Abstract: A method for producing a glass substrate according to the present invention includes the steps of: (I) forming a through hole (11) in a glass sheet (10); (II) forming a resin layer (20) on a first principal surface of the glass sheet (10) using a resin composition sensitive to light having a predetermined wavelength ?1; (III) photoexposing an area of the resin layer (20) that covers the through hole (11) by irradiating the area with light U having the wavelength ?1 and applied from the direction of a second principal surface of the glass sheet (10); and (IV) forming a through-resin hole (21) by removing the area photoexposed in the step (III). The glass sheet (10) protects the resin layer (20) from the light U so as to prevent the resin layer (20) from being photoexposed by beams of the light U that are incident on the second principal surface of the glass sheet (10) in the step (III).

Abstract: The glass composition according to the present invention is a glass composition including SiO2, B2O3, Al2O3, an alkaline-earth metal oxide and another metal oxide. When an average thermal expansion coefficient of the glass composition in a temperature range of 0° C. to T° C. is expressed as CTE (T), a relationship of (17.1×10?3×T+25.4)×10?7/° C.?CTE (T)?(17.1×10?3×T+31.4)×10?7/° C. is satisfied in a temperature range of 0° C. to 100° C.

Abstract: A method for producing a glass substrate with through glass vias according to the present invention includes: irradiating a glass substrate (10) with a laser beam to form a modified portion; forming a first conductive portion (20a) on a first principal surface of the glass substrate (10), the first conductive portion (20a) being positioned in correspondence with the modified portion (12); and forming a through hole (14) in the glass substrate (10) after formation of the first conductive portion by etching at least the modified portion (12) using an etchant. This method allows easy handling of a glass substrate during formation of a conductive portion such as a circuit on the glass substrate, and is also capable of forming a through hole in the glass substrate relatively quickly while preventing damage to the conductive portion such as a circuit formed on the glass substrate.

Abstract: A method for producing a glass substrate with through glass vias according to the present invention includes: irradiating a glass substrate (10) with a laser beam to form a modified portion; forming a first conductive portion (20a) on a first principal surface of the glass substrate (10), the first conductive portion (20a) being positioned in correspondence with the modified portion (12); and forming a through hole (14) in the glass substrate (10) after formation of the first conductive portion by etching at least the modified portion (12) using an etchant. This method allows easy handling of a glass substrate during formation of a conductive portion such as a circuit on the glass substrate, and is also capable of forming a through hole in the glass substrate relatively quickly while preventing damage to the conductive portion such as a circuit formed on the glass substrate.

Abstract: A method for producing a glass substrate according to the present invention includes the steps of: (I) forming a through hole (11) in a glass sheet (10); (II) forming a resin layer (20) on a first principal surface of the glass sheet (10) using a resin composition sensitive to light having a predetermined wavelength ?1; (III) photoexposing an area of the resin layer (20) that covers the through hole (11) by irradiating the area with light U having the wavelength ?1 and applied from the direction of a second principal surface of the glass sheet (10); and (IV) forming a through-resin hole (21) by removing the area photoexposed in the step (III). The glass sheet (10) protects the resin layer (20) from the light U so as to prevent the resin layer (20) from being photoexposed by beams of the light U that are incident on the second principal surface of the glass sheet (10) in the step (III).

Abstract: A method for producing a glass substrate according to the present invention includes the steps of: (I) forming a through hole (11) in a glass sheet (10); (II) forming a resin layer (20) on a first principal surface of the glass sheet (10) using a resin composition sensitive to light having a predetermined wavelength ?1; (III) photoexposing an area of the resin layer (20) that covers the through hole (11) by irradiating the area with light U having the wavelength ?1 and applied from the direction of a second principal surface of the glass sheet (10); and (IV) forming a through-resin hole (21) by removing the area photoexposed in the step (III). The glass sheet (10) protects the resin layer (20) from the light U so as to prevent the resin layer (20) from being photoexposed by beams of the light U that are incident on the second principal surface of the glass sheet (10) in the step (III).

Abstract: A method for producing a glass substrate with through glass vias according to the present invention includes: irradiating a glass substrate (10) with a laser beam to form a modified portion; forming a first conductive portion (20a) on a first principal surface of the glass substrate (10), the first conductive portion (20a) being positioned in correspondence with the modified portion (12); and forming a through hole (14) in the glass substrate (10) after formation of the first conductive portion by etching at least the modified portion (12) using an etchant. This method allows easy handling of a glass substrate during formation of a conductive portion such as a circuit on the glass substrate, and is also capable of forming a through hole in the glass substrate relatively quickly while preventing damage to the conductive portion such as a circuit formed on the glass substrate.

Abstract: A method for producing a glass substrate with through glass vias according to the present invention includes: irradiating a glass substrate (10) with a laser beam to form a modified portion; forming a first conductive portion (20a) on a first principal surface of the glass substrate (10), the first conductive portion (20a) being positioned in correspondence with the modified portion (12); and forming a through hole (14) in the glass substrate (10) after formation of the first conductive portion by etching at least the modified portion (12) using an etchant. This method allows easy handling of a glass substrate during formation of a conductive portion such as a circuit on the glass substrate, and is also capable of forming a through hole in the glass substrate relatively quickly while preventing damage to the conductive portion such as a circuit formed on the glass substrate.

Abstract: A method for producing a glass substrate with through glass vias according to the present invention includes: irradiating a glass substrate (10) with a laser beam to form a modified portion; forming a first conductive portion (20a) on a first principal surface of the glass substrate (10), the first conductive portion (20a) being positioned in correspondence with the modified portion (12); and forming a through hole (14) in the glass substrate (10) after formation of the first conductive portion by etching at least the modified portion (12) using an etchant. This method allows easy handling of a glass substrate during formation of a conductive portion such as a circuit on the glass substrate, and is also capable of forming a through hole in the glass substrate relatively quickly while preventing damage to the conductive portion such as a circuit formed on the glass substrate.

Abstract: A method for producing a glass substrate according to the present invention includes the steps of: (I) forming a through hole (11) in a glass sheet (10); (II) forming a resin layer (20) on a first principal surface of the glass sheet (10) using a resin composition sensitive to light having a predetermined wavelength ?1; (III) photoexposing an area of the resin layer (20) that covers the through hole (11) by irradiating the area with light U having the wavelength ?1 and applied from the direction of a second principal surface of the glass sheet (10); and (IV) forming a through-resin hole (21) by removing the area photoexposed in the step (III). The glass sheet (10) protects the resin layer (20) from the light U so as to prevent the resin layer (20) from being photoexposed by beams of the light U that are incident on the second principal surface of the glass sheet (10) in the step (III).

Abstract: A composite semiconductor device is formed of a semiconductor wafer having a plurality of device-forming areas in which semiconductor elements are formed and dicing areas defined between the device-forming areas, and is formed by dicing the semiconductor wafer at the dicing areas. The composite semiconductor device includes a semiconductor substrate, and a plurality of wiring layers layered on the semiconductor substrate. The wiring layers include at least conductive films. Connecting portions are formed to connect the wiring layers with each other in a layering direction of the wiring layers. Each of the connecting portions is disposed on the device-forming area side with respect to a dicing position defined in the dicing area.

Abstract: A composite semiconductor device is formed of a semiconductor wafer having a plurality of device-forming areas in which semiconductor elements are formed and dicing areas defined between the device-forming areas, and is formed by dicing the semiconductor wafer at the dicing areas. The composite semiconductor device includes a semiconductor substrate, and a plurality of wiring layers layered on the semiconductor substrate. The wiring layers include at least conductive films. Connecting portions are formed to connect the wiring layers with each other in a layering direction of the wiring layers. Each of the connecting portions is disposed on the device-forming area side with respect to a dicing position defined in the dicing area.

Abstract: A mother glass composition for graded index lenses, comprising the following glass components in mol %: 40?SiO2?65, 1?TiO2?10, 0?MgO?22, 2?Li2O?18, 2?Na2O ?20, 6?Li2O+Na2O?38, and from 0.1 to 15 mol % of any two or more of CaO, SrO and BaO, a graded index lens using the mother glass composition, a manufacturing method of the graded index lens, and an optical product and an optical instrument using the graded index lens, are provided.

Abstract: A mother glass composition for graded index lenses, comprising the following glass components in mol %: 40?SiO2?65, 1?TiO2?10, 0?MgO?22, 2?Li2O?18, 2?Na2O?20, 6?Li2O+Na2O?38, and from 0.1 to 15 mol % of any two or more of CaO, SrO and BaO, a graded index lens using the mother glass composition, a manufacturing method of the graded index lens, and an optical product and an optical instrument using the graded index lens, are provided.

Abstract: A light emitting diode array includes a light emitting area formed on a semiconductor substrate, a diffusion prevention layer formed on the semiconductor substrate, and an insulating layer formed on the diffusion prevention layer. The diffusion prevention layer has a lower edge and the insulating layer has a level drop at this lower edge. An interconnection conductor extends on the insulating layer and is in ohmic contact with the light emitting region through holes in the insulating layer and the diffusion prevention layer. The interconnection conductor has a stepped portion at the level drop of the insulating layer, the stepped portion being located in a wide-width segment of the interconnection conductor.

Abstract: A light emitting diode array includes a light emitting area formed on a semiconductor substrate, a diffusion prevention layer formed on the semiconductor substrate, and an insulating layer formed on the diffusion prevention layer. The diffusion prevention layer has a lower edge and the insulating layer has a level drop at this lower edge. An interconnection conductor extends on the insulating layer and is in ohmic contact with the light emitting region through holes in the insulating layer and the diffusion prevention layer. The interconnection conductor has a stepped portion at the level drop of the insulating layer, the stepped portion being located in a wide-width segment of the interconnection conductor.