Patents by Inventor Kazuya Sugawa

Kazuya Sugawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus, method, and program for designing a mask and method for fabricating semiconductor devices
    Patent number: 7039889
    Abstract: An apparatus for designing a mask that enables quick mask design. A generation unit generates data regarding a mask pattern formed on a mask from design data regarding an exposure pattern transferred onto a semiconductor substrate. A calculation unit calculates an exposure pattern transferred onto the semiconductor substrate by applying a filter having a predetermined characteristic to the data regarding a mask pattern generated by the generation unit. A correction unit corrects the data regarding a mask pattern generated by the generation unit by comparing the exposure pattern calculated by the calculation unit and the design data.
    Type: Grant
    Filed: March 6, 2003
    Date of Patent: May 2, 2006
    Assignee: Fujitsu Limited
    Inventors: Kazuhiko Takahashi, Masahiko Minemura, Mitsuo Sakurai, Kazuya Sugawa
  • Wavelength-independent exposure pattern generation method and exposure pattern generation system for lithography
    Patent number: 6800428
    Abstract: A method of generating an exposure pattern for lithography to create a plurality of patterns arranged in a predetermined direction, comprises a step of counting the plurality of patterns along this predetermined direction, and generating a first enlarged pattern by moving the edges to a first direction along the predetermined direction for a pattern with an odd number, and by moving the edges to a second direction, which is opposite to the first direction, for a pattern with an even number, and a step of generating a second enlarged pattern by moving the edges to the second direction for the pattern with an odd number, and by moving the edges to the first direction for the pattern with an even number. And the first and second patterns are used for creating the plurality of original patterns in a lithography step using the respective enlarged patterns.
    Type: Grant
    Filed: April 29, 2002
    Date of Patent: October 5, 2004
    Assignee: Fujitsu Limited
    Inventors: Tomoyuki Okada, Taketoshi Omata, Kazuya Sugawa, Kiyokazu Aiso, Masao Sugiyama, Tomoaki Kawaguchi
  • Apparatus, method, and program for designing a mask and method for fabricating semiconductor devices
    Publication number: 20030200523
    Abstract: An apparatus for designing a mask that enables quick mask design. A generation unit generates data regarding a mask pattern formed on a mask from design data regarding an exposure pattern transferred onto a semiconductor substrate. A calculation unit calculates an exposure pattern transferred onto the semiconductor substrate by applying a filter having a predetermined characteristic to the data regarding a mask pattern generated by the generation unit. A correction unit corrects the data regarding a mask pattern generated by the generation unit by comparing the exposure pattern calculated by the calculation unit and the design data.
    Type: Application
    Filed: March 6, 2003
    Publication date: October 23, 2003
    Applicant: Fujitsu Limited
    Inventors: Kazuhiko Takahashi, Masahiko Minemura, Mitsuo Sakurai, Kazuya Sugawa
  • Wavelength-independent exposure pattern generation method and exposure pattern generation system for lithography
    Publication number: 20030087193
    Abstract: A method of generating an exposure pattern for lithography to create a plurality of patterns arranged in a predetermined direction, comprises a step of counting the plurality of patterns along this predetermined direction, and generating a first enlarged pattern by moving the edges to a first direction along the predetermined direction for a pattern with an odd number, and by moving the edges to a second direction, which is opposite to the first direction, for a pattern with an even number, and a step of generating a second enlarged pattern by moving the edges to the second direction for the pattern with an odd number, and by moving the edges to the first direction for the pattern with an even number. And the first and second patterns are used for creating the plurality of original patterns in a lithography step using the respective enlarged patterns.
    Type: Application
    Filed: April 29, 2002
    Publication date: May 8, 2003
    Applicant: FUJITSU LIMITED
    Inventors: Tomoyuki Okada, Taketoshi Omata, Kazuya Sugawa, Kiyokazu Aiso, Masao Sugiyama, Tomoaki Kawaguchi