directions of which components in the first direction are opposite to each other. Four sides of a rectangle circumscribing each of the electromagnetic wave absorbers with a smallest area are inclined with respect to the first direction in directions in which each of the electromagnetic wave absorbers approaches the second extending portions with the connection portions as fulcrums.

Abstract: Provided is a method of efficiently treating a fluid to be treated containing a compound that destroys a zeolite membrane to prevent the fluid from destroying the zeolite membrane. A fluid to be treated 10 formed of a liquid mixture or a gas mixture and containing a compound that destroys a zeolite membrane 2 is brought into contact with particles (3, 5) made of the same type of zeolites as the zeolite membrane 2 and filling a pretreatment device 4 installed upstream of a membrane module 1 including the zeolite membrane 2 or a portion upstream of the zeolite membrane 2 in the membrane module 1 to destroy the zeolite forming the particles (3, 5) and the fluid to be treated 10 is made to contain a component generated by the destruction.

Abstract: Provided is a method of efficiently treating a fluid to be treated containing a compound that destroys a zeolite membrane to prevent the fluid from destroying the zeolite membrane. A fluid to be treated 10 formed of a liquid mixture or a gas mixture and containing a compound that destroys a zeolite membrane 2 is brought into contact with particles (3, 5) made of the same type of zeolites as the zeolite membrane 2 and filling a pretreatment device 4 installed upstream of a membrane module 1 including the zeolite membrane 2 or a portion upstream of the zeolite membrane 2 in the membrane module 1 to destroy the zeolite forming the particles (3, 5) and the fluid to be treated 10 is made to contain a component generated by the destruction.

Abstract: Provided is a method of producing a zeolite film continuously and efficiently. Zeolite is formed on a surface of a support using a method including: a first step of attaching zeolite fine crystals to a surface of a support; a second step of preparing synthetic gel for growing the fine crystals; a third step of putting the support and the synthetic gel into a reactor and performing hydrothermal synthesis; and a fourth step of cleaning the support subjected to the hydrothermal synthesis, in which in the third step, multiple containers arranged to be movable in a constant-temperature apparatus are each used as the reactor, the temperature and pressure for the hydrothermal synthesis is adjusted by the temperature and pressure in the constant-temperature apparatus, and the reaction time of the hydrothermal synthesis is adjusted by setting the time from when the reactor enters the constant-temperature apparatus to when the reactor exits the constant-temperature apparatus.

Abstract: A ceramic electronic device includes: a multilayer chip having a first and a second internal electrode layers; a first and a second external electrodes covering a first a second regions of a surface of the multilayer chip, wherein: a mark is shifted on a side of one of two end faces on an upper face; the first internal electrode layer is exposed to the first region and connected to the first external electrode; the second internal electrode layer is exposed to the second region and connected to the second external electrode; the second internal electrode is shifted further on a side of the lower face than on a side of the upper face; the second internal electrode layer is shifted further on a side of the lower face than the upper face; the second region is a region of a half of the surface on the lower face side.

Abstract: Provided is a method of producing a zeolite film continuously and efficiently. The method of forming zeolite on a surface of a support is characterized in that the method includes: a first step of attaching zeolite fine crystals to a surface of a support; a second step of preparing synthetic gel for growing the fine crystals; a third step of putting the support and the synthetic gel into a continuous reactor and performing hydrothermal synthesis; and a fourth step of cleaning the support on which zeolite has been hydrothermally synthesized, and in the third step, the temperature, pressure, and flow of the synthetic gel in the continuous reactor is adjusted, the support is moved being immersed in the synthetic gel, the reaction time of the hydrothermal synthesis is adjusted by adjusting the time from when the support enters the continuous reactor to when the support exits the continuous reactor.

Abstract: A multilayer ceramic electronic device includes a pair of external electrodes respectively covering end surfaces of a main body, wherein a height of the multilayer ceramic electronic device that includes the pair of eternal electrodes is greater than 0.80 times and less than 1.25 times as much as the lessor of a width dimension of the electronic device and a length dimension of the electronic device, and wherein each of the pair of external electrodes includes a tin plating film as an outermost layer, and a thickness of the tin plating film on the end surface of the main body is smaller than a thickness of the tin plating film on side surfaces of the main body.

Abstract: Provided is a method of producing a zeolite film continuously and efficiently. The method of forming zeolite on a surface of a support is characterized in that the method includes: a first step of attaching zeolite fine crystals to a surface of a support; a second step of preparing synthetic gel for growing the fine crystals; a third step of putting the support and the synthetic gel into a continuous reactor and performing hydrothermal synthesis; and a fourth step of cleaning the support on which zeolite has been hydrothermally synthesized, and in the third step, the temperature, pressure, and flow of the synthetic gel in the continuous reactor is adjusted, the support is moved being immersed in the synthetic gel, the reaction time of the hydrothermal synthesis is adjusted by adjusting the time from when the support enters the continuous reactor to when the support exits the continuous reactor.

Abstract: Provided is a method of producing a zeolite film continuously and efficiently. Zeolite is formed on a surface of a support using a method including: a first step of attaching zeolite fine crystals to a surface of a support; a second step of preparing synthetic gel for growing the fine crystals; a third step of putting the support and the synthetic gel into a reactor and performing hydrothermal synthesis; and a fourth step of cleaning the support subjected to the hydrothermal synthesis, in which in the third step, multiple containers arranged to be movable in a constant-temperature apparatus are each used as the reactor, the temperature and pressure for the hydrothermal synthesis is adjusted by the temperature and pressure in the constant-temperature apparatus, and the reaction time of the hydrothermal synthesis is adjusted by setting the time from when the reactor enters the constant-temperature apparatus to when the reactor exits the constant-temperature apparatus.

Abstract: A multilayer ceramic electronic device includes a pair of external electrodes respectively covering end surfaces of a main body, wherein a height of the multilayer ceramic electronic device that includes the pair of eternal electrodes is greater than 0.80 times and less than 1.25 times as much as the lessor of a width dimension of the electronic device and a length dimension of the electronic device, and wherein each of the pair of external electrodes includes a tin plating film as an outermost layer, and a thickness of the tin plating film on the end surface of the main body is smaller than a thickness of the tin plating film on side surfaces of the main body.

Abstract: A laminate includes, on a substrate, a first buffer layer substantially made of zirconium oxide or stabilized zirconia, a second buffer layer substantially made of yttrium oxide, a metal layer substantially made of at least one among platinum, iridium, palladium, rhodium, vanadium, chromium, iron, molybdenum, tungsten, aluminum, silver, gold, copper, and nickel, and a magnesium oxide layer substantially made of magnesium oxide, in this order.

Abstract: A ceramic electronic device includes: a multilayer chip having a first and a second internal electrode layers; a first and a second external electrodes covering a first a second regions of a surface of the multilayer chip, wherein: a mark is shifted on a side of one of two end faces on an upper face; the first internal electrode layer is exposed to the first region and connected to the first external electrode; the second internal electrode layer is exposed to the second region and connected to the second external electrode; the second internal electrode is shifted further on a side of the lower face than on a side of the upper face; the second internal electrode layer is shifted further on a side of the lower face than the upper face; the second region is a region of a half of the surface on the lower face side.

Abstract: The device includes heat transfer portions, each of which is configured to thermally connect: one electrode provided on one side of a hot junction side and a cold junction side of each thermoelectric conversion element; and a heat transfer member. A base material has recesses on a second surface side, the recesses being provided so as to be recessed in a range of a region which overlaps with interspaces between other electrodes provided on other side of the hot junction side and the cold junction side of the each thermoelectric conversion element in a plan view. A low thermal expansion layer is provided on a surface side of each of the thermoelectric conversion element facing the heat transfer member or a high thermal expansion layer is provided on a surface side of each of the thermoelectric conversion elements facing the recess.