Abstract: A semiconductor porcelain composition is prepared by separately preparing a composition of (BaR)TiO3 (R is La, Dy, Eu, Gd or Y) and a composition of (BiNa)TiO3, and calcining the composition of (BaR)TiO3 at a temperature of 900° C. through 1300° C. and calcining the composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing, forming and sintering the calcined powders. Similarly, a semiconductor porcelain composition is prepared by separately preparing a composition of (BaM)TiO3 (M is Nb, Ta or Sb) and a composition of (BiNa)TiO3, and calcining the composition of (BaM)TiO3 at a temperature of 900° C. through 1300° C. and calcining the composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing, forming and sintering the calcined powders.

Abstract: It is intended to provide a Pb-free semiconductor ceramic composition capable of shifting its Curie temperature toward a positive direction and capable of enhancing its jump characteristic while minimizing the increase in the resistivity at room temperature. There is provided a semiconductor ceramic composition in which a part of Ba of BaTiO3 is substituted with Bi—Na, the semiconductor ceramic composition being obtained by sintering a mixed calcined powder containing a calcined BT powder containing a calcined powder of (BaR)TiO3 or a calcined powder of Ba(TiM)O3 (in which R and M each are a semiconductor dopant), and a calcined BNT powder containing a calcined powder of (BiNa)TiO3; in which BaCO3 and/or TiO2 is/are added to the calcined BT powder or the calcined BNT powder or to the mixed calcined powder.

Abstract: It is intended to provide a semiconductor ceramic composition containing no Pb, which is capable of shifting the Curie temperate to a positive direction as well as of controlling room temperature resistivity and having an excellent jump characteristic. Since the semiconductor ceramic composition in which a portion of Ba of BaTiO3 is substituted by Bi—Na has a crystal in which a central part and an outer shell part of a crystal grain are different from each other in composition, the composition is capable of improving control of room temperature resistivity and a jump characteristic, and therefore it is optimum as a material for a PTC thermistor, a PTC heater, a PTC switch, a temperature detector, and the like.

Abstract: It is intended to provide a semiconductor ceramic composition in which a part of Ba in BaTiO3 is substituted with Bi—Na, which is capable of restraining the evaporation of Bi in the calcination step, is capable of restraining the compositional deviation of Bi—Na thereby suppressing the formation of different phases, is capable of further reducing the resistivity at room temperature, and is capable of restraining the fluctuation of the Curie temperature; and to provide a production process of the same.

Abstract: The invention intends to provide a dielectric porcelain composition for use in electronic devices, in which the relative dielectric constant ?r is high, the Qf value is high and, the temperature coefficient ?f can be controlled while maintaining the temperature coefficient ?f at the resonant frequency small and the Qf value high. According to the invention, when, in an LnAlO3—CaTiO3-based dielectric porcelain composition, a molar ratio of LnAlO3 and CaTiO3 is optimized and Al is substituted by a slight amount of Ga, a structure that has an LnAlO3—CaTiO3 solid solution as a main phase and a solid solution of Al—Ga-based oxide as a secondary phase and does not substantially contain ?-Al2O3 in the structure can be obtained, and the temperature coefficient ?f can be controlled while maintaining the temperature coefficient ?f at the resonant frequency small and the Qf value high.

Abstract: It is intended to provide a semiconductor ceramic composition capable of shifting the Curie temperature to a positive direction as well as of obtaining an excellent jump characteristic while suppressing an increase in room temperature resistivity to a minimum value. There is provided a semiconductor ceramic composition in which a portion of Ba of BaTiO3 is substituted by Bi—Na, the semiconductor ceramic composition being obtained by sintering a mixed calcined powder of a BT calcined powder containing (BaR)TiO3 or Ba(TiM)O3 (wherein each of R and M is a semiconductive dopant), wherein a part of BaCO3 and TiO2 are remained therein; and a BNT calcined powder containing a (BiNa)TiO3 powder.

Abstract: The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.

Abstract: The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.

Abstract: The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.

Abstract: The invention intends to provide a dielectric porcelain composition for use in electronic devices, in which the relative dielectric constant ?r is high, the Qf value is high and, the temperature coefficient ?f can be controlled while maintaining the temperature coefficient ?f at the resonant frequency small and the Qf value high. According to the invention, when, in an LnAlO3—CaTiO3-based dielectric porcelain composition, a molar ratio of LnAlO3 and CaTiO2 is optimized and Al is substituted by a slight amount of Ga, a structure that has an LnAlO3—CaTiO3 solid solution as a main phase and a solid solution of Al—Ga-based oxide as a secondary phase and does not substantially contain ?-Al2O3 in the structure can be obtained, and the temperature coefficient ?f can be controlled while maintaining the temperature coefficient ?f at the resonant frequency small and the Qf value high.

Abstract: A semiconductor porcelain composition [(BiNa)x(Ba1-yRy)1-x]TiO3 with 0<x?0.2, 0<y?0.02 and R being selected from the group consisting of La, Dy, Eu, Gd or Y is prepared by separately calcining a composition of (BaR)TiO3 at a temperature of 900° C. through 1300° C. and calcining a composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing the two calcined powders and forming and sintering the mixed calcined powder. Similarly, a semiconductor porcelain composition [(BiNa)x(Ba1-x][Ti1-zMz]O3 with 0<x?0.2, 0<z?0.005 and M being selected from the group consisting of Nb, Ta and Sb is prepared by separately calcining a composition of (BaM)TiO3 at a temperature of 900° C. through 1300° C. and calcining a composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing the two calcined powders, and forming and sintering the mixed calcined powders.

Abstract: A method of producing a semiconductor disk represented by a composition formula [(Bi0.5Na0.5)x(Ba1?yRy)1?x]TiO3, in which R is at least one element of La, Dy, Eu, Gd and Y and x and y each satisfy 0?x?0.14, and 0.002?y?0.02 includes carrying out a sintering in an inert gas atmosphere with an oxygen concentration of 9 ppm to 1% and wherein a treatment at an elevated temperature in an oxidizing atmosphere after the sintering is not carried out.

Abstract: A semiconductor porcelain composition is prepared by separately preparing a composition of (BaR)TiO3 (R is La, Dy, Eu, Gd or Y) and a composition of (BiNa)TiO3, and calcining the composition of (BaR)TiO3 at a temperature of 900° C. through 1300° C. and calcining the composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing, forming and sintering the calcined powders. Similarly, a semiconductor porcelain composition is prepared by separately preparing a composition of (BaM)TiO3 (M is Nb, Ta or Sb) and a composition of (BiNa)TiO3, and calcining the composition of (BaM)TiO3 at a temperature of 900° C. through 1300° C. and calcining the composition of (BiNa)TiO3 at a temperature of 700° C. through 950° C., and then mixing, forming and sintering the calcined powders.

Abstract: It is intended to provide a semiconductor ceramic composition in which a part of Ba in BaTiO3 is substituted with Bi—Na, which is capable of restraining the evaporation of Bi in the calcination step, is capable of restraining the compositional deviation of Bi—Na thereby suppressing the formation of different phases, is capable of further reducing the resistivity at room temperature, and is capable of restraining the fluctuation of the Curie temperature; and to provide a production process of the same.

Abstract: The invention intends to provide, in BaTiO3 semiconductor porcelain composition, a semiconductor porcelain composition that, without using Pb, can shift the Curie temperature to a positive direction and can significantly reduce the resistivity at room temperature. According to the invention, when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ba is further substituted by a specific amount of a Q element, or when Ba is partially substituted by an A1 element (at least one kind of Na, K and Li) and an A2 element (Bi) and Ti is partially substituted by a specific amount of an M element, the optimal valence control can be applied and whereby the resistivity at room temperature can be significantly reduced. Accordingly, it is optimal for applications in a PTC thermistor, a PTC heater, a PTC switch, a temperature detector and the like, and particularly preferably in an automobile heater.

Abstract: To provide a semiconductor ceramic composition containing no Pb in which a part of Ba in BaTiO3 is substituted with Bi—Na, which is capable of shifting the Curie temperate to a positive direction as well as of greatly lowering resistivity at room temperature, and a method for producing the same. BaTiO3 calcined powder and (BiNa)TiO3 calcined powder, which contain no semiconductive dopant, are prepared separately, the calcined powders are mixed, crushed, formed, and then sintered in an inert gas atmosphere having an oxygen concentration of 1% or less to obtain a semiconductor ceramic composition represented by a composition formula: [(BiNa)xBa1-x]TiO3 in which x satisfies 0<x?0.3.

Abstract: It is intended to provide a semiconductor ceramic composition capable of shifting the Curie temperature to a positive direction as well as of obtaining an excellent jump characteristic while suppressing an increase in room temperature resistivity to a minimum value. There is provided a semiconductor ceramic composition in which a portion of Ba of BaTiO3 is substituted by Bi—Na, the semiconductor ceramic composition being obtained by sintering a mixed calcined powder of a BT calcined powder containing (BaR)TiO3 or Ba(TiM)O3 (wherein each of R and M is a semiconductive dopant), wherein a part of BaCO3 and TiO2 are remained therein, and a BNT calcined powder containing a (BiNa)TiO3 powder.

Abstract: It is intended to provide a semiconductor ceramic composition containing no Pb, which is capable of shifting the Curie temperate to a positive direction as well as of controlling room temperature resistivity and having an excellent jump characteristic. Since the semiconductor ceramic composition in which a portion of Ba of BaTiO3 is substituted by Bi—Na has a crystal in which a central part and an outer shell part of a crystal grain are different from each other in composition, the composition is capable of improving control of room temperature resistivity and a jump characteristic, and therefore it is optimum as a material for a PTC thermistor, a PTC heater, a PTC switch, a temperature detector, and the like.

Abstract: Problem: To provide a production method of providing a semiconductor porcelain composition which is capable of shifting a Curie temperature in a positive direction with using Pb and has a considerably reduced resistivity at room temperature, and a method of producing a semiconductor porcelain composition which is capable of providing a property uniform to an inner portion of a material even in a material having a comparatively large and thick shape. Means for Resolution: A method of producing a semiconductor porcelain composition represented by a composition formula [(Bi0.5Na0.5)x(Ba1-yRy)1-x]TiO3, in which R is at least one element of La, Dy, Eu, Gd and Y and x and y each satisfy 0<x?0.14, and 0.002?y?0.02, the method including carrying out a sintering in an inert gas atmosphere with an oxygen concentration equal to or smaller than 1%.

Abstract: To provide a semiconductor porcelain composition in which a portion of Ba of BaTiO3 is substituted by Bi-Na, which is capable of inhibiting evaporation of Bi in a calcining step, inhibiting the formation of secondary phases by preventing a compositional shift of Bi-Na, further reducing a resistivity at room temperature, and inhibiting a scattering in a Curie temperature, and a method of producing the same.