Abstract: The present invention provides a zirconia pre-sintered body having excellent machinability and having a low probability of pillar fracture or chipping during milling. A method of production of such a zirconia pre-sintered body is also provided. The present invention relates to a zirconia pre-sintered body comprising zirconia, and a stabilizer capable of reducing a phase transformation of zirconia, the content of the stabilizer being 3 to 8 mol % relative to the total mole of the zirconia and the stabilizer, at least a part of the stabilizer being not dissolved in zirconia as a solid solution, and the zirconia pre-sintered body having a Vickers hardness of 65 to 135 HV 5/30 as measured in compliance with JIS Z 2244:2009.

Abstract: There is provided a flight management system for managing a flight plan of flying objects that fly among ports.

Abstract: A mask blank is provided in which a phase-shift film is provided on a transparent substrate, the phase-shift film having a predetermined transmittance to ArF exposure light and being configured to shift a phase of ArF exposure light transmitted therethrough, wherein the phase-shift film comprises a nitrogen-containing layer that is formed from a material containing silicon and nitrogen and does not contain a transition metal, and wherein a content of oxygen in the nitrogen-containing layer, when measured by X-ray photoemission spectroscopy, is below a detection limit.

Abstract: An object of the present invention is to provide a flow type reaction device which is capable of maintaining reaction efficiency and productivity which are sufficient for practical use for a long time, and reducing the size and cost of the reaction device, and the present invention provides a flow type reaction device (1) for continuously reacting two or more kinds of raw materials, including a mixing section (10) which is configured to mix two or more kinds of the raw materials, and a reaction section (20) which is provided on a secondary side with respect to the mixing section (10), and configured to obtain a product by reacting two or more kinds of the raw materials, the mixing section (10) includes a mixing device (13) which is configured to mix two or more kinds of the raw materials, and two or more supply pipes (L11, L12) which are configured to supply each of two or more kinds of the raw materials to the mixing device (13), the supply pipes (L11, L12) are respectively connected to the mixing device (13

Abstract: There is provided a flight management system for managing a flight plan of flying objects that fly among ports.

Abstract: A mask blank is provided in which a phase-shift film is provided on a transparent substrate, the phase-shift film having a predetermined transmittance to ArF exposure light and being configured to shift a phase of ArF exposure light transmitted therethrough, wherein the phase-shift film comprises a nitrogen-containing layer that is formed from a material containing silicon and nitrogen and does not contain a transition metal, and wherein a content of oxygen in the nitrogen-containing layer, when measured by X-ray photoemission spectroscopy, is below a detection limit.

Abstract: Provided is a mask blank in which uniformity of the composition and optical characteristics of a phase-shift film in the in-plane direction and direction of film thickness is high, uniformity of the composition and optical characteristics of the phase-shift film between a plurality of substrates is also high, and defectivity is low even if a silicon-based material is applied to the material that forms the phase-shift film.

Abstract: Provided is a mask blank in which uniformity of the composition and optical characteristics of a phase-shift film in the in-plane direction and direction of film thickness is high, uniformity of the composition and optical characteristics of the phase-shift film between a plurality of substrates is also high, and defectivity is low even if a silicon-based material is applied to the material that forms the phase-shift film.

Abstract: Provided is a mask blank in which uniformity of the composition and optical characteristics of a phase-shift film in the in-plane direction and direction of film thickness is high, uniformity of the composition and optical characteristics of the phase-shift film between a plurality of substrates is also high, and defectivity is low even if a silicon-based material is applied to the material that forms the phase-shift film.

Abstract: Provided is a sensor system capable of more accurately detecting abnormality. A sensor IC includes a first detector, a second detector, and a communication circuit. The first detector and the second detector output a first digital value and a second digital value according to the strength of a magnetic flux applied thereto, respectively. The communication circuit transmits the first and second digital values received from the first and second detectors to a control device. At this time, the communication circuitplaces the first and second digital values in a plurality of frames to transmit the plurality of frames. The communication circuit forms the plurality of frames such that bit information data of the first and second digital values placed in the frames is arranged in different orders between the first and second digital values.

Abstract: Provided is a mask blank in which uniformity of the composition and optical characteristics of a phase-shift film in the in-plane direction and direction of film thickness is high, uniformity of the composition and optical characteristics of the phase-shift film between a plurality of substrates is also high, and defectivity is low even if a silicon-based material is applied to the material that forms the phase-shift film.

Abstract: Provided is a mask blank in which uniformity of the composition and optical characteristics of a phase-shift film in the in-plane direction and direction of film thickness is high, uniformity of the composition and optical characteristics of the phase-shift film between a plurality of substrates is also high, and defectivity is low even if a silicon-based material is applied to the material that forms the phase-shift film.

Abstract: The present invention is a reflective mask blank used to fabricate a reflective mask, which has a laminated structure of a multilayer reflective film, an absorber film and an etching mask film in this order on a substrate, wherein the etching mask film comprises a material containing chromium, the absorber film comprises a material containing tantalum, a highly oxidized layer is formed on the surface layer of the absorber film on the opposite side from the substrate, and a Ta 4f narrow spectrum of the highly oxidized layer when analyzed by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of more than 23 eV.

Abstract: Provided is a mask blank in which uniformity of the composition and optical characteristics of a phase-shift film in the in-plane direction and direction of film thickness is high, uniformity of the composition and optical characteristics of the phase-shift film between a plurality of substrates is also high, and defectivity is low even if a silicon-based material is applied to the material that forms the phase-shift film.

Abstract: Provided is a method of manufacturing a mask blank that is improved in cleaning resistance to ozone cleaning or the like, thus capable of preventing degradation of the mask performance due to the cleaning. The method is for manufacturing a mask blank having, on a substrate, a thin film which is formed at its surface with an antireflection layer made of a material containing a transition metal, and carries out a treatment of causing a highly concentrated ozone gas with a concentration of 50 to 100 vol % to act on the antireflection layer to thereby form a surface modified layer comprising a strong oxide film containing an oxide of the transition metal at a surface of the antireflection layer.

Abstract: Provided are a phase shift mask blank that is improved in the irradiation durability of a light-semitransmissive film (phase shift film), made of a material containing mainly a transition metal, silicon, and nitrogen, to exposure light having a wavelength of 200 nm or less and thus can improve the mask lifetime, a method of manufacturing such a phase shift mask blank, and a phase shift mask. The phase shift mask blank is used for manufacturing a phase shift mask adapted to be applied with ArF excimer laser exposure light. The phase shift mask blank has a light-semitransmissive film on a transparent substrate. The light-semitransmissive film is an incomplete nitride film containing mainly a transition metal, silicon, and nitrogen. The content ratio of the transition metal to the transition metal and the silicon in the light-semitransmissive film is less than 9%.

Abstract: Provided is a sensor system capable of more accurately detecting abnormality. A sensor IC includes a first detector, a second detector, and a communication circuit. The first detector and the second detector output a first digital value and a second digital value according to the strength of a magnetic flux applied thereto, respectively. The communication circuit transmits the first and second digital values received from the first and second detectors to a control device. At this time, the communication circuit places the first and second digital values in a plurality of frames to transmit the plurality of frames. The communication circuit forms the plurality of frames such that bit information data of the first and second digital values placed in the frames is arranged in different orders between the first and second digital values.

Abstract: Provided is a mask blank in which uniformity of the composition and optical characteristics of a phase-shift film in the in-plane direction and direction of film thickness is high, uniformity of the composition and optical characteristics of the phase-shift film between a plurality of substrates is also high, and defectivity is low even if a silicon-based material is applied to the material that forms the phase-shift film.

Abstract: Provided is a method of manufacturing a mask blank that is improved in cleaning resistance to ozone cleaning or the like, thus capable of preventing degradation of the mask performance due to the cleaning. The method is for manufacturing a mask blank having, on a substrate, a thin film which is formed at its surface with an antireflection layer made of a material containing a transition metal, and carries out a treatment of causing a highly concentrated ozone gas with a concentration of 50 to 100 vol % to act on the antireflection layer to thereby form a surface modified layer comprising a strong oxide film containing an oxide of the transition metal at a surface of the antireflection layer.

Abstract: The present invention is a reflective mask blank used to fabricate a reflective mask, which has a laminated structure of a multilayer reflective film, an absorber film and an etching mask film in this order on a substrate, wherein the etching mask film comprises a material containing chromium, the absorber film comprises a material containing tantalum, a highly oxidized layer is formed on the surface layer of the absorber film on the opposite side from the substrate, and a Ta 4f narrow spectrum of the highly oxidized layer when analyzed by X-ray photoelectron spectroscopy has a maximum peak at a binding energy of more than 23 eV.