Patents by Inventor Kazuya Ouchi

Kazuya Ouchi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of fabrication of semiconductor device
    Patent number: 7157340
    Abstract: A manufacturing method of a semiconductor device, the method including implanting impurity ions into a silicon layer and irradiating a pulsed light having a pulse width of 100 milliseconds or less and a rise time of 0.3 milliseconds or more onto the silicon layer thereby activating the impurity ions. The rise time is defined as a time interval of a leading edge between an instant at which the pulsed light starts to rise and an instant at which the pulsed light reaches a peak energy.
    Type: Grant
    Filed: February 9, 2005
    Date of Patent: January 2, 2007
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takayuki Ito, Kyoichi Suguro, Kanna Tomiie, Kazuya Ouchi
  • Method of fabrication of semiconductor device
    Publication number: 20050202656
    Abstract: A manufacturing method of a semiconductor device, the method including implanting impurity ions into a silicon layer and irradiating a pulsed light having a pulse width of 100 milliseconds or less and a rise time of 0.3 milliseconds or more onto the silicon layer thereby activating the impurity ions. The rise time is defined as a time interval of a leading edge between an instant at which the pulsed light starts to rise and an instant at which the pulsed light reaches a peak energy.
    Type: Application
    Filed: February 9, 2005
    Publication date: September 15, 2005
    Inventors: Takayuki Ito, Kyoichi Suguro, Kanna Tomiie, Kazuya Ouchi