Abstract: Provided is an analysis device capable of analyzing a wide range of ion concentrations. The analysis device includes: an ion separating unit selectively conducting a specific kind of ions from among a plurality of kinds of ions flowing through a flow path; a detection electrode provided in the flow path and disposed toward an outlet with respect to the ionization unit; and a deflection electrode positioned across the flow path from the detection electrode, and generating an electric field that moves the specific kind of ions toward the detection electrode. The deflection electrode is capable of adjusting a width of a region in which the electric field is generated in a width direction perpendicular to a direction in which the flow path extends.

Abstract: An electrowetting device includes a first substrate, a plurality of first electrodes formed on the first substrate, a dielectric layer formed on the plurality of first electrodes, a first water-repellent layer formed on the dielectric layer, a second substrate, a second electrode formed on the second substrate, and a second water-repellent layer formed on the second electrode. The first substrate and the second substrate are arranged with a gap between the first water-repellent layer and the second water-repellent layer. The first electrode includes an indium oxide-zinc oxide layer, the dielectric layer includes a silicon nitride layer, and the silicon nitride layer is formed directly on the indium oxide-zinc oxide layer.

Abstract: This electron emitting element includes a lower electrode, a surface electrode facing the lower electrode, a resistance layer arranged between the lower electrode and the surface electrode, and an insulating layer arranged between the lower electrode and the surface electrode. The resistance layer is an insulating resin layer containing conductive fine particles in a dispersed state. The insulating layer has a peripheral region for defining the electron emission region, and an emission control region which is arranged so as to overlap the electron emission region defined by the peripheral region. The emission control region is configured by a line-shaped insulating layer, a plurality of dot-shaped insulating layers, or both a line-shaped insulating layer and a plurality of dot-shaped insulating layers. The percentage of an area that the emission control region represents within an area of an electron emission region defined by the peripheral region is 2% or more and 60% or less.

Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction.

Abstract: Provided are an active matrix substrate having a reduced driving voltage and excellent adhesion between a dielectric layer and a water-repellent layer and a microfluidic device including the substrate. The active matrix substrate includes an array electrode, a dielectric layer covering the array electrode, and a first water-repellent layer in this order on a first substrate. The dielectric layer includes a silicon nitride film located on the side in contact with the first water-repellent layer, and the silicon nitride film has a surface layer region containing oxygen in the surface on the side in contact with the first water-repellent layer.

Abstract: An X-ray generation device includes a cathode including an electron source generating an electron beam, an anode including a target to transmit an X-ray generated by collision of the electron beam, and a convergence electrode converging the electron beam toward the target. The target has a first region having a locally small thickness and a second region having a larger thickness than the first region. The X-ray generation device further includes a deflection unit to switch an incident position of the electron beam between the first region and the second region. The deflection unit has an adjustment mode to adjust an X-ray focal spot diameter and an X-ray generation mode to generate an X-ray, the electron beam is caused to enter the first region in the adjustment mode, and the electron beam is caused to enter the second region in the X-ray generation mode.

Abstract: This electron emitting element includes a lower electrode, a surface electrode facing the lower electrode, a resistance layer arranged between the lower electrode and the surface electrode, and an insulating layer arranged between the lower electrode and the surface electrode. The resistance layer is an insulating resin layer containing conductive fine particles in a dispersed state. The insulating layer has a peripheral region for defining the electron emission region, and an emission control region which is arranged so as to overlap the electron emission region defined by the peripheral region. The emission control region is configured by a line-shaped insulating layer, a plurality of dot-shaped insulating layers, or both a line-shaped insulating layer and a plurality of dot-shaped insulating layers. The percentage of an area that the emission control region represents within an area of an electron emission region defined by the peripheral region is 2% or more and 60% or less.

Abstract: Provided is a photoelectric conversion device capable of suppressing diffusion of a dopant in a p layer or n layer into an adjacent layer. A photoelectric conversion device is provided with a silicon substrate, a substantially intrinsic amorphous layer formed on one surface of the silicon substrate, and a first conductive amorphous layer that is formed on the intrinsic amorphous layer. The first conductive amorphous layer includes a first concentration layer and a second concentration layer that is stacked on the first concentration layer. The dopant concentration of the second concentration layer is 8×1017 cm?3 or more, and is lower than the dopant concentration of the first concentration layer.

Abstract: An active matrix substrate includes: a first substrate; and first electrodes, a dielectric layer covering the first electrodes, and a first water-repelling layer in this sequence on the first substrate, wherein the dielectric layer has a multilayer structure including two or more layers and includes a silicon nitride film and a metal-oxide film between the silicon nitride film and the first water-repelling layer, and the silicon nitride film has an oxygen-containing surface layer region on a surface thereof that is in contact with the metal-oxide film.

Abstract: An electron emission element of the present invention includes a lower electrode, a surface electrode, and a silicone resin layer disposed between the lower electrode and the surface electrode, wherein the surface electrode includes a silver layer, and the silver layer is in contact with the silicone resin layer.

Abstract: The present disclosure provides a reliable X-ray generating tube that forms a focus with a stable size and shape. The X-ray generating tube includes an electron gun including an electron emitting portion, a plurality of grid electrodes, and an insulating support member that supports the plurality of grid electrodes. The electron gun includes a conductive section that hides the insulating support member to prevent the insulating support member from being directly viewed from an electron through path of electrons emitted from the electron emitting portion and passing through the grid electrodes.

Abstract: An X-ray generation device includes a cathode including an electron source generating an electron beam, an anode including a target to transmit an X-ray generated by collision of the electron beam, and a convergence electrode converging the electron beam toward the target. The target has a first region having a locally small thickness and a second region having a larger thickness than the first region. The X-ray generation device further includes a deflection unit to switch an incident position of the electron beam between the first region and the second region. The deflection unit has an adjustment mode to adjust an X-ray focal spot diameter and an X-ray generation mode to generate an X-ray, the electron beam is caused to enter the first region in the adjustment mode, and the electron beam is caused to enter the second region in the X-ray generation mode.

Abstract: An electron emission element of the present invention includes a lower electrode, a surface electrode, and a silicone resin layer disposed between the lower electrode and the surface electrode, wherein the surface electrode includes a silver layer, and the silver layer is in contact with the silicone resin layer.

Abstract: Provided are an active matrix substrate having a reduced driving voltage and excellent adhesion between a dielectric layer and a water-repellent layer and a microfluidic device including the substrate. The active matrix substrate includes an array electrode, a dielectric layer covering the array electrode, and a first water-repellent layer in this order on a first substrate. The dielectric layer includes a silicon nitride film located on the side in contact with the first water-repellent layer, and the silicon nitride film has a surface layer region containing oxygen in the surface on the side in contact with the first water-repellent layer.

Abstract: An electron gun includes a cathode including an electron emitting portion, an extraction electrode for extracting electrons emitted from the electron emitting portion, and a focusing electrode for focusing the electrons extracted by the extraction electrode. The focusing electrode includes an outside electrode having a tubular shape, and an inside electrode arranged inside the outside electrode. The inside electrode defines a first space having a columnar shape, and includes a first surface on a side of the cathode, and a second surface on an opposite side of the first surface. An inside surface of the outside electrode and the second surface of the inside electrode define a second space. The inside electrode includes an electron passage hole, and a communicating portion which makes the first space and the second space communicate with each other.

Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction.

Abstract: A photovoltaic device includes: a semiconductor substrate stretching in a first direction and a second direction that intersects the first direction; and a first amorphous semiconductor film and a second amorphous semiconductor film both provided on the semiconductor substrate. The second amorphous semiconductor film has a differ conductivity type from the first amorphous semiconductor film. The first amorphous semiconductor film and the second amorphous semiconductor film are divided into a plurality of sections in the first direction and the second direction. Therefore, the photovoltaic device has an improved heat resistance.

Abstract: X-ray generation tube includes electron gun, and anode having target to generate X-rays upon collision with electrons from the electron gun. The electron gun includes cathode having electron emitting portion, extraction electrode to extract the electrons from the electron emitting portion, and focusing electrode to focus the extracted electrons. The focusing electrode includes first portion having tubular shape, and second portion arranged inside the first portion. The first portion includes distal end facing the anode, the second portion includes opposing surface facing the anode, and the opposing surface includes electron passage hole through which the electrons from the electron emitting portion pass. Distance between the distal end and the anode is shorter than that between the opposing surface and the anode. Thermal conductivity of the distal end is lower than that of the second portion.

Abstract: An active matrix substrate includes: a first substrate; and first electrodes, a dielectric layer covering the first electrodes, and a first water-repelling layer in this sequence on the first substrate, wherein the dielectric layer has a multilayer structure including two or more layers and includes a silicon nitride film and a metal-oxide film between the silicon nitride film and the first water-repelling layer, and the silicon nitride film has an oxygen-containing surface layer region on a surface thereof that is in contact with the metal-oxide film.

Abstract: An electron gun includes a cathode including an electron emitting portion, an extraction electrode for extracting electrons emitted from the electron emitting portion, and a focusing electrode for focusing the electrons extracted by the extraction electrode. The focusing electrode includes an outside electrode having a tubular shape, and an inside electrode arranged inside the outside electrode. The inside electrode defines a first space having a columnar shape, and includes a first surface on a side of the cathode, and a second surface on an opposite side of the first surface. An inside surface of the outside electrode and the second surface of the inside electrode define a second space. The inside electrode includes an electron passage hole, and a communicating portion which makes the first space and the second space communicate with each other.