Abstract: An amplifier circuit includes a first MOS transistor whose source is connected to a first power source and which amplifies a signal that is input to a gate and outputs the amplified signal from a drain, a second MOS transistor whose source is connected to the first power source, and a back gate voltage control element that controls the voltage a back gate of the second MOS transistor so that the voltage associated with the drain of the second MOS transistor and the voltage of the gate of the second MOS transistor are equal to each other, and which applies the controlled voltage to the back gate of the first MOS transistor.

Abstract: A high-frequency generator circuit comprises a signal generating circuit, a delay unit, a selector, a synthesizer circuit, and a controller. The signal generating circuit generates a signal having the same frequency as an output signal. The delay unit includes a plurality of delay circuits, and delays the signal generated by the signal generating circuit. The selector selects an output signal of the delay circuits. The synthesizer circuit synthesizes the signal selected by the selector, and outputs the output signal. The controller controls the selector based on data for setting a waveform of the output signal and a control signal for setting at least amplitude, phase and frequency of the output signal.

Abstract: A high-frequency generator circuit comprises a signal generating circuit, a delay unit, a selector, a synthesizer circuit, and a controller. The signal generating circuit generates a signal having the same frequency as an output signal. The delay unit includes a plurality of delay circuits, and delays the signal generated by the signal generating circuit. The selector selects an output signal of the delay circuits. The synthesizer circuit synthesizes the signal selected by the selector, and outputs the output signal. The controller controls the selector based on data for setting a waveform of the output signal and a control signal for setting at least amplitude, phase and frequency of the output signal.

Abstract: A parallel wiring according to the present invention includes a plurality of differential lines juxtaposed in a reference direction, wherein each differential line includes two wiring lines which are substantially parallel to each other, and the two wiring lines oppose each other obliquely with respect to the reference direction.

Abstract: A variable inductor includes an insulating substrate (1), a thermally softenable spiral coil (2) provided on the insulating substrate (1), and a pair of input/output terminals (3, 4) each connected electrically to a respective end of the coil (2). Preferably, the coil (2) is made from a non-crystalline thin film metallic glass which softens in a supercooled liquid phase.

Abstract: A parallel wiring according to the present invention includes a plurality of differential lines juxtaposed in a reference direction, wherein each differential line includes two wiring lines which are substantially parallel to each other, and the two wiring lines oppose each other obliquely with respect to the reference direction.

Abstract: In a code division multiple communication system which prevents the dropout of a whole packet and does not require the generation of a carrier from a received signal, under bad communication path, by generating an orthogonal code with chip synchronization from a correlation peak of a synchronization code sequence output from a surface acoustic wave matched filter, a preamble division of a spectrum spread signal is composed of plural synchronization burst. Each synchronization burst is composed of a synchronization packet division having the Barker code of 11 chips and a dummy division. The period of one synchronization burst (Tburst) is set equally to the period of one symbol in a data division (Tsymbol) which is modulated by the orthogonal sequential code of 64 chips. When the correlation peak of at least one from among plural synchronization code sequences is detected, the orthogonal code can be generated in accordance with the start timing of the first symbol in the data division.

Abstract: A variable inductor includes an insulating substrate (1), a thermally softenable spiral coil (2) provided on the insulating substrate (1), and a pair of input/output terminals (3, 4) each connected electrically to a respective end of the coil (2). Preferably, the coil (2) is made from a non-crystalline thin film metallic glass which softens in a supercooled liquid phase.

Abstract: A semiconductor device comprising a substrate, a conductor and an insulating film provided on the surface of the substrate, part of the surface of the substrate being electrically connected with the conductor through a contact hole made in the insulating film, wherein a barrier layer present between part of the surface of the substrate and the conductor is provided only on the bottom of the contact hole, and the barrier layer provided on the bottom comprises amorphous titanium silicon nitride. This can provide a structure that has a barrier layer with a low contact resistance, enables formation of a conductor film of good quality on the barrier layer, and can attain a good electrical conduction even at fine contact holes.

Abstract: A semiconductor device comprising a substrate, a conductor and an insulating film provided on the surface of the substrate, part of the surface of the substrate being electrically connected with the conductor through a contact hole made in the insulating film, wherein a barrier layer present between part of the surface of the substrate and the conductor is provided only on the bottom of the contact hole, and the barrier layer provided on the bottom comprises amorphous titanium silicon nitride.

Abstract: A code division multiplex communications system has a receiver for receiving a radio wave and transforming the radio wave to an electric signal. A voltage-current converter converts the electric signal to a current signal. A current delay mechanism then sequentially reads the electric signal during a clock pulse. Adders and subtractors manipulated output currents of the current delay mechanism in accordance with a spread code and a reproducing mechanism reproducing a transmission signal depending on the output of the adder and subtractor.

Abstract: A semiconductor device comprising a substrate, a conductor and an insulating film provided on the surface of the substrate, part of the surface of the substrate being electrically connected with the conductor through a contact hole made in the insulating film, wherein a barrier layer present between part of the surface of the substrate and the conductor is provided only on the bottom of the contact hole, and the barrier layer provided on the bottom comprises amorphous titanium silicon nitride.

Abstract: A code division multiplex communications system comprising: receiving circuit for receiving a radio wave and transforming the radio wave to an electric signal; delaying circuit for sequentially reading the electric signal at a timing of a clock pulse; switching circuit for shutting off a drive current of the delaying circuit at an OFF timing of the clock pulse; adding and subtracting circuit for adding and subtracting outputs of the delaying circuit in accordance with a spread code; and reproducing circuit for reproducing a transmission signal on the basis of an output of the adding and subtracting circuit. RCS95-120 is similar with respect to a point that an analog LSI matched filter is constructed by a slide capacitor system.

Abstract: A process and apparatus for forming an Al film of good quality according to the CVD method utilizing the reaction between alkyl aluminum hydride and hydrogen, which is an excellent deposited film formation process also capable of selective deposition of Al. Pressure in a deposition chamber is maintained from 10.sup.-3 to 760 Torr. Alkyl aluminum hydride and hydrogen gas are introduced at a partial pressure from 1.5.times.10.sup.-5 to 1.3.times.10.sup.-3 of the pressure in the chamber. Aluminum is deposited on a substrate in the chamber by heating the substrate sufficiently to decompose the alkyl aluminum hydride.

Abstract: A process for forming a deposited film on a substrate according to the chemical vapor deposition method comprises previously forming excited species of a gas phase compound containing atoms which become constituents constituting said deposited film, supplying the excited species onto the surface of said substrate and effecting photoirradiation on said substrate surface, thereby forming the deposited film through the surface reaction.

Abstract: A gas-feeding device for feeding a starting gas for deposition-film-formation by the chemical vapor deposition method, comprising a container having a space for discharging the starting gas containing an organometallic compound by introduction of a carrier gas; a gas-introducing means connected to the container for introducing a carrier gas is described. A plurality of openings for introducing the organometallic compound into the container is also provided, wherein each opening is part of an atomizer employing a piezoelectric element to eject the organometallic compound in a mist state into the container where the carrier gas passes through the space, and a container is provided for storing the organometallic compound.

Abstract: A chemical vapor deposition process is disclosed comprising the steps of forming liquid droplets of a liquid raw material; injecting the liquid droplets through a plate member opening placed opposite to the surface of the substrate to vaporize the liquid droplets; and supplying a reaction gas that reacts with the vaporized raw material; and depositing a thin film on the substrate.

Abstract: A gas-feeding device for feeding a starting gas for forming a deposited film by the chemical vapor deposition method, comprising a storage area for an organometallic compound having a high viscosity, wherein the storage area has a space for discharging a starting gas containing the organometallic compound by introducing a carrier gas into the storage area. The carrier gas is introduced into the organometallic gas via a gas-introducing member having a number of openings. An ultrasonic oscillator is provided in the storage area to generate cavitation in the organometallic compound. A deposited-film forming apparatus incorporating the gas-feeding device is also described.

Abstract: A process for forming a deposited film on a substrate according to the chemical vapor deposition method comprises previously forming excited species of a gas phase compound containing atoms which become constituents constituting said deposited film, supplying the excited species onto the surface of said substrate and effecting photoirradiation on said substrate surface, thereby forming the deposited film through the surface reaction.

Abstract: A process for thin film formation comprises selectively irradiating with an energy ray a substrate to the surface of which a surface treatment for providing hydrogen atoms is applied to thereby form an irradiated region and a non-irradiated region on the surface of the substrate, and forming a thin film selectively on the non-irradiated region.