Patents by Inventor Kazuya Terabe
Kazuya Terabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220029194Abstract: A solid electrolyte according to the present disclosure has a composition represented by MgxZry(POz)2 (0<x?3.5, 0?y<1.5, and 3?z?4.25), and includes an amorphous part. The composition may be represented by Mgx(POz)2 (3?x?3.5 and 3?z?4.25). The composition may be represented by MgxZry(POz)2 (0<x<3.5, 0<y<1.5, and 3?z?4.25).Type: ApplicationFiled: September 24, 2021Publication date: January 27, 2022Inventors: Takuji TSUJITA, Yu NISHITANI, Kensuke NAKURA, Tohru TSURUOKA, Kazuya TERABE, Jin SU
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Patent number: 9627499Abstract: A nonvolatile three-terminal element is provided that operates by controlling a bandgap in an electron state of a graphene-based material. An ion conductor (5) having hydrogen ion or oxygen ion conductivity is provided between graphene oxide or graphene (hereinafter, referred to as GO) (6), and a gate electrode (1). In addition, a drain electrode (2) and a source electrode (3) are provided on a GO (6) side.Type: GrantFiled: October 31, 2014Date of Patent: April 18, 2017Assignee: National Institute for Materials ScienceInventors: Kazuya Terabe, Takashi Tsuchiya, Masakazu Aono
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Publication number: 20160276453Abstract: A nonvolatile three-terminal element is provided that operates by controlling a bandgap in an electron state of a graphene-based material. An ion conductor (5) having hydrogen ion or oxygen ion conductivity is provided between graphene oxide or graphene (hereinafter, referred to as GO) (6), and a gate electrode (1). In addition, a drain electrode (2) and a source electrode (3) are provided on a GO (6) side.Type: ApplicationFiled: October 31, 2014Publication date: September 22, 2016Inventors: Kazuya TERABE, Takashi TSUCHIYA, Masakazu AONO
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Patent number: 8896033Abstract: The object of the invention is to provide a three-terminal switch (electrochemical transistor) capable of achieving sharp on-off operation. A source electrode and a drain electrode are juxtaposed with an insulator interposed between them, and on the assembly there is an ion diffusion member such as Ta2O5 located. On the opposite surface of the ion diffusion member, there is a gate electrode located that is capable of supplying metal ions such as copper ions. By application of voltage to the gate electrode, the metal ions going out of the gate electrode are reversibly precipitated as metal on both source and drain electrodes as well as on the insulator near them, thereby controlling conduction and non-conduction between the source electrode and the drain electrode.Type: GrantFiled: September 8, 2011Date of Patent: November 25, 2014Assignee: National Institute for Materials ScienceInventors: Tsuyoshi Hasegawa, Masakazu Aono, Kazuya Terabe, Tohru Tsuruoka, Yaomi Itoh
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Publication number: 20130140648Abstract: The object of the invention is to provide a three-terminal switch (electrochemical transistor) capable of achieving sharp on-off operation. A source electrode and a drain electrode are juxtaposed with an insulator interposed between them, and on the assembly there is an ion diffusion member such as Ta2O5 located. On the opposite surface of the ion diffusion member, there is a gate electrode located that is capable of supplying metal ions such as copper ions. By application of voltage to the gate electrode, the metal ions going out of the gate electrode are reversibly precipitated as metal on both source and drain electrodes as well as on the insulator near them, thereby controlling conduction and non-conduction between the source electrode and the drain electrode.Type: ApplicationFiled: September 8, 2011Publication date: June 6, 2013Inventors: Tsuyoshi Hasegawa, Masakazu Aono, Kazuya Terabe, Tohru Tsuruoka, Yaomi Itoh
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Patent number: 8320154Abstract: A micro-switching element provided with a first electrode 4 containing an ionic conductor and a second electrode 5 composed of an electric conductor, wherein the first electrode 4 and the second electrode 5 are physically and electrically connected to each other through deposition of a metal ion from the ionic conductor, and wherein a photoresponsive film 9 that receives light to generate a carrier is disposed between the first electrode 4 and the second electrode 5 to fill up the space between the electrodes. Accordingly, a micro-switching element is provided of which the characteristic fluctuation is small and which hardly produces a problem of operation failure.Type: GrantFiled: August 8, 2008Date of Patent: November 27, 2012Assignee: National Institute for Materials ScienceInventors: Tsuyoshi Hasegawa, Masakazu Aono, Fumiko Yano, Kazuya Terabe, Toru Tsuruoka, Tomoko Ebihara, Takuji Ogawa, Hirofumi Tanaka, Takami Hino
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Patent number: 8223427Abstract: A method of fixing a polarization-reversed region formed in a ferroelectric single crystal, including preparing a ferroelectric single crystal having a polarization-reversed region; and irradiating an ion beam or a neutral beam on the ferroelectric single crystal. The ferroelectric single crystal is a substantially stoichiometric lithium tantalate single crystal or a substantially stoichiometric lithium niobate single crystal, and the polarization-reversed region is fixed and any back switch and expansion of the polarization-reversed region are suppressed.Type: GrantFiled: March 5, 2007Date of Patent: July 17, 2012Assignee: National Institute for Materials ScienceInventors: Xiaoyan Liu, Shunji Takekawa, Kazuya Terabe, Shunichi Hishita, Kenji Kitamura
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Publication number: 20110273920Abstract: A micro-switching element provided with a first electrode 4 containing an ionic conductor and a second electrode 5 composed of an electric conductor, wherein the first electrode 4 and the second electrode 5 are physically and electrically connected to each other through deposition of a metal ion from the ionic conductor, and wherein a photoresponsive film 9 that receives light to generate a carrier is disposed between the first electrode 4 and the second electrode 5 to fill up the space between the electrodes. Accordingly, a micro-switching element is provided of which the characteristic fluctuation is small and which hardly produces a problem of operation failure.Type: ApplicationFiled: August 8, 2008Publication date: November 10, 2011Inventors: Tsuyoshi Hasegawa, Masakazu Aono, Fumiko Yano, Kazuya Terabe, Toru Tsuruoka, Tomoko Ebihara, Takuji Ogawa, Hirofumi Tanaka, Takami Hino
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Patent number: 7976717Abstract: Provided are a method and an apparatus for forming a nanometer-order polarization-reversed region in a ferroelectric single crystal, and a device using the ferroelectric single crystal. The method according to the present invention for forming a polarization-reversed region in a ferroelectric single crystal includes the steps of grounding a first surface of the ferroelectric single crystal, and irradiating a second surface of the ferroelectric single crystal opposite to the first surface with an ion beam. The ion beam is irradiated such that the charge density Q (?C/cm2) accumulated on the second surface irradiated with the ion beam satisfies the following relationship: 0.7×Ps?Q?5×Ps where Ps is the spontaneous polarization (?C/cm2) of the ferroelectric single crystal.Type: GrantFiled: October 25, 2006Date of Patent: July 12, 2011Assignee: National Institute for Materials ScienceInventors: Xijun Li, Kazuya Terabe, Kenji Kitamura, Hideki Hatano
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Patent number: 7875883Abstract: The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte. In a storage cell, a metal is stacked on a drain diffusion layer of a field-effect transistor formed on a semiconductor substrate surface. The solid electrolyte using the metal as a carrier is stacked on the metal. The solid electrolyte contacts with the metal via a gap, and the metal is connected to a common grounding conductor. A source of the field-effect transistor is connected to a column address line, and a gate of the field-effect transistor is connected to a row address line.Type: GrantFiled: September 24, 2002Date of Patent: January 25, 2011Assignees: Japan Science and Technology Agency, Riken, NEC CorporationInventors: Toshitsugu Sakamoto, Masakazu Aono, Tsuyoshi Hasegawa, Tomonobu Nakayama, Kazuya Terabe, Hisao Kawaura, Tadahiko Sugibayashi
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Publication number: 20090231703Abstract: A method of fixing polarization-reversed regions formed in a ferroelectric single crystal with ease and an optical element containing such a ferroelectric single crystal are provided. The method of fixing the polarization-reversed regions formed in a ferroelectric single crystal is characterized by including a step of irradiating an ion beam or a neutral beam on the ferroelectric single crystal where polarization-reversed regions are formed. An optical element containing such a ferroelectric single crystal is characterized by being manufactured by a method including such a step.Type: ApplicationFiled: March 5, 2007Publication date: September 17, 2009Applicant: NATIONAL INSTITUTE FOR MATERIALS SCIENCEInventors: Xiaoyan Liu, Shunji Takekawa, Kazuya Terabe, Shunichi Hishita, Kenji Kitamura
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Publication number: 20090130476Abstract: Provided are a method and an apparatus for forming a nanometer-order polarization-reversed region in a ferroelectric single crystal, and a device using the ferroelectric single crystal. The method according to the present invention for forming a polarization-reversed region in a ferroelectric single crystal includes the steps of grounding a first surface of the ferroelectric single crystal, and irradiating a second surface of the ferroelectric single crystal opposite to the first surface with an ion beam. The ion beam is irradiated such that the charge density Q (?C/cm2) accumulated on the second surface irradiated with the ion beam satisfies the following relationship: 0.7×Ps?Q?5×Ps where Ps is the spontaneous polarization (?C/cm2) of the ferroelectric single crystal.Type: ApplicationFiled: October 25, 2006Publication date: May 21, 2009Applicants: NATIONAL INSTITUTE FOR MATERIALS SCIENCE, PIONEER CORPORATIONInventors: Xijun Li, Kazuya Terabe, Kenji Kitamura, Hideki Hatano
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Patent number: 7525410Abstract: There are provided a point contact array, in which a plurality of point contacts are arranged, each point contact electrically and reversibly controlling conductance between electrodes and being applicable to an arithmetic circuit, a logic circuit, and a memory device, a NOT circuit, and an electronic circuit using the same. A circuit includes a plurality of point contacts each composed of a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. The conductance of each point contact is controlled to realize the circuit. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material. When a semiconductor or insulator material is interposed between the electrodes, a crystal or an amorphous material of GeSx, GeSex, GeTex, or WOx (0<x<100) is preferably used as the semiconductor or insulator material.Type: GrantFiled: June 24, 2005Date of Patent: April 28, 2009Assignees: Japan Science and Technology Agency, RikenInventors: Masakazu Aono, Tsuyoshi Hasegawa, Kazuya Terabe, Tomonobu Nakayama
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Patent number: 7473982Abstract: A NOT circuit realized using an atomic switch serving as a two terminal device and including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material.Type: GrantFiled: August 16, 2004Date of Patent: January 6, 2009Assignees: Japan Science and Technology Agency, RikenInventors: Masakazu Aono, Tsuyoshi Hasegawa, Kazuya Terabe, Tomonobu Nakayama
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Patent number: 7446930Abstract: A problem to be solved is to provide a method of forming domain inverted regions of short period in a ferroelectric single crystal in a controllable time period of application of voltage and an optical wavelength conversion element using the same. A solving means of it solves the problem by forming (i) a control layer having a larger defect density Dcont1 than the defect density Dferro of a ferroelectric single crystal (Dferro<Dcont1) or forming (ii) a control layer having a lower degree of order of lattice points than the degree of order of lattice points of the ferroelectric single crystal on a face perpendicular to the direction of polarization of the ferroelectric single crystal in the ferroelectric single crystal.Type: GrantFiled: November 10, 2004Date of Patent: November 4, 2008Assignee: National Institute for Materials ScienceInventors: Kenji Kitamura, Sunao Kurimura, Masaru Nakamura, Shunji Takekawa, Kazuya Terabe, Shunichi Hishida, Tamaki Shimura
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Publication number: 20070053054Abstract: A problem to be solved is to provide a method of forming domain inverted regions of short period in a ferroelectric single crystal in a controllable time period of application of voltage and an optical wavelength conversion element using the same. A solving means of it solves the problem by forming (i) a control layer having a larger defect density Dcont1 than the defect density Dferro of a ferroelectric single crystal (Dferro<Dcont1) or forming (ii) a control layer having a lower degree of order of lattice points than the degree of order of lattice points of the ferroelectric single crystal on a face perpendicular to the direction of polarization of the ferroelectric single crystal in the ferroelectric single crystal.Type: ApplicationFiled: November 10, 2004Publication date: March 8, 2007Applicant: National Institute for Materials ScienceInventors: Kenji Kitamura, Sunao Kurimura, Masaru Nakamura, Shunji Takekawa, Kazuya Terabe, Shunichi Hishida, Tamaki Shimura
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Publication number: 20060157802Abstract: The present invention relates to a transistor for selecting a storage cell and a switch using a solid electrolyte. In a storage cell, a metal is stacked on a drain diffusion layer of a field-effect transistor formed on a semiconductor substrate surface. The solid electrolyte using the metal as a carrier is stacked on the metal. The solid electrolyte contacts with the metal via a gap, and the metal is connected to a common grounding conductor. A source of the field-effect transistor is connected to a column address line, and a gate of the field-effect transistor is connected to a row address line.Type: ApplicationFiled: September 24, 2002Publication date: July 20, 2006Inventors: Toshitsugu Sakamoto, Masakazu Aono, Tsuyoshi Hasegawa, Tomonbu Nakayama, Kazuya Terabe, Hisao Kawaura, Tadahiko Sugibayashi
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Patent number: 7026911Abstract: A point contact array, including plural point contacts electrically and reversibly controlling conductance between electrodes and being applicable to an arithmetic circuit, a logic circuit, a memory device, a NOT circuit, and an electronic circuit including the same. The circuit includes plural point contacts each including a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. The conductance of each point contact is controlled to realize the circuit. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material. When a semiconductor or insulator material is interposed between the electrodes, a crystal or an amorphous material of GeSx, GeSex, GeTex, or WOx (0<x<100) is preferably used as the semiconductor or insulator material.Type: GrantFiled: October 29, 2001Date of Patent: April 11, 2006Assignees: Japan Science and Technology Corporation, RikenInventors: Masakazu Aono, Tsuyoshi Hasegawa, Kazuya Terabe, Tomonobu Nakayama
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Publication number: 20050243844Abstract: There are provided a point contact array, in which a plurality of point contacts are arranged, each point contact electrically and reversibly controlling conductance between electrodes and being applicable to an arithmetic circuit, a logic circuit, and a memory device, a NOT circuit, and an electronic circuit using the same. A circuit includes a plurality of point contacts each composed of a first electrode made of a compound conductive material having ionic conductivity and electronic conductivity and a second electrode made of a conductive substance. The conductance of each point contact is controlled to realize the circuit. Ag2S, Ag2Se, Cu2S, or Cu2Se is preferably used as the compound conductive material. When a semiconductor or insulator material is interposed between the electrodes, a crystal or an amorphous material of GeSx, GeSex, GeTex, or WOx (0<x<100) is preferably used as the semiconductor or insulator material.Type: ApplicationFiled: June 24, 2005Publication date: November 3, 2005Applicants: Japan Science and Technology Corporation, RIKENInventors: Masakazu Aono, Tsuyoshi Hasegawa, Kazuya Terabe, Tomonobu Nakayama
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Patent number: 6891186Abstract: This invention provides a method for constructing bridge including fine wires or point contacts producing a quanitized inter-electrode conductance, and provides a method for easily controlling the conductance of this bridge. Further, it aims to provide an electronic element using conductance control due to the bridge, fine wire or point contact formed between the electrodes. These objects are accomplied with an electronic element comprising a first electrode comprising a mixed electroconducting material having ion conductance and electron conductance, and a second electrode comprising an electroconducting substance, wherein the inter-electric conductance can be controlled. In another aspect, this invention is an electronic element formed by a bridge between electrodes, by applying a voltage between the electrodes so that the second electrode is negative with respect to the first electrode and movable ions migrate from the first electrode to the second electrode.Type: GrantFiled: August 30, 2001Date of Patent: May 10, 2005Assignee: Japan Science and Technology CorporationInventors: Masakazu Aono, Kazuya Terabe, Tsuyoshi Hasegawa, Tomonobu Nakayama