Abstract: A gas cooler includes a drain recovery part, a drain discharge flow path, a drain tank, and a ventilation flow path. In the drain recovery part, drain separated from gas is accumulated by cooling the gas in a cooling part. The drain tank includes a separation part in which the drain and the gas are separated, and a storage part in which the separated drain is stored. The drain discharge flow path has one end communicating with the drain recovery part and the other end communicating with the separation part. The ventilation flow path has one end communicating with the separation part, and the other end communicating with a gas flow path that leads to a downstream space above the drain recovery part and to a gas lead-out port.

Abstract: To provide a semiconductor device having an improved quality. The semiconductor device of the invention has a tape substrate having a semiconductor chip thereon, a plurality of land pads placed around the semiconductor chip, a plurality of wires for electrically coupling the electrode pad of the semiconductor chip to the land pad, and a plurality of terminal portions provided on the lower surface of the tape substrate. An average distance between local peaks of the surface roughness of a first region between the land pad of the tape substrate and the semiconductor chip is smaller than an average distance of local peaks of the surface roughness of a second region between the land pad of the tape substrate and the first region.

Abstract: To provide a semiconductor device having an improved quality. The semiconductor device of the invention has a tape substrate having a semiconductor chip thereon, a plurality of land pads placed around the semiconductor chip, a plurality of wires for electrically coupling the electrode pad of the semiconductor chip to the land pad, and a plurality of terminal portions provided on the lower surface of the tape substrate. An average distance between local peaks of the surface roughness of a first region between the land pad of the tape substrate and the semiconductor chip is smaller than an average distance of local peaks of the surface roughness of a second region between the land pad of the tape substrate and the first region.